• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• 한국세라믹학회지
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• 제33권4호
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• pp.418-424
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• 1996

(Ti.W)C complex carbide was synthesized by self-propagating high temperature synthesis (SHS) chemical furnace. Attempt to find the optimal condition for synthesis of (Ti.W)C the effects of molar ratio of Ti:W:C on the synthesized powders and mechanical properties were investigated, Optimum molar ratio of these synthe-sized powder was Ti:W:C=0.7:0.2:1.0 The bulk density M,O.R Hardness Fracture toughness of (Ti.W)C complex carbide sintered at 200$0^{\circ}C$ for 60 min by hot-pressing under the pressure of 20 MPa were 7.6g/cm3, 475 MPa, 17,.7 GPa respectively.

• 한국세라믹학회지
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• 제31권1호
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• pp.25-30
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• 1994

W-Ti-C-N based multiphase hard materials have been prepared from WC/TiN powder mixture. By sintering at and above 190$0^{\circ}C$, the two phases of powder mixture has transformed into intermixed W, W2C and Ti(C, N) phases. For the temperature range between 180$0^{\circ}C$ and 210$0^{\circ}C$, the sintered or hot pressed samples show maximum density and hardness. The seems that metallic W grains enhance the fracture toughness of materials. The wear resistance of the material is found to increase with increasing hardness.

• 한국분말재료학회지
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• 제14권3호
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• pp.208-214
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• 2007

The microstructure and hardness of (W,Ti)C cemented carbides with a different metallic binder composition of Ni and Co fabricated by powder technology were investigated. The densifications of the prepared materials were accomplished by using vacuum sintering at $1450^{\circ}C$. Nearly full dense (W,Ti)C cemented carbides were obtained with a relative density of up to 99.7% with 30 wt.% Co and 99.9% with 30 wt.% Ni as a metallic binder. The average grain size of the (W,Ti)C-Co and the (W,Ti)C-Ni was decreased by increasing the metallic binder content. The hardness of the dense (W,Ti)C-15 wt%Co and (W,Ti)C-15 wt%Ni, was greater than that of the other related cemented carbides; in addition, the cobalt-based cemented carbides had greater hardness values than the nickel-based cemented carbides.

• 분석과학
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• 제15권1호
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• pp.15-19
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• 2002

텅스텐이 첨가된 $BaTiO_x$계 세라믹재료 중 Ba, Ti 및 W의 회수율을 증가시키기 위하여 가압 산 분해법을 이용하여 전처리하였다. $BaTiO_x$계 세라믹재료 시료를 가압 산 부내장치 내에서 HF : HCI ( 1 : 2 ) 혼합산을 가하여 $220^{\circ}C$에서 3시간동안 분해시킨 후 ICP-AES를 이용하여 Ba, Ti 및 W을 정량하였다. 그 결과 Ba는 99.6% Ti는 99.8% W는 99.2%의 회수율과 Ba는 1.02% Ti는 0.73% W는 1.79%의 C.V.값을 각각 얻었다. 이 전처리 방법을 실제시료에 적용하여 25.9% Ba38.8% Ti과 3.31% W 함량을 각각 구할수 있었다.

• 센서학회지
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• 제14권2호
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• 한국결정성장학회지
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• 제11권4호
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• pp.133-137
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• 2001

고출력 이산화탄소 레이저빔에 의한 TiC/Al 표면합금의 특성을 연구하였다. 이 과정을 분석하기 위해 기본금속[Al]과 TiC 분말입자 사이의 물리적 특성을 측정하였다. 표면층의 크기와 모양, 광학적 흡수율 그리고 분말효율을 TiC/Al 행력에서 레이저출력의 함수로 측정하였다. TiC 분말을 사용한 경우와 사용하지 않은 경우의 기본금속내의 흡수율은 레이저 출력이 증하가면 감소하였다. 레이저출력이 2kW에서 4.5kW 범위로 증가되면 분말효율은 4%에서 12%까지 증가하였다. 그러나 TiC 분말입자는 용융된 알루미늄에는 용해되지 않는다. 이 결과 분말입자가 증가되면 쉽게 표면층을 투과하여 금속행렬속에 2개의 위상상태로 생성된다.

• 전자공학회논문지A
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• 제33A권3호
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.