• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.438-445
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• 2002

In this study, the glass frit of $PbO-TiO-2-SiO_2-BaO-ZnO-Al_2O-3-CaO-B_2O_3-Bi_2O_3-MgO$ system was manufactured. The glass was melted at $1,400{\circ}C$, quenched and attrition-milled. The glass frit powder was pressed and fired for 2h at the range of $750~1,000{\circ}C$. The crystallization of glass frit began at about $750{\circ}$ and at low temperature, the main crystal phases were hexagonal celsian($BaAl_2Si_2O_8$) and alumina. As the firing temperature increased, the crystal phases of monoclinic celsian, zinc aluminate, zinc silicate, calcium titanium silicate and titania appeared. And the increase of firing temperature led to transformation of hexagonal celsian to monoclinic. The only glass frit containing 15wt% PbO had the crystal phase of solid solution of $PbTiO_3-CaTiO_3$. At the frequency of 1 MHz, the dielectric constant of glass frit crystallized was in the range of 11~16 and the dielectric loss less than 0.020. But the glass frit containing 15wt% PbO had the dielectric constant of 17~26 and loss of 0.010~0.015 because of crystal phase of solid solution of $PbTiO_3-CaTiO_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.193-195
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• 2005

[ $0.96[Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}TiO_3]+0.04SrTiO_3+0.3wt%Nb_2O_5+0.2wt%La_2O_3+xwt%ZnO$ ], were studied in order to develope the superior piezoelectric properties of Lead-free piezoelectric ceramics. With increasing amount of ZnO addition, density showed the maximum value of 5.79(g/$cm^3$) at 0wt% ZnO addition, and electromechanical coupling factor($k_p$) and dielectric constant decreased, and mechanical quality factor($Q_m$) increased and showed the maximum value of 280 at 0.4wt% ZnO addition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.76-76
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• 2009

PZT세라믹스는 높은 압전특성과 우수한 큐리온도($400^{\circ}C$)를 보유하고 있어 오래시간에 걸쳐 주목받고 있다. 현재 압전변압기, 액츄에이터, 센서등의 압전소자는 PZT를 이용하여 제작하고 있지만 PZT는 고온 소결시 PbO의 휘발이 환경오염을 초래하며 인체의 유해하다는 연구결과가 나왔다. 이에 최근에는 PbO가 포함 되지않은 무연(lead-free)계 압전세라믹스가 주목받고 있다. 무연 압전 세라믹스의 종류로는 Bi-layer-structured ceramics, Bi-perovskite type ceramics, NKN base ceramics 가 존재하고 있다. 그 중 $(Na_{0.5}K_{0.5})NbO_3(NKN)$ 세라믹스는 높은 큐리온도와($400^{\circ}C$)와 높은 전기기계 결합계수(약 36%)를 보유하고 있어 많은 연구가 이루어 지고 있다. 하지만 NKN은 PZT에 비하여 치밀성이 낮으며 일반적인 산화물 소결방법으로는 밀도를 높이기가 어려운 단점이 존재한다. 이를 개선하기 위한 방법으로 hot pressing와 spak plasma sintering, RTGG와 같은 방법으로 밀도를 높일수 있지만 비용이 많이 들어 일반적으로 사용이 어렵다. 다른 방법으로 NKN에 첨가물을 넣는 방법을 사용하고 있는데 방법으로 $LiNbO_3$, $LiTiO_3$, $LiSbO_5$를 첨가하여 개선하는 방법이 있다. 본 실험은 첨가물을 넣는 방식으로 비화학양론적 $(Na_{0.5}K_{0.5})_{0.97}(Nb_{0.9}Ta_{0.1})O_3(NKNT)$조성에 CuO를 mol%로 변화주어 유전 및 압전 특성을 조사하였다.

• Korean Journal of Materials Research
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• v.16 no.11
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• pp.705-709
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• 2006

Nb was doped to Pb-free $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) by a solid state mixing process to form $(Bi_{0.5}Na_{0.5})Ti_{1-x}Nb_xO_3\;(x=0{\sim}0.05)$ (BNTNb) and its doping effects on ferroelectric and piezoelctric properties of BNT were investigated. The BNTNb solid solutions were formed up to x=0.01 with no apparent second phases while grain sizes decreased. As x increased, coercive field ($E_c$) and mechanical quality factor ($Q_m$) decreased but piezoelectric constant ($d_{33}$) increased, which indicates Nb acts as a donor for BNT.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.234-238
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• 1987

In this paper, the used specimen composition was added basic additives ($Bi_2O_3\;lmol%$, $Sb_2O_3\;lmol%$, CoO 0.5 mol%, MnO 0.5mol%) to ZnO powder, and $TiO_2$ (1,2,3,4 mol%) to the above basic composition. It appears that there are four regions of conduction current depended upon the strength of the applied electric field ; Ohimic region, Poole-Frenkel region, Schottky region and Tunneling region. Increasing of $TiO_2mol%$, the breakdown voltages of ZnO ceramic varistors are decreased. The decrease of breakdown voltages was explained with the decrease of potential barrier height. Moreover, V-I characteristics with temperature dependence are decreased with increasing of $TiO_2mol%$.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.47 no.3
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• pp.86-94
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• 2024

In this study, an attempt was made to approximate the main characteristic values of Bi_0.5(Na_0.78K_0.22)_0.5TiO₃ (= BNKT) depending on the content of Fe₂O₃ additives, aiming to approach the values of lead(Pb) piezoelectric ceramic materials (PZT). Specifically, when the piezoelectric coefficient (d₃₃) value of lead(Pb) piezoelectric ceramic material (PZT polycrystalline ceramic powder) is 300[pC/N] or higher, it is applied for hard purposes such as ultrasonic welding machines and cleaning machines, and when it exceeds 330[pC/N], it is applied for soft purposes like piezoelectric sensors. In this study, research and development were conducted for devices with a piezoelectric coefficient (d₃₃) of 300[pC/N] or more for actuators. For this purpose, K⁺ exceeding 0.02 to 0.12 mol% was added to (Na_0.78K_0.22)_0.5Bi_0.5TiO₃ to analyze structural changes due to K⁺ excess, and (Na_0.78K_0.22)_0.5Bi_0.5TiO₃ + 8mol% K₂CO₃ Ti⁴⁺ was substituted with Fe³⁺ to manufacture lead-free piezoelectric materials. As a result, ceramics with Fe³⁺ substitution at x = 0.0075 yielded an average value of d₃₃ = 315[pC/N]. Furthermore, for ceramics with Fe³⁺ substitution at x = 0.0075, the average values of maximum polarization (P_max), residual polarization (P_rem), and coercive field (E_c) were found to be 39.63 μC/cm², 30.45 μC/cm², and 2.50 kV/mm, respectively. The reliable characteristic values obtained from the research results can be applied to linear actuator components (such as the zoom function of mobile cameras, LDM for skin care, etc.) and ultrasonic vibration components.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.553-561
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• 1993

In this study, thr effect of $Bi_2O_3$ and BN addition as grain boundary modifiers on sintering and electrical properties of semiconducting PTCR(Positive Temperature Coefficient of Resistivity) mate rial were analyzed using TMA, XRD and Complex Impedance Spectroscopy method. Bismut.h Ox~de and Boron Nitride were added to Y-doped $BaTiO_3$ respectively. Bismuth sesquioxide up to O.lmol%solubil~ ty limit of $Bi_2O_3$ in Y--$BaTiO_3$ ceramics-retarded densification and grain growth, and further addition mitigated these retardation effects. The resistivity at room temperature increased with increasing amount of $Bi_2O_3$ and thus decreased the PTCR effect, probably due to the $Bi_2O_3$ segregation on the grain boundaries. From the complex ~mpedance pattern, it is known that the grain boundary resisitivity is dominant on the whole resistivity of sample. In the result of applying the defect chemistry, $Bi^{3+} \;and \; Bi^[5+}$ are substituted for Ua and Ti site, respectively. Boron nitride decomposed and formed liquid phase among the $BaTiO_3$ grains. The decomposed com~ ponents made the second phase and existed the tr~ple juntion from the result of EPMA. From the complex impendencc pattern, the gram and grain boundary resistivity were small. The grain size increased with increasing BN contents, and decreased grain boundary resistivity enhanced the PTCR effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.160-165
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• 2015

Lead-free piezoelectric materials have been actively studied to substitute for conventional PZT based solid solution, $Pb(Zr_xTi_{1-x}O_3)$, which occurs unavoidable PbO during the sintering process. Among them, Bismuth Sodium Titanate, $Na_{0.5}Bi_{0.5}TiO_3$ (abbreviated as NBT) based solid solution is attracted for the one of excellent candidates which shows the strong ferroelectricity, Curie temperature (Tc), remnant polarization (Pr) and coercive field (Ec). Especially, the solid solution of rhombohedral phase NBT with tetragonal perovskite phase has a rhombohedral - tetragonal morphotropic phase boundary. Modified NBT with tetragonal perovskite at the region of MPB can be applied for high frequency ultrasonic application because of not only its low permittivity, high electrocoupling factor and high mechanical strength, but also effective piezoelectric activity by poling. In this study, solid state ceramic processing of NBT and modified NBT, $(Na_{0.5}Bi_{0.5})_{0.93}Ba_{0.7}TiO_3$ (abbreviated as NBT-7BT), at the region of MPB using 7 % $BaTiO_3$ as a tetragonal perovskite was introduced and the structure between NBT and NBT-7BT were analyzed using rietveld refinement. Also, the ferroelectric and piezoelectric properties of NBT-7BT such as permittivity, piezoelectric constant, polarization hysteresis and strain hysteresis loop were compared with those of pure NBT.

• Journal of the Korean Ceramic Society
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• v.42 no.3 s.274
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• pp.150-154
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• 2005

Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.