• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.172-173
• /
• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.73-74
• /
• 2006

Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

• 자원환경지질
• /
• 제12권2호
• /
• pp.79-93
• /
• 1979

한반도 내에 부존되고 있는 중적광상들은 세 주요한 Metallousenetic Epoch (Pre-Cambrian E., Jurassic-early Cretaceous E., 및 late Cretaceous-early Tertiary E.)에 생성되었고 성인으로 열수작용과 접촉교대작용에 기인된다고 보고되었다. 이중 12개 광상(달성, 산내, 일광, 상동, 대화, 월악, 복수, 옥방, 쌍전, 홍성, 삼봉, 청양)을 본 연구의 대상으로 택하고 각 지역에서 채취한 표품중 모두 25개 시료에 대하여 지화학적 실험을 수행하였다. 즉 각 분쇄된 시료 (-80+120mesh)는 super panner, 중액, isodynamic separator, UV lamp를 이용한 물리적인 처리과정을 거쳐 최종으로 입체현미경 하에서 단체분리된 후 Jarrell-Ash 1.5m Grating Spectrometer를 이용하여 본 연구대상 시료로 개발한 Spectrochemical method (Carrier: NaCl, Internal standard: $La_2O_3$)로 정량 분석되었다. 본 연구에서 밝혀낸 국내 회중석 광내에 함유되는 희유 윈소의 종류는 모두 Al, Bi, Fe, Si, Mn, Pb, Mg, Sn, Mo, Cu, Sr, Cr, Y, Ag, Ti, Ni, As, Yb의 18개 원소이며, 이들은 각각의 절대적 및 상대적인 함량과 각 광화작용의 시기, 광상의 성인, 모암, 각 원소의 mobility 그리고 회중석광의 형광색 및 육안색과 비교 검토되었다. 본 연구의 결과로 회중석광이 정출되는 과정에서 유사한 지질환경의 물리화학적인 여건이 이루어지면 그 내에 함유되는 몇 성분원소들의 화학적인 특성은 매우 유사성을 보여주는 typochemical habit를 가짐을 알 수 있었다. 본 연구에서 밝혀진 한국산 회중석 광내의 희유성분(稀有成分)으로서 Y, Mn, Sr 원소들의 Geochemical mobility의 특성(特性)은 앞으로 회중석광의 심도탐광을 위하여 고려되어야하고, 더욱 연구개발되어야 할 것이다. 또한 상기 회중석 광내의 물리적 및 화학적으로 결합되어 있는 불순물의 희유성분들은 선광 제련 파정에서 금속성분의 추출농집공정(工程)에 유용한 자료가 될 것이다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.236-236
• /
• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].