• 한국결정성장학회지
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• 제23권1호
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• pp.14-19
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• 2013

본 연구팀에서는 층상형 페로브스카이트 구조를 갖는 Ruddlesden-Popper 구조의 $K_2La_2Ti_3O_{10}$의 박리화를 통해 Aurivillius 구조의 $Bi_{4-x}La_xTi_3O_{12}$(x~2) 페로브스카이트 산화물을 성공적으로 합성하였다. 박리화된 란타늄 티타네이트 나노시트는 BiOCl 나노결정구조와 반응시켜 $Bi_{4-x}La_xTi_3O_{12}$(x~2) 결정을 얻어내었다. 박리화된 나노시트 현탁액은 $K_2La_2Ti_3O_{10}$으로부터 수소화된 $H_2La_2Ti_3O_{10}$의 층간에 에틸아민을 삽입시킴으로써 얻어내었다. 투과전자현미경(TEM) 분석을 통해, 란타늄 티타네이트가 에틸아민에 의해 박리화된 것을 확인할 수 있었다. X-선 회절분석(XRD)을 통해, 박리화된 란타늄 티타네이트와 BiOCl의 재적층과정을 거쳐 $700^{\circ}C$ 이상의 열처리 조건에서 $Bi_{4-x}La_xTi_3O_{12}$(x~2)로 형성된 것을 확인할 수 있었다.

• 한국결정학회지
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• 제5권2호
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• pp.85-92
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• 1994

펄스 레이저 증착법을 이용하여 강유전체 Bi4T13012 박막을 laA109(001) 위에 성장시켰다. 넓은 영역의 온도에서 증착한 박막의 상 형성과 구조적 성질을 X선 회절법을 이용하여 조사하였다. 740℃에서 증착한 박막은 박막의 c-축이 기판에 수직한 형태의 에피 성장의 경향을 보인다. 펄스 레이저 증착법을 이용하여 Bi4Ti3O12/YBa2Cu3O7-x/LaAlO3 복합구조를 in-situ 성장시켰다. Yba2Cu3O7-x의 a-, b-축이 LaAlO3와 완벽하게 평행하게 배열되어 있지 않음에도 불구하고, Bi4Ti3012 박막은 에피 성장의 경향을 보인다.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.101-101
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• 2002

• 한국재료학회지
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• 제12권11호
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.463-466
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• 2001

In recent year, Ferroelectric $BLT(Bi_{4-x}La_{x}Ti_{3}O_{12})$ is a promising candidate materials. This study was practiced to make good conditions of BL T targets. In this study, calcination and sintering temperature were kept at $750^{\circ}C$, $1100^{\circ}C$ for 2 hour respectively. the density obtained 7.612, 7.98, $7.877g/cm^{3}$ as $La_{2}O_{3}$ contents were 0.0mol%, 0.25mol%, 0.5mol%. Especially, the lanthanum content of 0.5 mol% measured C-axis (117) preferred orientation more than the others targets in the XRD. In $\varepsilon_{r}-f$ relationship using by HP 4194 A impedance analyzer, the 0.5 mol% observed above 200 relative dielectric constant. but the dissipation factor was higher than others targets at 100Hz~13MHz range. SEM photograph with the content of $La_{2}O_{3}$ was observed like rod and plate types.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.463-466
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• 2001

In recent year, Ferroelectric BLT($Bi_{4-x}$La$_{x}$Ti$_3$O$_{12}$) is a promising candidate materials. This study was Practiced to make good conditions of BLT targets. In this study, calcination and sintering temperature were kept at 75$0^{\circ}C$, 110$0^{\circ}C$ for 2 hour respectively. the density obtained 7.612, 7.98, 7.877 g/㎤ as La$_2$O$_3$ contents were 0.0mol%, 0.25mo1%, 0.5mol%. Especially, the lanthanum content of 0.5 mol% measured C-axis (117) preferred orientation more than the others targets in the XRD. In $\varepsilon$$_{r}$-f relationship using by HP 4194 A impedance analyzer, the 0.5 mol% observed above 200 relative dielectric constant. but the dissipation factor was higher than others targets at 100Hz~13MHz range. SEM photograph with the content of La$_2$O$_3$ was observed like rod and plate types.types.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 춘계학술발표강연 및 논문개요집
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• pp.97-97
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.150-150
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• 2001