• 제목/요약/키워드: (Ba, Sr)$TiO_3$

검색결과 494건 처리시간 0.03초

Ar/$CF_4$ 고밀도 플라즈마에서(Ba,Sr)$TiO_3$ 박막의 식각 메카니즘에 관한 연구 (A Study on Etching Mechanism of (Ba,Sr)$TiO_3$ in Ar/$CF_4$ High Density Plasma)

  • 김승범;김창일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1550-1552
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    • 1999

  • In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

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