• Journal of the Korean institute of surface engineering
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• v.22 no.4
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• pp.207-214
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• 1989

The surface morphology and the proferred orientation of the Pb-Sn alloy electrodeposite were investated by the change of electrolysis conditions in pulse current electroplating. The preferred orientation of Pb-phase in alloy deposits was changed in the sequence of (110)longrightarrow(100)or(100)+(111)longrightarrow(111) with increasing peak current density, while that of $\beta$-Sn phase changed from (321)+(301)to(301)+(111) mixed orientation. The surface morphology was closely related to the preferred orientation of alloy electrodeposits. The alloy deposits, which had (100)or(111) for pb-phase and (321)or(100)(301)for $\beta$-Sn sespectively, showed the surface structure of granular crystallites. The alloy deposits whih mixed orientations for both phases had microstructure of closely the closely stacked crysrallites, which was inclined to the surface.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.237-241
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• 1998

The growth orientation and the surface roughness of AIN/Si(111) films grown by radio frequency (RF) reactive magnetron sputtering were investigated using in-situ x-ray scattering technique and atomic force microscopy (AFM). AIN films were initially grown with the <001> preferred growth orientation under most growth conditions. As the film gets thicker, however, the growth orientation changes significantly, especially at high substrate temperature and high RF powers. We attribute the observed behavior to the competition between the surface energy that prefers the <001> growth orientation and the strain energy that randomizes the growth orientation. In addition, we investigated the evolution of the surface morphology during the growth using the x-ray reflectivity measurement.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1103-1110
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• 1995

Silicon carbide (SiC) films have been deposited on the isotropic graphite by chemical vapor deposition. Change of deposition parameters affected significantly the microstructure and preferred orientation of SiC films. Preferred orientation of SiC films was (111) or (220), and microstructure showed the startified structure consisting of small crystallite or faceted columnar structure depending on the deposition parameters. For microhardness, (111) oriented film and stratified structure were superior to (220) oriented film and faceted columnar structure, respectively. Surface of (111) oriented films was less rough than that of (220) oriented films. Adhesion force between graphite substrate and SiC films was above 100N for crystalline films and 49N for amorphous film.

• Journal of Welding and Joining
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• v.34 no.5
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• pp.77-82
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• 2016

In this study, Microstructure and hardness of 1st layer with crystallographic orientation were investigated about solidification structure in multipass weld using high Mn-Ni flux cored wire. Microstructure of solidification consisted of austenite matrix and a little ${\varepsilon}-phase$ in grain boundaries. Orientation of grains was usually (001), (101), (111). According to crystallographic orientation, morphology of primary dendrite was different. The depletion of Fe and the segregation of Mn, C, Ni, Si, Cu, Cr, O were found along the grain boundaries. The area of segregation was wide with an order of (001), (101), (111) grains. And hardness of grains with crystallographic orientation increased with an order of (001), (101), (111) grains because of the segregation along dendrite boundary.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.155-160
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• 1990

Al-rich Mg-Al spinel single crystals were grown by Verneuil process using oxygen and hydrogen flame. Spinel single crystals were grown in chemical compositions from MgO : Al2O3 mole ratio 1 : 1 to 1 : 3. Mole ratio 1 : 1 was hard to be grown and mole ratio 1 : 2.5 and 1 : 3 were grown well. Selecting well-grown mole ratio 1 : 3, seeds were prepared having [100], [110] and [111] orientation respectively. Growth rate were highest in [100] orientation and lowest in [111] orientation.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• Journal of Magnetics
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• v.9 no.4
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• pp.116-120
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• 2004

Hexagonal barium-ferrite ($BaFe_{12}O_{19}$, magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at $920^{\circ}C$. The magnetic and structural properties of 0.27 ${\mu}m$ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane ($000{\ell}$) sapphire ($Al_2O_3$) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 nm MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation ($M_s$) and the ratio $H_{cII}/H_{c{\bot}}$ for the BaM film with a 15 nm MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1126-1129
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• 2000

The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.05a
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• pp.111-111
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• 1998