• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
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• pp.11-18
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• 2004

Asymmetric rolling, in which the circumferential velocities of the upper and lower rolls are different, can give rise to intense plastic shear strains and in turn shear deformation textures through the sheet thickness. The ideal shear deformation texture of fcc metals can be approximated by the <111> // ND and $\{001\}<110>$ orientations, among which the former improves the deep drawability. The ideal shear deformation texture for bcc metals can be approximated by the Goss $\{110\}<001>\;and\;\{112\}<111>$ orientations, among which the former improves the magnetic permeability along the <100> directions and is the prime orientation in grain oriented silicon steels. The intense shear strains can result in the grain refinement and hence improve mechanical properties. Steel sheets, especially ferritic stainless steel sheets, and aluminum alloy sheets may exhibit an undesirable surface roughening known as ridging or roping, when elongated along RD and TD, respectively. The ridging or roping is caused by differently oriented colonies, which are resulted from the <100> oriented columnar structure in ingots or billets, especially for ferritic stainless steels, that is not easily destroyed by the conventional rolling. The breakdown of columnar structure and the grain refinement can be achieved by asymmetric rolling, resulting in a decrease in the ridging problem.

• 한국자기학회지
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• 제11권1호
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• pp.1-7
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• 2001

열연판을 모재로 하여 압연 및 열처리 공정을 조합한 공정을 3회 냉간압연법을 사용하여 최종두께 100$\mu\textrm{m}$로 제작한 방향성 규소강대에 대하여, 직류자기 특성 및 결정입자의 열처리 의존성, 결정방위 등을 조사하였다. 그 결과, (110)면이 거의 시료 전체표면에 성장하는 것이 관측되었으며, B$_{8}$은 1.9 T정도, 평균$\alpha$각은 약 4.6$^{\circ}$이었다. 향후 약간의 (001)조직의 집적도 개선이 추가된다면, 염가의 열연판을 모재로 사용하여 기존의 방향성 규소강판의 경우보다 훨씬 제조공정수를 단순화함으로써, 경제성이 우수한 방향성 극박 규소강대를 제작할 수 있는 가능성을 확인하였다.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.108-113
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• 1997

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

• 센서학회지
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• 제5권6호
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• pp.68-73
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• 1996

고주파 마그네트론 스펏터링법을 이용하여 유리 및 (012)면인 사파이어 기판위에 ZnO박막을 제조하였다. 유리기판위에는 (002)면을 갖는 ZnO 다결정박막이 제조되었으며, (012)면인 사파이어 기판위에는 (110)면인 ZnO에 피택셜 박막이 제조되었다. 유리 및 사파이어 기판위에 제조된 ZnO박막의 표면탄성파 특성을 조사하였다. 유리 및 사파이어 기판에 대한 중심주파수에서의 전파속도는 각각 2680 m/sec 및 5980 m/sec였으며, 기본모드에서 구한 결합계수는 각각 0.98 % 및 1.44 %였다.

• Applied Microscopy
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• 제36권spc1호
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• pp.57-61
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• 2006

High-resolution microscopy was applied for surveying hydride stability in Vanadium alloys, which are candidate for hydrogen storage materials of advanced hydrogen energy systems. $V_2H$ hydride in V alloys was stable at room temperature under the vacuum condition, but it was decomposed during heating up to $100^{\circ}C$. It was confirmed from HRTEM image and FFT that $V_2H$ has a BCT structure, where hydrogen atoms locate at octahedral sites. Crystal orientation was <110> beta// <110> mat., and lattice strain is about 10%. After the decomposition of the hydride, relatively large lattice expansion was observed in the matrix, which suggests that hydrogen atoms should be trapped by lattice defects and included in the matrix. Intensive electron beam also enhanced the decomposition.

• 한국결정성장학회지
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• 제4권1호
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• pp.57-62
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• 1994

FZ법을 이용하여 $YbFeCoO_4$ 단결정을 성장하였다. 결정 성장은 공기분위기 중에서 이루어졌으며, 성장 속도는 1~2mm/hr로 조절하였으며, 성장 초기는 $YbReO_3$와 CoO로 분해 되었으나 용융 후 액상의 조성이 변화됨에 따라 $YbFeCoO_4$ 단일사의 단결정이 육성되었다.결정의 성장 방향은 c축에 수직으로 성장하였으며 다결정의 종자 결정을 이용하여 용이성장축으로 성장된 결정의 성장 방향은[110]방향이었다.

• 한국결정학회지
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• 제6권1호
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• pp.49-55
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• 1995

HVPE(Halide Vapour Phase Epitaxy) 법에 의하여 육방정계 질화갈륨(GaN) 단결정막의 (0001)면에 섬모양으로 배향된 입방정계 β-GaN상과 육방정계 α-GaN상 사이의 상호 배향은 [110](111) β-GaN//[1120](001) α-GaN 관계를 갖는 것으로 관찰되었다. 삼각섬 모양을 β-GaN는 막표면에 평행인 (111)면에 대한 쌍정위치를 점하고 있었다. 광발광(PL) 및 국소부위 음극선 발광(CL)을 측정하여 β-GaN의 금제대폭값은 실온에서 3.18±0.30eV로 얻어졌다.

• 의학교육논단
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• 제16권1호
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• pp.32-41
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• 2014

The purpose of this study was to investigate the differences in non-cognitive factors, specifically achievement goal orientation (AGO) and self-regulated learning (SRL), influencing the academic achievement (AC) of medical and nursing students. 186 students, including 110 medical students and 76 nursing students, completed a survey, which addressed the factors of AGO and SRL. There were significant differences in the factors that affected the academic achievement of medical and nursing students. Multiple regression revealed that the AC of medical students was significantly more affected by mastery-approach AGO (p<0.05), seeking information (p<0.001), and rehearsing/memorizing SRL (p<0.01), while the AC of nursing students was affected by performance-approach AGO, self-efficacy (p<0.001), and time-management SRL. Analysis of variance revealed that significant differences in the sub-factors of AGO and SRL between the medical and nursing students. Thus, it was found that the academic achievement of medical and nursing students was influenced by non-cognitive factors, but there were significant differences in the sub-factors by group. It is suggested that comparative studies with other student groups and a longitudinal study of medical and nursing students need to be conducted, and a personalized counseling and learning intervention focusing on non-cognitive factors should be provided to medical and nursing students.

• 한국재료학회지
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• 제24권2호
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• pp.105-110
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• 2014

The aim of this work was to investigate the effects of electrodeposition conditions on the microstructural characteristics of copper thin films. The microstructure of electroplated Cu films was found to be highly dependent on electrodeposition conditions such as system current and current density, as well as the bath solution itself. The current density significantly changed the preferred orientation of electroplated Cu films in a DC system, while the solution itself had very significant effects on microstructural characteristics in a pulse-reverse pulse current system. In the DC system, polarization at high current above 30 mA, changed the preferred orientation of Cu films from (220) to (111). However, Cu films showed (220) preferred orientation for all ranges of current density in the pulse-reverse pulse current system. The grain size decreased with increasing current density in the DC system while it remained relatively constant in the pulse-reverse pulse current system. The sheet resistance increased with increasing current density in the DC system due to the decreased grain size.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.