• Title/Summary/Keyword: (110) orientation

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Alloy 690에서 용체화처리에따른 미세조직 관찰

  • 이용복;이덕열;장진성;국일현
    • Proceedings of the Korean Nuclear Society Conference
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    • 1996.11b
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    • pp.469-474
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    • 1996
  • Alloy 690은 응력부식 균열에 대한 저항성이 요구되는 원자력 발전소 증기발생기 전열관 재료에 사용되고 있다$^{(1)}$ . 응력부식 균열에 대한 저항성은 주로 결정입계에 존재하는 크롬탄화물의 기여에 의한 것이 대부분이다. 크롬탄화 석출물의 핵생성을 알아보기 위해서 110$0^{\circ}C$에서 용체화처리를 0, 1, 3, 10분 동안 하여 관찰하였다. 용체화처리한 모든 시편에서 결정입계에 존재하는 석출물의 분포는 쌍정과 교차하면서 갑자기 변화하는 것을 관찰 할 수 있다. 이처럼 석출물이 존재하지 않는 결정입계들은 대부분 낮은 ∑ 값의 CLS으로부터 약간 벗어난 입계가 될 것이다. 결정입계에 존재하는 석출물은 기지와 Cube-Cube orientation relationship을 갖는다. 그리고 단지 하나의 결정입과 반정합을 이룬다. 기지와 반정합을 이루는 석출물은 M$_{23}$ C$_{6}$형태의 크롬 탄화물이고 격자상수는 기지의 격자상수보다 3배 크다.

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The mediating effect of the structure supply chain orientation and the customer-oriented supply chain performance on the path between the supply chain orientation and the export performance in manufacturing SMEs (중소 제조기업의 공급사슬지향성과 수출성과의 경로에서 구조적 공급사슬지향성과 고객중심 공급사슬 성과의 매개효과)

  • Cho, Yeon-Sung
    • International Area Studies Review
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    • v.18 no.3
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    • pp.89-110
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    • 2014
  • This study build an integrated model of a relationship between the supply chain orientation(SCO), the performance of a supply chain management(SCM) and an export performance in a domestic manufacturing SMEs. Twelves hypotheses including the mediating effect of the structural SCO and the customer-focused performance of SCM were analyzed on the 212 SMEs. In the result of the analysis, the strategic SCO has a positive effect on the both of the SCO and the operational performance of the SCM. The structural SCO has a positive effect on the performance of the SCM. Also, the operational performance of the SCM has a positive effect on the export performance of SMEs. In the mediating effect, the structural SCO has a fully mediating effect between the strategic SCO and the customer-focused performance of SCM. In addition, it has a partial mediating effect on the relationship of the strategic SCO and the operational performance of the SCM. The operational performance of the SCM has a fully mediating effect between the structural SCO and the customer-focused performance of SCM.

The effects of TiO2 interlayer phase transition on structural and electrical properties of PLZT Thin Films (TiO2 Interlayer의 상변화에 따른 PLZT 박막의 구조 및 전기적 특성)

  • Lee, Chul-Su;Yoon, Ji-Eon;Hwang, Dong-Hyun;Cha, Won-Hyo;Sona, Young-Gook
    • Journal of the Korean Vacuum Society
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    • v.16 no.6
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    • pp.446-452
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    • 2007
  • [ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

Effect of Underlying Poly-Silicon on the Thermal Staability of the Ti-silicide Film (티타니움 실리사이드 박막의 열안정성에 미치는 기판 실리콘막의 영향)

  • Kim, Yeong-Uk;Lee, Nae-In;Go, Jong-U;Kim, Il-Gwon;An, Seong-Tae;Lee, Jong-Sik;Song, Se-An
    • Korean Journal of Materials Research
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    • v.3 no.2
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    • pp.158-165
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    • 1993
  • Abstract To investigate the effect of underlying Si on the thermal stability of the TiS$i_2$ film, TiS$i_2$ films obtained by the solid-state reaction of the Ti film on as-deposited or on heat-treated poly-silicon and amorphous-silicon were annealed at 90$0^{\circ}C$ for various times. The poly-Si film was evaluated by XRD, SEM and TEM. The thermal stability of the TiS$i_2$ film was evaluated by measuring the sheet resistance and microstructural evolution during furnace annealing. Agglomeration of the TiSi, film occurred more on amorphous-Si than on poly-Si. The thermal stability of the TiS$i_2$ film was improved by annealing poly-Si. The Si layer crystallized from amorphous-Si has an equiaxed structure with the (111) preferred orientation whereas for as-deposited poly-Si has a columnar structure with the (110) orientation. Better thermal stability of the TiS$i_2$ film can be obtained by the higher surface energy of underlying poly-Si.

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Effect of CeO$_2$ buffer layer on the crystallization of YBCO thin film on Hastelloy substrate (비정질 금속 기판상에 증착된 YBCO 박막의 결정성에 대한 CEO$_2$ 완충막의 효과)

  • Kim, Sung-Min;Lee, Sang-Yeol
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.392-396
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    • 1999
  • Superconducting YBa$_2Cu_3O_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy(Ni-Cr-Mo alloys) with CeO$_2$ buffer layer in-situ by pulsed laser deposition in a multi-target processing chamber. To apply superconducting property on power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to grow the YBCO films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting overlayers and non-crystallization of YBCO on amorphous substrate. It is necessary to use a buffer layer to overcome the difficulties. We have chosen CeO$_2$ as a buffer layer which has cubic structure of 5.41 ${\AA}$ lattice parameter and only 0.2% of lattice mismatch with 3.82 ${\AA}$ of a-axis lattice parameter of YBCO on [110] direction of CeO$_2$ In order to enhance the crystallization of YBCO films on metallic substrates, we deposited CeO$_2$ buffer layers with varying temperature and 02 pressure. By XRD, it is observed that dominated film orientation is strongly depending on the deposition temperature of CeO$_2$ layer. The dominated orientation of CeO$_2$ buffer layer is changed from (200) to(111) by increasing the deposition temperature and this transition affects the crystallization of YBCO superconducting film on CeO$_2$ buffered Hastelloy.

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Potentials and Challenges of the Usability of Art Museum Mobile Applications (미술관 모바일 애플리케이션의 사용성에 대한 잠재력과 문제점)

  • Rhee, Boa
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.4
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    • pp.103-110
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    • 2015
  • The biggest challenge of managing mobile interpretative device is that visitors do not have the mobile experience. Thus, in the research of the mobile application of the Leeum (Samsung Museum of Art), a short orientation session as a treatment was provided to survey participants to make them use of a mobile experience. The orientation solved the problem of hesitancy of using smartphone in other researches, it was simultaneously the uniqueness of the methodology. Based on the research data, their satisfaction with visiting experience and with using the application appeared to be relatively high. A half of participants used the application for 10 minutes which is accounted for 20-30% of the total viewing time. Participants (80.3%) engaged in each exhibit with the application in less than 30 sec.-1 minute. Comparing with the average time of engagement (10-30 sec.) for each exhibit without using mobile applications, it is possible to conclude that the mobile application notably contributed to make participants engage with exhibits longer.

A Study on the Marking Efficiency of Check-Patterned Shirts (체크무늬 Shirts의 Marking 효율성에 관한 연구)

  • Hong, Eun-Hee;Suh, Mi-A
    • The Research Journal of the Costume Culture
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    • v.17 no.5
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    • pp.746-757
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    • 2009
  • This study is focused on the elucidation of efficient and correct marking methods by comparing and analyzing marker efficiency depending on the marking job condition such as interval of checking-pattern, width of materials, and marker orientation using man's shirts. To compare the marking efficiency of shirts, plain and check-patterned materials with the intervals of $1.5{\times}1.5cm$, $3{\times}3cm$, and $5{\times}5cm$ were selected. First, in the comparison of marking efficiency depending on materials width, the highest efficiency was obtained with nap-either-way position of 150cm, plain materials and lowest efficiency with nap-one-way position of 150cm, $5{\times}5cm$ check-pattern materials. Regardless of the direction of marker position, the marking efficiency of 150cm width was higher than 110cm width in the plain, $1.5{\times}1.5cm$ and $3{\times}3cm$ check-pattern interval, but the marking efficiency of 110cm width was higher than 150cm width in the $1.5{\times}1.5cm$ check-pattern interval. Second, in the comparison of marking efficiency depending on the direction of marker position, regardless of check-pattern interval and material width, the highest efficiency was obtained with nap-either-way position. And nap-up-and-down and nap-one-way follows next. Third, in the comparison of marking efficiency depending on check-pattern interval, the efficiency of plain materials was higher than those of check-patterned materials. And increasing the intervals decreased marking efficiency and vice versa. So the lowest efficiency was obtained with $5{\times}5cm$ check patterned materials.

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Microstructural ananalysis of AlN thin films on Si substrate grown by plasma assisted molecular beam epitaxy (RAMBE를 사용하여 Si 기판 위에 성장된 AIN 박막의 결정성 분석)

  • 홍성의;한기평;백문철;조경익;윤순길
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.22-26
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    • 2001
  • Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

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Preparation of $Ba_{0.5}Sr_{0.5}TiO_3$ Thin Films by Off-Axis RF Magnetron Sputtering (Off-Axis RF Magnetron Sputtering 방법에 의한 $Ba_{0.5}Sr_{0.5}TiO_3$ 박막의 제조)

  • Shin, Jin;Hahn, Taek-Sang;Kim, Young-Hwan;Lee, Jae-Jun;Park, Soon-Ja;Oh, Myung-Hwan;Choi, Sang-Sam
    • Journal of the Korean Ceramic Society
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    • v.31 no.12
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    • pp.1429-1436
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    • 1994
  • We have prepared Ba0.5Sr0.5TiO3 thin films on Si substrate without buffer layer. Deposition was carried out by off-axis rf magnetron sputtering method using Ba0.5Sr0.5TiO3 stoichiometric target. The substrate temperature was changed from 40$0^{\circ}C$ to $700^{\circ}C$ during deposition. As the substrate temperature increased, relative intensity of (110) peak increased up to $600^{\circ}C$, however preferred orientation changed from (110) to (h00) beyond $650^{\circ}C$ of substrate temperature. Deposited films showed microstructures with fine grains whose diameters are less than 100 nm, and columnar structure was observed in the cross-sectional SEM micrograph. AES depth profile showed no significant diffusion at the interfacial reaction area. The effective dielectric constant of films showed maximum value at $600^{\circ}C$, and the leakage current increased with increasing substrate temperature, which may be ascribed to the crystallization of amorphous phases at grain boundary.

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Preparation and Crystallization Behavior of Luster Glaze Containing CeO2 (CeO2 함유 러스터 유약 제조 및 결정화 특성)

  • 김성균;이성민;유중환;김형태
    • Journal of the Korean Ceramic Society
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    • v.40 no.12
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    • pp.1224-1228
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    • 2003
  • The crystallization behavior of a luster glaze containing ceria has been investigated. When glazed specimens were sintered at 110$0^{\circ}C$, crystalline ceria particles were preferentially precipitated with (100) planes parallel to the specimen surface with the size of around 200 nm. The particle population in the surface region was much higher than inside glaze, covering over 60% of the specimen surface area. Crystallization of the particles with preferred orientation was promoted, after the removal of internal interface through complete melting of the fit particles. The luster effect seems to result from CeO$_2$ particles of high refractive index, their strong light scattering at visible rage due to fine crystalline size 200 nm and their planar arrangement in the surface region.