• Title/Summary/Keyword: (100) Si

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Directionality of O-Phthaladehyde adsorbed on H-Si(100) Surface Using NEXAFS and HRPES

  • Kim, Gi-Jeong;Park, Seon-Min;Im, Hui-Seon;Kim, Bong-Su;Lee, Han-Gil
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.79-79
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    • 2010
  • The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

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Effect of SiO2 on yield and phenolic profile of Tartary buckwheat

  • Park, Jong In;Kalam, Azad Obyedul;Germ, Mateja;Kreft, Ivan;Park, Cheol Ho
    • Proceedings of the Plant Resources Society of Korea Conference
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    • 2018.10a
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    • pp.132-132
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    • 2018
  • The aim of this study was to enhance the Tartary buckwheat growth and phenolic profile by the application of $SiO_2$ on potsin the glasshouse. The liquid of $SiO_2$ were applied at three times after three weeks of sowing at ten days interval. The doses of the $SiO_2$ was low (2.5 ml/5 L water), high (10 ml in 5 L water) and control experiment was done without $SiO_2$. In this study, it is clearly shown that high dose of $SiO_2$ increased the buckwheat plant growth including, plant height, leaf length and width, stem diameter, fresh weight and number of seed per plant compared to control treatment. In the same way, the total phenolic compound (1421 mg/100 g), total flavonoid (35.1 mg/100g), rutin (3,130 mg/100g) and DPPH (82%) in plant were also increased high dose of $SiO_2$ compared to control (1,175 mg/100g, 31.9mg/100g, 860 mg/100g, 59%, respectively). Moreover, higher phenolic compound (1,421 mg/100g) and DPPH (82%) was observed in plant compared to seed (196 mg/100mg, 72 %, respectively). In the contrary, total flavonoid (36.2 mg/100g) and rutin (1,400 mg/100g) was higher in buckwheat seed compared to plant (35.1 mg/100g, 3,130 mg/100g, respectively). Finally, it is concluded that higher dose of $SiO_2$ enhance buckwheat growth and phenolic profile. Further investigation is needed to evaluate the optimum dose of $SiO_2$ according to soil conditions in the field.

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Si(100) ETCHING BY THERMAL-ENERGY HYDROGEN ATOMS

  • Kang, Joo-Hyun;Jo, Sam-Keun;John G. Ekerdt
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.59-65
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    • 1997
  • Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

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Chemisorption and orientation of Selenopheneon Si(100)-$2{\times}1$

  • Lee, Han-Koo;Kim, Ki-Jeong;Kim, Hyeong-Do;Shin, Hyun-Joon;Kim, Bong-Soo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.372-372
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    • 2010
  • We have investigated adsorption of selenophene on Si(100) at room temperature using high resolution photoemission spectroscopy (HRPES) and near edge X-ray absorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, Se 3d spectra of selenophene on Si(100) show that selenophene is nondissociatively chemisorbed on Si(100)-$2{\times}1$ through [2+2] cycloaddition. NEXAFS has been conducted to characterize the adsorption geometry of selenophene on Si(100). Since the $\pi^*$ orbital of C=C bond show good angular dependence in carbon K-edge NEXAFS spectra, the angle $53{\pm}5^{\circ}$ determined from NEXAFS spectra. This majority structure is consistent with the [2+2] cycloaddition of selenophene to the dimer of the Si(100)-$2{\times}1$ surface.

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Crystal growth of 3C-SiC on Si(100) Wafers (Si(100)기판상에 3C-SiC결정성장)

  • Chung, Yun-Sik;Chung, Gwiy-Sang;Nishino, Shigehiro
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1593-1595
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    • 2002
  • Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

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Interfacial Characteristics of $\beta$-SiC Film Growth on (100) Si by LPCVD Using MTS (MTS를 사용한 LPCVD 법에 의한 (100)Si 위의 $\beta$-SiC 증착 및 계면특성)

  • 최두진;김준우
    • Journal of the Korean Ceramic Society
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    • v.34 no.8
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    • pp.825-833
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    • 1997
  • Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

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Epitaxial Growth of Ge on Si(100) and Si(111) Surfaces (Si(100)와 Si(111) 표면의 Ge 에피 성장 연구)

  • Khang, Yun-Ho;Kuk, Young
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.161-165
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    • 1993
  • The geometrical and electronic structure of epitaxially grown Ge on Si(100) and Si(111) surfaces has been studied by scanning tunneling microscopy. Since Ge atoms could be distinguished from Si atoms by scanning tunneling spectroscopy and voltage dependent STM images, the growth mode of the added layer could be studied. On the (100) surface with a (2${\times}$1) reconstruction, Ge overlayer grow preferentially on the B type step edges at 720K. On the (111) surface, Ge overlayer also grow on the step edges with (7${\times}$7) and (5${\times}$5) structure depending on their coverage and annealing temperature.

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Ti Capping Layer에 의한 Co-silicide 박막의 형성에 관한 연구

  • ;;;;;;;;Kazuyuki Fujigara
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.61-61
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    • 2000
  • Device의 고성능화를 위하여 소자의 고속화, 고집적화가 가속됨에 따라 SALICIDE Process가 더욱 절실하게 요구되고 있다. 이러한 SALICIDE Process의 재료로써는 metal/silicide 중에서 비저항이 가장 낮은 TiSi2(15-25$\mu$$\Omega$cm), CoSi2(17-25$\mu$$\Omega$cm)가 일반적으로 많이 연구되어 왔다. 그러나 Ti-silicide의 경우 Co-silicide는 배선 선폭의 감소에 따른 면저항 값의 변화가 작으며, 고온에서 안정하고, 도펀트 물질과 열역학적으로 안정하여 화합물을 형성하지 않는다는 장점이 있으마 Ti처럼 자연산화막을 제거할 수 없어 Si 기판위에 자연산화막이 존재시 균일한 실리사이드 박막을 형성할 수 없는 단점등을 가지고 있다. 본 연구에서는 Ti Capping layer 에 의한 균일한 Co-silicide의 형성을 일반적인 Si(100)기판과 SCl 방법에 의하여 chemical Oxide를 성장시킨 Si(100)기판의 경우에 대하여 연구하였다. 스퍼터링 방법에 의해 Co를 150 증착후 capping layer로써 TiN, Ti를 각각 100 씩 증착하였다. 열처리는 RTP를 이용하여 50$0^{\circ}C$~78$0^{\circ}C$까지 4$0^{\circ}C$ 구간으로 N2 분위기에서 30초 동안 열처리를 한후, selective metal strip XRD, TEM의 분석장비를 이용하여 관찰하였다. lst RTP후 selective metal strip 후 면저항의 측정과 XRD 분석결과 낮은 면저항을 갖는 CoSi2로의 상전이는 TiN capping과 Co 단일박막이 일반적인 Si(100)기판과 interfacial oxide가 존재하는 Si(100)기판위에서 Ti capping의 경우보다 낮은 온도에서 일어났다. 또한 CoSi에서 CoSi2으로 상전이는 일반적인 Si(100)기판위에서 보다 interfacial Oxide가 존재하는 Si(100)기판 위에 TiN capping과 Co 단일박막의 경우 열처리 후에도 Oxide가 존재하는 불균인한 CoSi2박막을 관찰하였으며, Ti capping의 경우 Oxise가 존재하지 않는 표면과 계면이 더 균일한 CoSi2 박막을 형성 할 수 있었다.

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Phase transformation and magnetic properties of NiFe thin films on Si(100) wafer and SiO2/Si(100) substrate by co-sputtering (Si(100) wafer와 SiO2/Si(100) 기판에 동시 스퍼터링법으로 증착된 NiFe 합금 박막의 상변화 및 자기적 특성)

  • Kang, Dae-Sik;Song, Jong-Han;Nam, Joong-Hee;Cho, Jeong-Ho;Chun, Myoung-Pyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.216-220
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    • 2010
  • Ni-Fe alloys have various applications such as thin film inductor, thin film transformer, magnetic head's shield case, etc. Magnetic properties of Ni-Fe thin films depend on the process parameters such as thickness, contents, deposition rate, substrates, etc. In this study, NiFe films with a thickness of about 150nm were deposited on Si(100) wafer and $SiO_2$/Si(100) substrate at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Their phase formation and magnetic properties as a function of annealing temperature were investigated with XRD, FE-SEM and VSM. The assputtered films have BCC structure. With increasing annealing temperature, NiFe thin film for $SiO_2$/Si(100) substrate transformed completely from BCC to FCC phase above $500^{\circ}C$, but some BCC phase remained above $500^{\circ}C$ on Si(100) wafer. For samples annealed at $450^{\circ}C$, squareness ratio of NiFe thin film shows peak value and its saturation magnetization is around 0.0118 emu, which means that the optimum annealing temperature of NiFe thin film seems to be $450^{\circ}C$. The saturation magnetization of films decreased rapidly above the annealing temperature of $500^{\circ}C$ due to phase transformation from BCC to FCC phase.

GaAs Epilayer Growth on Si(100) Substrates Cleaned by As/Ga Beam and Its RHEED Patterns (As과 Ga 빔 조사에 의해 세척된 Si(100) 기판 위에 GaAs 에피층 성장과 RHEED 패턴)

  • Yim, Kwang-Gug;Kim, Min-Su;Leem, Jae-Young
    • Journal of the Korean institute of surface engineering
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    • v.43 no.4
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    • pp.170-175
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    • 2010
  • The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.