• Title/Summary/Keyword: (박막 트랜지스터 검사

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Recent trend of DRAM technology (DRAM기술의 최신 기술 동향)

  • 유병곤;백종태;유종선;유형준
    • Electrical & Electronic Materials
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    • v.8 no.5
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    • pp.648-657
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    • 1995
  • 정보처리의 다양화, 고속화를 위하여 장래의 집적회로는 다량의 정보를 단시간에 처리하지 않으면 안된다. 종래, 3년에 4배의 고집적화가 실현되어 LSI개발에 기술 견인차의 역할을 하고 있는 DRAM(Dynamic Random Access Memory)은 미세화기술의 한계를 우려하면서도 오히려 개발에 박차를 가하고 있다. 이러한 DRAM의 미세, 대용량화에는 미세가공 기술, 새로운 메모리 셀과 트랜지스터 기술, 새로운 회로 기술, 그 이외에 재료박막기술, Computer aided design/Design automation(CAD/DA) 기술, 검사평가기술 혹은 소형팩키지(package)기술등의 광범위한 기술발전이 뒷받침되어 왔다. 그 중에서 미세가공 기술 및 새로운 트랜지스터 기술과 메모리 셀 기술을 중심으로 개발 동향을 살펴보고 최근에 발표된 1Gbit DRAM의 시제품 기술에 대하여 분석해 보기로 한다.

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duoPIXTM X-ray Imaging Sensor Composing of Multiple Thin Film Transistors in a Pixel for Digital X-ray Detector (픽셀내 다수의 박막트랜지스터로 구성된 듀오픽스TM 엑스선 영상센서 제작)

  • Seung Ik, Jun;Bong Goo, Lee
    • Journal of the Korean Society of Radiology
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    • v.16 no.7
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    • pp.969-974
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    • 2022
  • In order to maximize dynamic range and to minimize image lag in digital X-ray imaging, diminishing residual parasitic capacitance in photodiode in pixels is critically necessary. These requirements are more specifically requested in dynamic X-ray imaging with high frame rate and low image lag for industrial 2D/3D automated X-ray inspection and medical CT imaging. This study proposes duoPIXTM X-ray imaging sensor for the first time that is composed of reset thin film transistor, readout thin film transistor and photodiode in a pixel. To verify duoPIXTM X-ray imaging sensor, designing duoPIXTM pixel and imaging sensor was executed first then X-ray imaging sensor with 105 ㎛ pixel pitch, 347 mm × 430 mm imaging area and 3300 × 4096 pixels (13.5M pixels) was fabricated and evaluated by using module tester and image viewer specifically for duoPIXTM imaging sensor.

Radiation Resistance Evaluation of Thin Film Transistors (박막트랜지스터의 방사선 내구성 평가)

  • Seung Ik Jun;Bong Goo Lee
    • Journal of the Korean Society of Radiology
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    • v.17 no.4
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    • pp.625-631
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    • 2023
  • The important requirement of industrial dynamic X-ray detector operating under high tube voltage up to 450 kVp for 24 hours and 7 days is to obtain significantly high radiation resistance. This study presents the radiation resistance characteristics of various thin film transistors (TFTs) with a-Si, poly-Si and IGZO semiconducting layers. IGZO TFT offering dozens of times higher field effect mobility than a-Si TFT was processed with highly hydrogenated plasma in between IGZO semiconducting layer and inter-layered dielectric. The hydrogenated IGZO TFT showed most sustainable radiation resistance up to 10,000Gy accumulated, thus, concluded that it is a sole switching device in X-ray imaging sensor offering dynamic X-ray imaging at high frame rate under extremely severe radiation environment such as automated X-ray inspection.

Dynamic Analysis of the PDLC-based Electro-Optic Modulator for Fault Identification of TFT-LCD (박막 트랜지스터 기판 검사를 위한 PDLC 응용 전기-광학 변환기의 동특성 분석)

  • 정광석;정대화;방규용
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.4
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    • pp.92-102
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    • 2003
  • To detect electrical faults of a TFT (Thin Film Transistor) panel for the LCD (Liquid Crystal Display), techniques of converting electric field to an image are used One of them is the PDLC (polymer-dispersed liquid crystal) modulator which changes light transmittance under electric field. The advantage of PDLC modulator in the electric field detection is that it can be used without physically contacting the TFT panel surface. Specific pattern signals are applied to the data and gate electrodes of the panel to charge the pixel electrodes and the image sensor detects the change of transmittance of PDLC positioned in proximity distance above the pixel electrodes. The image represents the status of electric field reflected on the PDLC so that the characteristic of the PDLC itself plays an important role to accurately quantify the defects of TFT panel. In this paper, the image of the PDLC modulator caused by the change of electric field of the pixel electrodes on the TFT panel is acquired and how the characteristics of PDLC reflect the change of electric field to the image is analyzed. When the holding time of PDLC is short, better contrast of electric field image can be obtained by changing the instance of applying the driving voltage to the PDLC.

Evaluation of Dynamic X-ray Imaging Sensor and Detector Composing of Multiple In-Ga-Zn-O Thin Film Transistors in a Pixel (픽셀내 다수의 산화물 박막트랜지스터로 구성된 동영상 엑스레이 영상센서와 디텍터에 대한 평가)

  • Seung Ik Jun;Bong Goo Lee
    • Journal of the Korean Society of Radiology
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    • v.17 no.3
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    • pp.359-365
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    • 2023
  • In order to satisfy the requirements of dynamic X-ray imaging with high frame rate and low image lag, minimizing parasitic capacitance in photodiode and overlapped electrodes in pixels is critically required. This study presents duoPIXTM dynamic X-ray imaging sensor composing of readout thin film transistor, reset thin film transistor and photodiode in a pixel. Furthermore, dynamic X-ray detector using duoPIXTM imaging sensor was manufactured and evaluated its X-ray imaging performances such as frame rate, sensitivity, noise, MTF and image lag. duoPIXTM dynamic X-ray detector has 150 × 150 mm2 imaging area, 73 um pixel pitch, 2048 × 2048 matrix resolution(4.2M pixels) and maximum 50 frames per second. By means of comparison with conventional dynamic X-ray detector, duoPIXTM dynamic X-ray detector showed overall better performances than conventional dynamic X-ray detector as shown in the previous study.