• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1040-1048
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• 1998

Ferroelectric properties of{{{{ { { { {SrBi }_{2 }Ta }_{2-x }Nb }_{x }O }_{9 } }} (SBIN) thin films were affected by the amount of Bi content in SBTN. The addition of Bi into the SBTN films could be accomplished by heat treating SBTN/Bi2O3/SBTN het-erostructures fabricated by r.f. magnetron sputtering method. The variation of Bi content was controlled by changing the thickness of the sandwiched Bi2O3 in SBTN/Bi2O3/SBTN heterostructure from 50 to 400$\AA$. As changing the thickness of the sandwiched Bi2O3 in Bi2O3 films was increased from 0 to 100$\AA$ the grain grew faster and the ferroelectric pro-perties were improved. On the other hand when the thickness of Bi2O3 films was thicker than 150$\AA$ the fer-roelectric properties were deteriorated Especially for SBTN thin films inserted by 400$\AA$ Bi2O3 layer a Bi2Phase appeared as a second phase resulting in poor ferroelectric properties. The maximum remanent po-larization (2Pr) and coercive field(Ec) were obtained for the SBTN/Bi2O3/(100$\AA$)/SBTN thin films. In this case 2Pr and Ec were 14.75 $\mu$C/cm2 and 53.4kV/cm at an applied voltage of 3V respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.618-620
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• 2002

The sintering and dielectric characteristics of $(1-x)Al_2O_3-xLa_2O_3$ ceramics (x=0.2, 0.4, 0.5, 0.6, 0.8, 1.0) were investigated. The sample of x=0.6 composition showed a largest density$(6.5g/cm^3)$ in the all samples and its grain were very uniform. The dielectric constant of the samples linearly increased from 9 to 17 up to x=0.6 with a increasing of x. The temperature coefficient of resonance frequency for the samples showed a positive value at x=0.2 and a negative value at x>0.4.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of the Korean Chemical Society
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• v.42 no.3
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• pp.315-322
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• 1998

A series of new dimesogenic compounds were prepared and their thermotropic and liquid crystalline properties were studied by differential scanning calorimetry and on a hot-stage of a polarizing microscope. These compounds, 1,10-bis[2,5-bis(4-substitutedphenoxycarbonyl)phenoxy]decanes, consist of two bis(ρ-substitutedphenoxy)terephthalate units interconnected through a oxydecamethyleneoxy spacer on the central terephthaloyl units resulting in the structure of "H-shaped" dimeric twin compounds. The terminal substitutent groups were changed; X=-F, -H, -I, -Cl, -Br, $-NO_2,\;-CF_3,\;-OC_4H_9,\;-CN\;and\;-C_6H_5.$ The compounds with X=$-OC_4H_9,\;-CN\;and\;-C_6H_5$ were monotropically nematic. In contrast, the compounds with $X=-F, -H, -I, -Cl, -Br, $-NO_2\;and\;-CF_3$ were non-liquid crystals. The nematic group efficiency of these compounds was in the order of -C_6H_5>-CN>-OC_4H_9.$

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.427-431
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• 1995

The influence of Nd and B contents on the magnetic properties and structures of ${\alpha}-Fe$ based Nd-(Fe,Co)-B-Mo-Cu alloys was investigated. $Nd_{4}{(Fe_{0.9}Co_{0.1})}_{92-x}B_{x}Mo_{3}Cu_{1}$ and $Nd_{x}{(Fe_{0.9}Co_{0.1})}_{86-x}B_{10}Mo_{3}Cu_{1}$ amorphous alloys prepared by rapid solidification process were crystallized to form nanocrystalline structure. The increase of B content in $Nd_{4}{(Fe_{0.9}Co_{0.1})}_{92-x}B_{x}Mo_{3}Cu_{1}$ nanocrystalline resulted in the change of stucture of soft phase in the sequence of ${\alpha}-Fe$->${\alpha}-Fe+Fe_{3}B$->$Fe_{3}B$. The coercivitis of the alloys were increased with increasing B content and was 263 kA/m at x=18. On the contrary, the remanence has shown an opposite trends. The increase of Nd content in $Nd_{x}{(Fe_{0.9}Co_{0.1})}_{86-x}B_{10}Mo_{3}Cu_{1}$ nanocrystalline containing ${\alpha}-Fe$ as main phase had no effect on the structure and improved coercivity up to 256 kA/m. However, the remanence was decreased from 1.4 T to 1.15 T according to the increase of Nd content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Journal of Nutrition and Health
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• v.24 no.4
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• pp.337-343
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• 1991

The effect of 9-methyl folate on histidine oxidation, the uptake of an injected dose of $[^{3}H]folate$ by the livers and kidneys, the hepatic and blood folate levels were investigated by feeding crude x-methyl folate(XMF) at a level of 5 g per kg diet. 9-Methyl folate is konwn as a major forate antagonist in XMF to produce deficiency signs in rat. Feeding of XMF decreased histidine oxidation and hepatic folate levels significantly, which showed the function of 9-methyl folate as an antifolate in rats. The hepatic uptake of labeled folate in XMF- fed rats was decreased significantly. These data led to conclude that 9-methyl folate inhibited folate uptake and retention by tissue, especially liver, which could explain the low liver folate levels and the decreased histidine oxidation. However, only very low level of 9-methyl folate was detected in liver. It suggested that 9-methyl folate may be metabolized very quickly in the liver after uptaken.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.85-88
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• 2009

Magnetic phases of polycrystalline $Ge_{1-x}Mn_x$ thin films were studied. The $Ge_{1-x}Mn_x$ thin films were grown at $400^{\circ}C$ by using a molecular beam epitaxy. The $Ge_{1-x}Mn_x$thin films were p-type and electrical resistivities were $4.0{\times}10^{-2}{\sim}1.5{\times}10^{-4}ohm-cm$. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the $Ge_{1-x}Mn_x/SiO_2$/Si(100) thin films was $Ge_3Mn_5$ phase which has about 310 K of Curie temperature. Moreover, the $Ge_{1-x}Mn_x$ thin film which had $Ge_3Mn_5$ phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.94-102
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• 1994

x- 0.51인 GaxIn1-x-P 에피층을 저압 MOCVD 성장법으로 TEGa(triethylgallium) TmIn(trimethylindium)등의 MO(metalorganic) 원료와 PH3(phosphine)를 사용하여 GaAs(100) 기판위에 성장하였다. 성장조건에 의한 표면 morphology 결정결함 성분비 PL spectra 운반자 농도와 이동도 및 DLTS spectra와 같은 성장층의 특성을 관찰하였다, $650^{\circ}C$의 성장온도와 V/III비, 즉 TEGa와 TMIn 두 원료의 유량에 대한 PH3 의유량변화에 아무런 영향을 받지 않음을 알 수 있었다. Ga0.51In0.49P에피층과 기판의 격자상수 차에 의한 격자 부정합 $\Delta$a /a0은 약 (3.7~8.9)x10-4 이었으며 실온과 5Kd서 에피층의 PL 피크 에너지는 각각 1.85eV와 1.9eV였다. 성장층의 운반자 농도와 이동도는 V/III 비에 따라 달라지 는데 그비가 120에서 220으로 증가함에 따라 농도는 1.8x1016cm-3에서 8.2x1016cm-3로 증가하였고 이동도 는 1010cm/V.sec에서 366cm/V.sec로 감소하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.1-33.1
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• 2009

Lead-free (1-x)$(Na_{0.5}K_{0.5})NbO_3$-xBa($Ti_{0.9}Sn_{0.1})O_3$ [NKN-BTS-100x] ceramics doped with 1 mol% $MnO_2$ have been prepared by the conventional solid state method and their structural and piezoelectric properties were investigated. The NKN-BTS-100x ceramics exhibited a dense and homogeneous microstructure when they were sintered at $1030-1150^{\circ}C$. Grain growth was observed for the specimen sintered at relatively low temperature of $1050^{\circ}C$. A tetragonal/orthorhombic morphotropic phase boundary (MPB) in the perovskite structure was also appeared for the NKN-BTS-100x ceramics (0.04$1050^{\circ}C$. The enhanced piezoelectric properties in the NKN-BTS ceramics with a MPB composition were obtained. Especially, for the NKN-BTS-6 ceramics, a high dielectric constant (${\varepsilon}^T_3/\varepsilon_0=1,400$), piezoelectric constant ($d_{33}=237$) and electromechanical coupling factor ($k_p=0.42$) were obtained.