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Position of the hyoid bone and its correlation with airway dimensions in different classes of skeletal malocclusion using cone-beam computed tomography

  • Shokri, Abbas;Mollabashi, Vahid;Zahedi, Foozie;Tapak, Leili
    • Imaging Science in Dentistry
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    • 제50권2호
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    • pp.105-115
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    • 2020
  • Purpose: This study investigated the position of the hyoid bone and its relationship with airway dimensions in different skeletal malocclusion classes using cone-beam computed tomography (CBCT). Materials and Methods: CBCT scans of 180 participants were categorized based on the A point-nasion-B point angle into class I, class II, and class III malocclusions. Eight linear and 2 angular hyoid parameters(H-C3, H-EB, H-PNS, H-Me, H-X, H-Y, H-[C3-Me], C3-Me, H-S-Ba, and H-N-S) were measured. A 3-dimensional airway model was designed to measure the minimum cross-sectional area, volume, and total and upper airway length. The mean crosssectional area, morphology, and location of the airway were also evaluated. Data were analyzed using analysis of variance and the Pearson correlation test, with P values <0.05 indicating statistical significance. Results: The mean airway volume differed significantly among the malocclusion classes(P<0.05). The smallest and largest volumes were noted in class II (2107.8±844.7 ㎣) and class III (2826.6±2505.3 ㎣), respectively. The means of most hyoid parameters (C3-Me, C3-H, H-Eb, H-Me, H-S-Ba, H-N-S, and H-PNS) differed significantly among the malocclusion classes. In all classes, H-Eb was correlated with the minimum cross-sectional area and airway morphology, and H-PNS was correlated with total airway length. A significant correlation was also noted between H-Y and total airway length in class II and III malocclusions and between H-Y and upper airway length in class I malocclusions. Conclusion: The position of the hyoid bone was associated with airway dimensions and should be considered during orthognathic surgery due to the risk of airway obstruction.

스티렌 이량체 유분의 열분해 연구 (A Study on Pyrolysis of Styrene Dimer Fraction (SDF))

  • 배해송;강용;조득희;최명재;이상봉
    • 공업화학
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    • 제17권3호
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    • pp.321-326
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    • 2006
  • 폐발포폴리스티렌(WEPS)의 열분해 반응시 부생되는 약 5~15%의 난분해성 스티렌 이량체 유분(SDF, 주성분: 47 wt% 1,3-diphenylpropane)의 열분해방법에 대하여 검토하였다. 가압열분해반응에서는 반응온도 $360^{\circ}C$에서 152~202 kPa이 최적의 조건으로 판단되었다. 이 반응조건에서 오일 수율 73.8%와 벤젠 0.4%, 톨루엔 30.9%, 에틸벤젠 15.0%, 스티렌 19.6%, 알파메틸스티렌 4.2%의 선택율로 얻을 수 있었다. 상압연속 열분해반응에서는 반응온도 $510{\sim}610^{\circ}C$, 접촉시간 2~24 min의 무촉매 반응에 대하여서는 온도와 접촉시간이 증가할수록 상기 생성물의 수율이 증가하였고 촉매 반응에 대하여서는 산촉매, 염기성촉매 및 산화환원촉매의 활성에 대하여 검토한 결과 $Cr_2O_3$ 촉매가 가장 높은 활성을 보여주었다. $Cr_2O_3$ 촉매를 사용하여 $560^{\circ}C$, 접촉시간 24 min의 조건에서 전환율 74.6%와 벤젠 0.4%, 톨루엔 21.6%, 에틸벤젠 9.7%, 스티렌 17.9%, 알파메틸스티렌 3.5%의 수율을 각각 얻을 수 있었다. 이때의 반응 메커니즘은 스티렌이 열에 의해 diradical을 경유하여 에틸벤젠이나 다른 부생성물을 생성시키는 것으로 추측된다.

새로운 적층방법으로 제조된 고품위 비정질/다결정 $BaTiO_3$ 적층박막의 특성과 교류 구동형 박막 전기 발광소자에의 응용 (Characteristics of Amorphous/Polycrystalline $BaTiO_3$ Double Layer Thin Films with High Performance Prepared New Stacking Method and its Application to AC TFEL Device)

  • 송만호;이윤희;한택상;오명환;윤기현
    • 한국세라믹학회지
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    • 제32권7호
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    • pp.761-768
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    • 1995
  • Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

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