• Progress in Superconductivity
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• 제14권1호
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• 한국재료학회지
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• 제9권10호
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• pp.1037-1040
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• 1999

열간압축 및 다이업셋한 Mischmetal-FeB-(C0,Ti,Al) 영구자석의 자기적 특성과 미세조직을 시료진동형 자력계, 투과전자 현미경, 주사전자 현미경, X-선 회절기를 이용하여 조사하였다. $\textrm{(MM)}_{12.5}\textrm{Fe}_{71.9}\textrm{Co}_{5.0}\textrm{Al}_{2.0}\textrm{B}_{8.6}$조성의 열간압축 자석은 $\textrm{H}_{c}$=4.27 kOe, $\textrm{B}_{r}$=4.75 kG, $\textrm{(BH)}_{max}$=3.82 MGOe의 특성을 보였다. 다이업셋 자석은 $\textrm{H}_{c}$=3.10 kOe, $\textrm{B}_{r}$=5.58 kG, $\textrm{(BH)}_{max}$=5.34 MGOe의 특성을 나타냈다. $\textrm{(MM)}_{12.5}\textrm{Fe}_{77.9}\textrm{Ti}_{1.0}\textrm{B}_{8.6}$ 조성의 경우, 열간압축 자석은 $\textrm{H}_{c}$=3.75 kOe, $\textrm{B}_{r}$=4.64 kG, $\textrm{(BH)}_{max}$=2.78 MGOe, 다이업셋 자석은 $\textrm{H}_{c}$=3.29 kOe, $\textrm{B}_{r}$=5.01 kG, $\textrm{(BH)}_{max}$=3.54 MGOe의 특성을 보였다. X-선 회절 및 투과전자 현미경 조사결과에 의하면, 다이업셋 자석에서 c축이 다이업셋 방향으로 놓이는 결정이방성이 나타나며, 이는 다이어셋 자석의 에너지적의 증가와 관련이 있는 것으로 보인다. Co의 Fe에 대한 일부 치환은 열간압축자석의 자기이방성을 증가시키는 것으로 나타났다.

• 대한화학회지
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• 제45권4호
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• pp.312-317
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• 2001

7'-Aldehyde-nucleoside 유사체(2a, 2c)을 6-N-benzoyl-2',3'-O-isopropylideneadenosiner과 uridine으로부터 합성하였다. 2와 Wittig reagent인 ethoxycarbonylmethylene을 축합시켜 ethoxycarbonyl group을 갖는 탄소수를 증가시킨 공액 이중 결합을 지닌 nucleosi de 유사체, ethyl-1',5',6',7',8'-pentadeoxy-1'-(adenin-9-yl)-$\beta$-D-ribo-nnona-5'(E).7'(E)-dienofuranuronate(4b), ethyl-1',5',6',7',8'-pentadeoxy-1'-(uracyl-1-yl)-$\beta$-D-ribo-nona-5'(E),7'(E)-dienofuranuronate(4c)을 얻었다. 또한 2와 CBr4, Ph3P을 반응시켜 공액 이중 결합을 지닌 9-[8',8'-dibromo-5',6',7',8'-tetradeoxy-$\beta$-D-ribo-octa-5'(E),7'(E)-diene]nucleosides (6b,6c) 유사체를 각각 합성하였다.

• 한국진공학회지
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• 제10권1호
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• pp.104-111
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• 2001

$SiH_4$, $CH_4$, $B_2H_6$ 혼합기체를 이용하여 플라즈마 화학증착법으로 비정질 탄화실리콘(a-SiC:H) 박막을 증착하였다. 기상 doping 농도를 0에서 $2.5\times10^{-2}$ 범위에서 변화시켜 얻은 박막의 물성을 SEM, XRD, Raman 분광법, FTIR, SIMS, 광흡수도와 전기전도도 분석을 통하여 살펴보았다. $B_2H_6$/($CH_4+SiH_4$) 기체유량비가 증가할수록 붕소의 도핑효율와 미세결정성은 감소하였다. 증착 중 $B_2H_6$ 기체가 첨가됨에 따라 비정질 탄화실리콘 박막의 Si-C-H 결합기의 강도는 감소하였으며, 이의 영향으로 박막내의 수소함량은 $B_2H_6/(SiH_4+CH_4$) 기체 유량비가 증가함에 따라 16.5%에서 7.5%로 단조감소하였다. $B_2H_6(CH_4+SiH_4$) 기체유량비가 증가할수록 a-SiC:H 박막의 광학적 밴드갭과 전기활성화 에너지는 감소하였고, 전기전도도는 증가하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제24권1호
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• pp.18-22
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• 2022

The effect of electron beam (EB) irradiation on superconducting properties and microstructures of MgB₂ bulk superconductors were investigated. At E-beam doses of 1×10¹⁶ e/cm² and 1×10¹⁷ e/cm², the effect of irradiation on a superconducting transition temperature (T_c) of MgB₂ was weak. As a dose increases to 5×10¹⁷ e/cm², T_c decreases by 0.5 K. The critical current density (J_c) measured at 4.2 K and 20 K, and 0 T - 5 T increases slightly as exposure time increases. X-ray diffraction for the irradiation surface of MgB₂ shows that the diffraction intensity of (hkl) peaks decreases proportionally as the exposure time increases. This indicates that the crystallinity of MgB₂ was degraded by irradiation. TEM investigation for the irradiated sample showed distorted lattice structure, which is consistent with the XRD results. The J_c increase and T_c reduction of MgB₂ by irradiation are believed to be caused by the lattice distortion.

• 한국자기학회지
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• 제7권6호
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• pp.293-298
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• 1997

기계적합금법으로 Fe$_{5}$Si$_{x}$B$_{5-x}$ 분말을 제조하고, Si 치환에 따른 합성상의 변화 및 합성분말의 자기적 성질을 XRD, TEM, Mossbauer spectroscopy, VSM 등으로 조사하였다. 각 출발 원소들은 milling 초기에 .alpha. -Fe 구조로 고용되어 비정질(amorphous) 상태로 되며, 기계적합금화가 진행됨에 따라 최종 안정상이 석출되었다. Fe$_{5}$B$_{5}$ 조성의 경우(x=0) 250시간 볼밀 처리한 후 800 .deg. C에서 2시간 열처리하면 FeB와 Fe$_{2}$B 상이 혼재된 구조가 얻어 진다. B의 일부를 Si으로 치환하면 Fe$_{2}$B 상의 생성이 억제되는 반면에 여분의 Si이 Fe$_{5}$SiB$_{2}$, Fe$_{2}$Si$_{0.4}$B$_{0.6}$ 상 및 상자성 상을 형성한다. FeB 상은 800 .deg. C에서 열처리한 후에도 결정성이 높지 않아서 넓은 범위의 초미세자장 값을 갖는 반면에, 다른 상들은 결정화가 이루어져 일정한 초미세자장 값을 보였다. 포화자화 값은 Fe$_{2}$B 상이 가장 많이 함유된 Fe$_{5}$B$_{5}$ 조성에서 가장 크게 나타났다.다.

• Bulletin of the Korean Chemical Society
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• 제22권7호
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• pp.739-742
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• 2001

Reactions of [Cp*Ir(η3-CH2CHCHPh)(NCMe)]OTf (1) with HC≡CR (R = H, CH2OH) in the presence of bases, B (B=NEt3, PPh3, AsPh3) produce stable Cp*Ir-η3-allyl-alkenyl compounds [Cp*Ir(η3-CH2CHCHPh)(-CH=CH-+B)]OTf (2) and [Cp*Ir(η3-CH2CHCHPh)(-C(CH2OH)=CH- +PPh3)]OTf (3), respectively in high yields. Cp*Ir-η3-allyl-alkynyl compounds Cp*Ir(η3-CH2CHCHPh(-C≡C-R') (4) and Cp*(η3-CH2CHCHPh)Ir-C≡C-p-C6H4-C≡C-Ir(η3-CH2CHCHPh)Cp* (5) have been prepared from reactions of 1 with HC≡CR'(R' = C6H5, p-C6H4CH3, C3H5, C6H9) and HC≡C-p-C6H4-C≡CH in the presence of NEt3.

• 전기학회논문지
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• 제57권5호
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.68-72
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• 1997

In this paper, to obtain the YbB $a_2$C $u_3$ $O_{x}$ superconductor, the mixed Powders of Y $b_2$ $O_3$, BaC $O_3$, CuO and Y $b_2$BaCu $O_{5}$, BaCu $O_2$ were used and the various calcining conditions were applied for the 123 phase of YbB $a_2$C $u_3$ $O_{x}$. Samples were prepared by the mixed oxide method and calcined with various temperatures of 88$0^{\circ}C$ ~91$0^{\circ}C$ . It was observed that the distribution of YbB $a_2$C $u_3$ $O_{x}$ phase which was calcined at 90$0^{\circ}C$ for 12 hours and 99 hours. But the result of long time calcination(99 hrs), the 123 phase of YbB $a_2$C $u_3$ $O_{x}$ was existed between 89$0^{\circ}C$ and 91$0^{\circ}C$ . And the best case could be obtained at the calcination temp. of 90$0^{\circ}C$ from the mixed Powder of YbB $a_2$C $u_3$ $O_{5}$ and Bacu $O_2$ which were prepared individually.idually.

• 대한화학회지
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• 제57권5호
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• pp.612-617
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• 2013

The versatile, hitherto unreported 3-(4-(2-phenyldiazenyl)-2-oxo-2H-chromen-3-yl)-3-oxopropanenitrile 3 was prepared by two convenient routes: either by the reaction of ethyl 4-(2-phenyldiazenyl)-2-oxo-2H-chromen-3-carboxylate 2 with acetonitrile in the presence of sodium hydride or by treatment of 4-(2-phenyldiazenyl)-3-(2-bromoacetyl)-2H-chromen-2- one 5 with potassium cyanide. Reaction of 3 with heterocyclic diazonium salts 6, 7, 14 and 17 furnished the corresponding hydrazones 8, 9, 15 and 18. The latter hydrazones underwent intramolecular cyclization into the corresponding pyrazolo[5,1- c]-1,2,4-triazine 10, 1,2,4-triazolo[5,1-c]-1,2,4-triazine 11, 1,2,4-triazino[4,3-b]indazole 16 and imidazo[2,1-c]-1,2,4-triazine 19 derivatives, respectively upon refluxing in pyridine.