• Title/Summary/Keyword: %24V_2%24%24O_5%24

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Crystal Structure of Pentapotassium Disodium Hexatungstoantimonate(V) Dodecahydrate, $K_5Na_2[SbW_6O_{24}]\cdot12H_2O$

  • Lee, Uk;Sasaki, Yukiyoshi
    • Bulletin of the Korean Chemical Society
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    • v.8 no.1
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    • pp.1-3
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    • 1987
  • The crystal structure of $K_5Na_2[SbW_6O_{24}]{\cdot}12H_2O$ has been determined. Final R = 0.081 for 890 observed independent reflections collected by diffractometry. Crystal data as follows; trigonal, space group R3m, a = 9.794(1) ${\AA},\;{\alpha}$ = 84.72$(1)^{\circ}$, Z = 1. The heteropolyanion has a structure with point symmetry $D_{3d}$ (3m), of the ideal Anderson-type heteropolyanion. The Sb-W and W-W distances are 3.259(2) and 3.259(3) ${\AA}$. Three types of W-O ($W-O_t,\;W-O_b\;and\;W-O_c$) distances are 1.73(2), 1.95(4) and 2.20(3) ${\AA}$. The Sb-O distance is 1.97(3) ${\AA}$.

A Study on the Characteristics of Dye Sensitized Solar Cells with TiO2 Thickness and Sintering Temperature (TiO2 두께 및 소성온도에 따른 염료감응 태양전지 특성에 관한 연구)

  • Lee, Young-Min;Lee, Don-Kyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.63 no.9
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    • pp.1233-1238
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    • 2014
  • In this thesis, it is investigated the characteristics of Dye Sensitized Solar Cell (DSSC) according to variation of $TiO_2$ thickness (6, 12, 18, and $24{\mu}m$) and three distinct $TiO_2$ sintering temperatures (350, 450 and $550^{\circ}C$) by XRD, SEM, I-V and UV-Vis spectrophotometer. According to sintering temperature, $TiO_2$ was transformed into the anatase structure at $350^{\circ}C$, rutile structure at $550^{\circ}C$ and further into the two structure at $450^{\circ}C$. With increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$, respectively, the irradiance rate increased in the range of 9~26 percent and 2.80~5.10 percent. Whereas a further increase to $24{\mu}m$ and $550^{\circ}C$, the irradiance rate decrease in the range of 4~11 percent and 30~47 percent. The conversion efficiency increased in the range of 2.80~5.01 and 3.03~5.01 with increasing thickness up to $18{\mu}m$ and sintering temperature up to $450^{\circ}C$. By contrast, increase to $24{\mu}m$ and $550^{\circ}C$, the conversion efficiency decreased in the range of 3.31~5.01 and 2.80~3.89, respectively. The DSSC that thickness of $TiO_2$ were $18{\mu}m$ and sintered at $450^{\circ}C$ exhibited the most excellent characteristics, in which open-circuit voltage, short-circuit current, Fill Factor and conversion efficiency are 0.69 V, $11.4mA/cm^2$, 0.64 and 5.01%, respectively.

Microwave dielectric properties of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$ ($V_2O_5$ 첨가에 따른 0.96Mg$TiO_3$-0.04Sr$TiO_3$ 세라믹스의 마이크로파 유전특성)

  • Nam, Gyu-Bin;Lee, Moon-Kee;Kim, Kang;Ryu, Ki-Won;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1485-1487
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    • 2002
  • The 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(5wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD and SEM. According to the X-ray diffraction patterns of the 0.96Mg$TiO_3$-0.04Sr$TiO_3$ceramics with $V_2O_5$(5wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase $MgTi_2O_5$ were appeared. Increasing the sintering temperature, the grain size was increased and three types of grains were exhibited: larger circular grain, small square grain and lapth-shaped grain. In the case of 0.96Mg$TiO_3$-0.04Sr$TiO_3$ ceramics with $V_2O_5$(10wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency were $15.24{\sim}18.55$, $22,890{\sim}42,100$GHz, -24.5${\sim}$+2.414ppm/$^{\circ}C$, respectively.

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Optimum Fermentation Conditions and Fermentation Characteristics of Mulberry (Morus alba) Wine (오디(Morus alba) 와인의 최적 발효조건 및 발효 특성)

  • Kim, Yong-Suk;Jeong, Do-Yeong;Shin, Dong-Hwa
    • Korean Journal of Food Science and Technology
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    • v.40 no.1
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    • pp.63-69
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    • 2008
  • For the development of mulberry wine, we investigated its optimum fermentation conditions as well as quality changes during fermentation. The physicochemical characteristics of the mulberry fruit used in the study were pH 4.56, 0.50% titratable acidity, and 13.0 $^{circ}Brix$ soluble solids. The mulberry wine fermented with Saccharomyces cerevisiae KCCM 12224 (Sc-24) at 24 $^{circ}Brix$ soluble solids and $26^{circ}C$ showed excellent characteristics in terms of ethanol production, titratable acidity, and redness. The sucrose, fructose, and glucose contents of the mulberry wine drastically decreased with fermentation time. The citric acid content was maintained during the fermentation period, and malic acid decreased, but lactic and succinic acids increased. The cyanidin-3-glucoside content, a major anthocyanin pigment, of the mulberry wine drastically decreased from 195.5 mg% at the initial stage of fermentation to 15.37 mg% at 2 days of fermentation. However, cyanidin-3-rutinoside decreased gradually. In summary, a mulberry wine of high quality was made by fermentation for 8 days at $26^{\circ}C$ using mashed mulberry fruit containing $24^{\circ}Brix$ soluble solids, after adding 200 ppm $K_2S_2O_5$ and inoculating with 3%(v/v) Sc-24.

Photoelectrochemical Converision with $SrTiO_3$ Ceramic Electrodes ($SrTiO_3$ 세라믹 전극에 의한 광전기 화학변환)

  • 윤기현;김태희
    • Journal of the Korean Ceramic Society
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    • v.22 no.3
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    • pp.19-24
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    • 1985
  • The phtoelectrochemical porperties of $Nb_2O_5$, $Sb_2O_3$ and $V_2O_5$ doped and pure $SrTiO_3$ ceramic electodes were investigated. Shapes of I-V and I-λ characteristics of the pure $SrTiO_3$ ceramic electrode are similar to those of SrTiO3 single crystal electorde ; the anodic current strats at -0.9V (vs. Ag/AgCI) in 1 N-NaOH aqueous solution and the photoresponse appears at a wavelength of about 390nm and the quantum efficiency is about 3.5% at wavelength of 390nm under 0.5V vs. Ag/AgCl. Photocurrents of $Nb_2O_5$, $Sb_2O_3$ and $V_2O_5$ doped electrodes and $V_2O_5$ doped ceramic electrode appears at wavelength of 390nm and 500nm respectively.

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Elucidation of the Inhibitory Mechanisms of Nipponoparmelia laevior Lichen Extract against Influenza A (H1N1) Virus through Proteomic Analyses

  • Cuong, Tran Van;Cho, Se-Young;Kwon, Joseph;Kim, Duwoon
    • Journal of Microbiology and Biotechnology
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    • v.29 no.7
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    • pp.1155-1164
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    • 2019
  • Lichens contain diverse bioactive secondary metabolites with various chemical and biological properties, which have been widely studied. However, details of the inhibitory mechanisms of their secondary metabolites against influenza A virus (IAV) have not been documented. Here, we investigated the antiviral effect of lichen extracts, obtained from South Korea, against IAV in MDCK cells. Of the lichens tested, Nipponoparmelia laevior (LC24) exhibited the most potent inhibitory effect against IAV infection. LC24 extract significantly increased cell viability, and reduced apoptosis in IAV-infected cells. The LC24 extract also markedly reduced (~ 3.2 log-fold) IAV mRNA expression after 48 h of infection. To understand the antiviral mechanism of LC24 against IAV, proteomic (UPLC-$HDMS^E$) analysis was performed to compare proteome modulation in IAV-infected (V) vs. mock (M) and LC24+IAV (LCV) vs. V cells. Based on Ingenuity Pathway Analysis (IPA), LC24 inhibited IAV infection by modulating several antiviral-related genes and proteins (HSPA4, HSPA5, HSPA8, ANXA1, ANXA2, $HIF-1{\alpha}$, AKT1, MX1, HNRNPH1, HNRNPDL, PDIA3, and VCP) via different signaling pathways, including $HIF-1{\alpha}$ signaling, unfolded protein response, and interferon signaling. These molecules were identified as the specific biomarkers for controlling IAV in vitro and further confirmation of their potential against IAV in vivo is required. Our findings provide a platform for further studies on the application of lichen extracts against IAV.

Piezoelectric Characteristics of Low temperature Sintering Pb0.76Ca0.24[(Mn1/3Sb2/3)0.04Ti0.96]O3 Ceramics With the Variation of Poling Field (저온소결 Pb0.76Ca0.24[(Mn1/3Sb2/3)0.04Ti0.96]O3 세라믹스의 분극전계에 따른 압전특성)

  • Chung Kwang-Hyun;Yoo Kyung-Jin;Yoo Ju-Hyun;Cho Bong-Hee;Yoon Hyun-Sang;Paik Dong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.3
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    • pp.228-232
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    • 2006
  • In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25\;wt\%\;CaCO_3$ and $0.2\;wt\%\;Li_{2}CO_3$ as sintering aids were manufactured according to the variation of poling field. The specimens could be sintered at $930\;^{\circ}C$. The piezoelectric properties were investigated according to the poling field. The maximum properties showed at the field of 6.5 kV/mm, which had kt of 0.49, Qmt of 1816, and $d_{33}$ of 81.4 pC/N.

Piezoelectric Characteristics of Low temperature sintering $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ Ceramics with the variation of Poling field (저온소결 $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ 세라믹스의 분극전계에 따른 압전특성)

  • Chung, Kwang-Hyun;Yoo, Kyung-Jin;Lee, Sang-Ho;Lee, Chang-Bae;Yoo, Ju-Hyun;Jeong, Yeong-Ho;Lee, Duck-Chool
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.176-177
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    • 2005
  • In this paper, in order to develop low temperature sintering $PbTiO_3$-system piezoelectric ceramics for thickness-vibration-mode piezoelectric transformer, $Pb_{0.76}Ca_{0.24}[(Mn_{1/3}Sb_{2/3})_{0.04}Ti_{0.96}]O_3$ ceramics using $0.25wt%CaCO_3$ and 0.2wt%$Li_2CO_3$ as sintering aids were manufactured according to the variation of poling field. Specimens could be sintered at the sintering temperature of $930^{\circ}C$. The piezoelectric properties increased according to the increase of poling field and showed the maximum values (kt=0.49, Qmt=1816, and $d_{33}$=81.4pC/N) under 6.5kV/mm.

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Varistor Characteristics of ZPCCL-Based Ceramics Doped with $La_{2}o_{3}$ ($La_{2}o_{3}$가 첨가된 ZPCCL계 세라믹스의 바리스터 특성)

  • 정영철;류정선;남춘우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.415-418
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    • 2001
  • The I-V characteristics and its stability of ZPCCL-based ceramic varistors doped with La$_2$O$_3$in the range of 0.0~4.0 mol% were investigated. The density of ceramics was increased in the range of 4.7~5.8 g/cm$^3$ with increasing La$_2$O$_3$content. As La$_2$O$_3$content is increased, the varistor voltage was decreased in the range of 503.49-9.42 V/mm up to 2.0 mol%, whereas increasing La$_2$O$_3$content further caused it to increase. The ZPCCL-based varistors were characterized by nonlinearity, in which the nonlinear exponent is in the range of 3.05~82.43 and leakage current is in the range of 0.24-100.22 $\mu$A. Among ZPCCL-based varistors, 0.5 mol% added-varistors exhibited an excellent nonlinearity, in which the nonlinear exponent is 82.43 and the leakage current is 0.24 $\mu$A. Furthermore, they exhibited a high stability, in which the variation rate of the varistor voltage and the nonlinear exponent was -1.11% and -6.72%, respectively, under DC stress, such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$//12h) +(0.90 V$_{1mA}$12$0^{\circ}C$//12h)+(0.95 V$_{1mA}$1$25^{\circ}C$//12h)+(0.95 V$_{1mA}$15$0^{\circ}C$//12h). Consequently, it was estimated that ZPCCL-based ceramics will be applied to development of Pr$_{6}$O$_{11}$ based ZnO varistors having a high performance.e.rformance.e.

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Temperature-dependent photoluminescence properties of amorphous and crystalline V2O5 films (비정질과 결정질 V2O5 박막의 온도에 따른 발광특성)

  • Kang, Manil;Chu, Minwoo;Kim, Sok Won
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.5
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    • pp.202-206
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    • 2014
  • In order to investigate the photoluminescence (PL) properties of $V_2O_5$ films, amorphous and crystalline films were prepared by using RF sputtering system, and the PL spectra of the films were measured at the temperatures ranging from 300 K to 10 K. In the amorphous $V_2O_5$ film grown at room temperature, a PL peak centered at ~505 nm was only observed, and in the crystalline $V_2O_5$ film, two peaks centered at ~505 nm and ~695 nm, which is known to correspond to oxygen defects, were revealed. The position of PL peak centered at 505 nm for both the amorphous and crystalline $V_2O_5$ films showed a strong dependence on temperature, and the positions were 2.45 eV at 300 K and 2.35 eV at 10 K, respectively. The PL at 505 nm was due to the band energy transition in $V_2O_5$, and also, the reduction of the peak position energy with decreasing temperature was caused by a decrement of the lattice dilatation effect with reducing electron-phonon interaction.