• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1274-1276
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• 1994

A study on $BaTiO_3$ ceramics have been shown that dielectric properties of $BaTiO_3$ ceramics strongly depend on the size and ferroelectric domain density of the constituting grain. According to rising substrate temperature from $25[^{\circ}C]$ to $600[^{\circ}C]$, the peak intensity and crystal plane in XRD are increased. In this study, $BaTiO_3$ thin film prepared by RF sputtering from room temperature to $600[^{\circ}C]$ of substrate temperature. Therefore, we tried to investigate the relation between the characteristics of ceramics structure and dielectric factor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.412-415
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• 2004

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as accepters and sintered $1250^{\circ}C/2hrs$. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $BaTiO_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• 한국재료학회지
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• 제18권9호
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• pp.475-481
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• 2008

Positive temperature coefficient of resistivity (PTCR) characteristics of (1-x)$BaTiO_3-x(Bi_{0.5}K_{0.5})TiO_3$ ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free PTC thermistor available at high temperatures of > $120^{\circ}C$. The PTCR characteristics appearing in the ($B_{i0.5}K_{i0.5})TiO_3$ (< 5 mol%) incorporated $BaTiO_3$ ceramics, which might be mainly due to $Bi^{+3}$ ions substituting for $Ba^{+2}$ sites. The 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics showed good PTCR characteristics of a low resistivity at room temperature (${\rho}_r$) of $31{\Omega}{\cdot}cm$ a high ${\rho}_{max}/{\rho}_{min}$ ratio of $5.38{\times}10^3$, and a high resistivity temperature factor (${\alpha}$) of $17.8%/^{\circ}C$. The addition of $Nb_2O_5$ to 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics further improved the PTCR characteristics. Especially, 0.025 mol% $Nb_2O_5$ doped 0.99$BaTiO_3-0.01(Bi_{0.5}K_{0.5})TiO_3$ ceramics exhibited a significantly increased ${\rho}_{max}/{\rho}_{min}$ ratio of $8.7{\times}10^3$ and a high ${\alpha}$ of $18.6%/^{\circ}C$, along with a high $T_c$ of $148^{\circ}C$ despite a slightly increased ${\rho}_r$ of $31{\Omega}{\cdot}cm$.

• 한국화재소방학회논문지
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• 제16권4호
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• pp.15-19
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• 2002

BaTiO$_3$계 PTC 서미스터의 조성개발을 위해 (Ba$_{0.95-x}$S $r_{0.05}$C $a_{x}$)$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$MnCO_3$-$\beta$Nb_2$o_{5}$와 같은 실험조성식을 설정한 후 최적 조건하에서 적층형 PTC시편을 제작하여 실험하였다. 실험 결과, 시편제조시의 최적 소결온도와 냉각속도는 각각 $1350^{\circ}C$-2 hour및 $100^{\circ}C$/h였다. 또한 상온저항을 낮추는 효과가 있는 Dopant로서의 Ca와 Mn 그리고 피크(peak)저항값을 높일 수 있는 Nb를 Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%로 함으로써 비교적 낮은 상온저항과 높은 피크(peak)저항 및 양호한 온도계수 특성이 나타났으며, 화재감지센서로서의 활용 가능성을 확인하였다.다.다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.91-92
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• 2007

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.13-16
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• 2017

In this study, in order to develop composition ceramics for refrigeration device application, $Ba(Ti_{0.9}Zr_{0.1})O_3$ composition was fabricated using conventional solid-state method. Electrocaloric effect of this ceramic was investigated using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $150^{\circ}C$. Curie temperature of $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics showed $80^{\circ}C$. The maximum value of ${\Delta}T=0.12^{\circ}C$ in ambient temperature of $115^{\circ}C$ under 30 kV/cm was appeared. It is concluded that $Ba(Ti_{0.9}Zr_{0.1})O_3$ ceramics can be applied as refrigeration device application.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.175-177
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• 2005

본 연구에서는 fresnoite ($Ba_{2}TiSi_{2}O_{8}$) 결정화 유리를 $xK_{2}O-(33.3-x)BaO-16.7TiO_{2}-50SiO_{2}$ ($0{\le}x{\le}\;20mol\%$)으로 부터 제조하였으며, 특성평가를 하였다. $K_{2}O$의 치환량이 증가함에 따라, 유리전이 온도와 결정화 온도는 감소하였으며, 유리의 안정화를 나타내는 ${\Delta}$T는 증가하였다. $Ba_{2}TiSi_{2}O_{8}$ 결정상의 형성은 XRD와 SEM분석을 통하여 관찰하였고, LCR meter를 사용하여 열처리에 의하여 제조된 결정화 유리의 유전율은 측정하였으며, 결정화 유리는 $Ba_{2}Si_{2}TiO_{8}$ 단결정 보다 낮은 유전율은 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.32-32
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• 2008

Microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of $0.9BaTiO_3-0.1(Bi_{0.5}Na_{0.5})TiO_3$ [BaBiNT] ceramics doped with $Nb_2O_5$ were investigated in order to develop the Pb-free high Curie temperature ($T_c$)(>$160^{\circ}C$) PTC thermistor. The BaBiNT ceramics showed a tetragonal perovskite structure, irrespective of the added amount of $Nb_2O_5$. They also have a homogeneous microstructure. The resistivity of BaBiNT ceramics was gradually decreased by doping $Nb_2O_5$, which might be due to $Nb^{+5}$ ions substituting for $Ti^{+4}$ sites. The PTCR characteristics of BaBiNT ceramics appeared when the amount of doped $Nb_2O_5$ exceeded 0.0025mol%. Moreover, the abrupt grain growth was observed for the 0.03mol% $Nb_2O_5$added BaBiNT ceramics. It showed an especially high $T_c$ of approximately $172^{\circ}C$ and good PTCR characteristics of a high $\rho_{max}/\rho_{min}$ ratio ($2.96\times10^3$), a high resistivity temperature factor (11.40/$^{\circ}C$) along with a relatively low resistivity ($3.5\times10^4\Omega{\cdot}cm$).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.790-793
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• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$ single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1 ${\mu}{\textrm}{m}$. When BaTiO$_3$is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4 $\times$ 10$^4$ A/cm$^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• Advances in materials Research
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• 제1권2호
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• pp.115-128
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• 2012

The structural and electrical properties of $(1-x)Ba(Sm_{1/2}Nb_{1/2})O_3-xBaTiO_3$; ($0{\leq}x{\leq}1$) ceramics were prepared by conventional ceramic technique at $1375^{\circ}C$/7 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were derived from the X-ray diffraction (XRD) data using FullProf software whereas crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm m. Dielectric study revealed that the compound $0.75Ba(Sm_{1/2}Nb_{1/2})O_3-0.25BaTiO_3$ is having low and ${\varepsilon}^{\prime}$ and ${\varepsilon}^{{\prime}{\prime}}$ a low $T_{CC}$ (< 5%) in the working temperature range (up to+$100^{\circ}C$) which makes this composition suitable for capacitor application and may be designated as 'Stable Low-K' Class I material as per the specifications of the Electronic Industries Association. The correlated barrier hopping model was employed to successfully explain the mechanism of charge transport in the system. The ac conductivity data were used to evaluate the density of states at Fermi level, minimum hopping length and apparent activation energy of the compounds.