• Journal of the Korean Ceramic Society
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• v.46 no.2
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• pp.189-199
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• 2009

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. $BaTiO_3$ powders were synthesized by the liquid mix method developed by Pechini, and silica coating was prepared by alkoxide hydrolysis method with TEOS and ethanol. The particle size of the $BaTiO_3$ powders was 35 nm and the thickness of the $SiO_2$ coating layer was 5 nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion by increasing electrostatic repulsion between the $BaTiO_3$ particles. Effects of MgO coating on microstructure and dielectric properties of $BaTiO_3$ have been studied compared with mechanically MgO mixed $BaTiO_3$. MgO coated $BaTiO_3$ particles were prepared by a homogeneous precipitation method using $MgCl_2\cdot 6H_2O$ and urea. MgO coated $BaTiO_3$ exhibited homogeneous microstructure compared with mixed samples. XRD analysis revealed that Mg substitution for the Ti site in the MgO mixed sample was much greater than in the coated one. Electrical properties of MgO mixed and coated $BaTiO_3$ were affected by the diffusion behavior of Mg in $BaTiO_3$ lattice.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.207-212
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• 1992

The defect structure of calcium titanates with CaO excess or $TiO_2$ excess was studied by measuring electrical conductivities as a funcition of oxygen partial pressure at $85O^{\circ}C$ to $1050^{\circ}C$. Execess CaO may divide itself equally between A and B sites, resulting in $Ca_{Ti}$" and Vo", while excess $TiO_2$ form $V_{Ca}$" and Vo". The equilibrium electrical conductivity data indicate that the solubilities of CaO and $TiO_2$ in $CaTiO_3$ are 5000ppm and 2000ppm, respectively. Oxygen vacancies contributed to the ionic conduction which flatten the conductivity minima and did not make any defect association with oppositely charged defects.ely charged defects.

• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1327-1334
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• 1999

Behaviors of abnormal expansion during calcination process of Ba2Ti9O20 ceramics and its related effects on the sintering characteristics were investigated as a function of precursors. When BaCO3 and TiO2 powders were used as starting materials. BaTi4O9 phase which has relatively large molar volume was formed drastically with abnormal ex-pansion during the calcination at 95$0^{\circ}C$ to 115$0^{\circ}C$ ON the contrary using BaTiO3 and TiO2 powders as starting materials led to retardation of the formation of BaTi4O9 phase and concurrently suppressed the abnormal expansion during cal-cination process. Especially the calcined powder of BaTiO3 and TiO2 had advantages in the densification and formation of Ba2Ti9O20 single phase in the sintering process.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.383-390
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• 2002

To investigate behaviors of Ti and O elements and microstructures of anodic titanium oxide films, the films were prepared by anodizing pure titanium in $H_2$S $O_4$, $H_3$P $O_4$, and $H_2O$$_2$ mixed solution at 180V. The microstructures and chemical states of the elements were analyzed using SEM, X-ray mapping, AFM, XRD, XPS (depth profile). The films formed on a titanium substrate showed porous layers which were composed of pore and wall, And with increasing anodizing time a hexagonal shape of cell structures were dominant and solace roughness increased. From the XRD result the structure of the Ti $O_2$ layer was anatase type of crystal on the whole. In the XPS spectra it was found that Ti and O were chemically binded in forms of Ti $O_2$, TiOH, $Ti_2$ $O_3$ at Ti 2p, and Ti $O_2$, $Ti_2$ $O_3$, $P_2$ $O_{5}$, S $O_4^{2-}$ at O ls respectively. Concentration of Ti $O_2$ decreased as the depth increased from the surface of the oxide film towards the substrate, but to the contrary concentrations of TiOH and $Ti_2$ $O_3$ increased.d.

• Journal of Magnetics
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• v.14 no.3
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• pp.120-123
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• 2009

In this study, BiFe$O_3$-BaTi$O_3$ ceramics have been fabricated by a solid-state reaction method. The effects of BaTi$O_3$ content in the (1-x)BiFe$O_3$-xBaTi$O_3$ (x = 0.1, 0.2, 0.25, 0.3, 0.4, 0.5) system on crystal structure and magnetic, dielectric, and ferroelectric properties were investigated. Perovskite BiFe$O_3$ was stabilized through the formation of a solid solution with BaTi$O_3$. Rhombohedrally distorted structure (1-x)BiFe$O_3$-xBaTi$O_3$ ceramics showed strong ferromagnetism at x = 0.5. Dielectric and ferroelectric properties of the BiFe$O_3$-BaTi$O_3$ system also changed significantly upon addition of BaTi$O_3$. It was found that the maximum dielectric and ferroelectric properties were exhibited in the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25. This suggested the morphotropic phase boundary (MPB) with the coexistence of both rhombohedral and cubic phases of the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.480-483
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• 2001

Epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films were grown at 80$0^{\circ}C$ on $Al_2$O$_3$ (1102) and LaAlO$_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films on conductive RuO$_2$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ electrodes, respectively Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO$_2$ film grown on RuO$_2$ showed a very broad peak in the visible light region. An epitaxial anatase-TiO$_2$ film grown on La$_{0.5}$Sr$_{0.5}$CoO$_3$ showed a strong peak with a threshold energy of 3.05 eV 3.05 eV

• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.1051-1054
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• 2004

The structural transformation behavior of $Na_2Ti_3O_7$ by hydrolysis was investigated in mild and strong acidic aqueous medium. Compared with $K_2Ti_4O_9,\;Na_2Ti_3O_7$ exhibits quite different structural and morphological transformation behavior despite their similar layered structural characteristics. $TiO_2(B)$ obtained by heat treatment of $H_2Ti_3O_7\;at\;350^{\circ}C$ transforms to rutile $H_2Ti_3O_7\;at\;900^{\circ}C$. This temperature is much lower than $1200{\circ}C$, the temperature for anatase to rutile transition when $K_2Ti_4O_9$ is used as a starting titanate. A rectangular rod shape and size of $TiO_2(B)$ particles obtained from $Na_2Ti_3O_7$ is also different from a fibrous structure of $TiO_2(B)$ prepared using $K_2Ti_4O_9$. Rutile crystals of 100 nm diameter with a corn-like morphology and large surface area are directly obtained when the hydrolysis of $Na_2Ti_3O_7$ is carried out at $100^{\circ}C$ in a strong acid solution. The structure of starting titanates and the hydrolysis conditions are an important factor to decide the particle size and morphology of $TiO_2(B)\;and\;TiO_2$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.51-59
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• 1998

($Na_{1/2}Ln_{1/2}$)$TiO_3$ceramics have a high relative dielectric constant and a positive temperature coefficient of resonant frequency ($\tau_f$)(where Ln represents a lanthanide: $La^{+3}$, $Pr^{+3}$, $Nd^{+3}$ and $Sm^{+3}$). On the other hand, $MgTiO_3$ ceramic has a high Qf value and a negative temperature coefficient. So We have investigated the microwave dielectric properties of $xMgTiO_3$-(1-x) ($Na_{1/2}Ln_{1/2}$)$TiO_3$. In these systems, there are no clues on solid-solution and secondary phase. There are mixed phases with $MgTiO_3$and ($Na_{1/2}Ln_{1/2}$)$TiO_3$ phases. Its dielectric characteristics (Qf, temperature coefficient and dielectric constant) are intermediate between ($Na_{1/2}Ln_{1/2}$)$TiO_3$ and $MgTiO_3$ and are predictable by the logarithmic mixing rule. The dielectric ceramic compositions temperature coefficient each approximates to zero at Ln=La, x=0.9, Ln=Pr, x=0.87, and Ln=Nd, x=0.84. At this time, there are Qf values in the range of 55,000 to 28,00GHz and relative dielectric constants in the range of 22 to 25.