• Electrical & Electronic Materials
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• v.10 no.7
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1240-1246
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• 1994

While sintering the Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 system through solid-reaction route, pyrochlore(Pb3Nb4O13) phase while reduces the dielectric constant is inevitably formed. Substitution of Pb(Mg1/3Nb2/3)O3 with PbTiO3 and BaTiO3 can retard the occurrence of pyrochlore phase. The perovskite solid-solution without containing pyrochlore phase can be obtained when we consolidated the materials consisting of PbTiO3 and BaTiO3 at 1200℃ for 2 hours. The sintered body composed of 0.8Pb(Mg1/3Nb2/3)O3-0.1PbTiO3-0.1BaTiO3 composition showed the diffused phase transition(DPT) phenomena and the maximum value of dielectric constant at 0℃ (Tc') with the value of 1.3×104.

• Journal of the Korean Ceramic Society
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• v.32 no.7
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• pp.761-768
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• 1995

Double layered BaTiO3 thin films with high dielectric constant as well as good insulating property were prepared for the application to low voltage driving thin film electroluminescent (TFEL) device. BaTiO3 thin films were formed by rf-magnetron sputtering technique. Amorphous and polycrystalline BaTiO3 thin films were deposited at the substrate temperatures of room temperature and 55$0^{\circ}C$, respectively. Two kinds of films prepared under these conditions showed high resistivity and high dielectric constant. The figure of merit (=$\varepsilon$r$\times$Eb.d) of polycrystalline BaTiO3 thin film was very high (8.43$\mu$C/$\textrm{cm}^2$). The polycrystalline BaTiO3 showed a substantial amount of leakage current (I), under the high electric field above 0.5 MV/cm. The double layered BaTiO3 thin film, i.e., amorphous BaTiO3 layer coated polycrystalline BaTiO3 thin film, was prepared by the new stacking method and showed very good dielectric and insulating properties. It showed a high dielectric constant fo 95 and leakage current density of 25 nA/$\textrm{cm}^2$ (0.3MV/cm) with the figure of merit of 20$\mu$C/$\textrm{cm}^2$. The leakage current density in the double layered BaTiO3 was much smaller than that in polycrystalline BaTiO3 under the high electric field. The saturated brightness of the devices using double layered BaTiO3 was about 220cd/$m^2$. Threshold voltage of TFEL devices fabricated on double layered BaTiO3 decreased by 50V compared to the EL devices fabricated on amorphous BaTiO3.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.364-371
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• 1998

A novel antifuse has been developed for field programmable gate arrays (FPGA's) as a voltage programmable link with Al/$BaTiO_3/SiO_2$/TiW-silicide. The proper program voltage can be obtained by adjusting the deposition thickness of $BaTiO_3$ film. When a negative voltage was applied at bottom TiW-silicide electrode of the antifuse, based on $BaTiO_3(120{\AA})$/$SiO_2(120{\AA})$, the program voltage was about l4.4V and on-resistances were ranged between 40 and $50{\Omega}$. The current-voltage characteristics of antifuses are consistent with a Frenkel-Poole conduction model. However, there are some deviations depending on bias polarity that are probably due to the difference in the interface properties between Al/$BaTiO_3$ and TiW-silicide/$SiO_2$.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.373-379
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• 1997

A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.567-572
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• 1998

The crystalline structure of $LaTi_{0.8}V_{0.2}O_3$ solid solutions, prepared by arc-melting palletized mixtures of predried $La_2O_3,\;V_2O_3,\;TiO_2$, and Ti, was investigated by transmission electron microscopy and computer image simulation. Computer image simulations were performed by the multislice method for a wide range of sample thickness and defocusing value. The structure of $LaTi_{0.8}V_{0.2}O_3$ was determined as a $GdFeO_3$-type orthorhombic $(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$ with a space group $P_{nma-}$. No evidence of ordering of Ti and V atoms in $SaTi_{0.8}V_{0.2}O_3$ was found.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.57-59
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

• Korean Journal of Crystallography
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• v.10 no.1
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• pp.56-65
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• 1999

수열법을 이용하여 미세한 BaTiO3 분말을 합성하였다. Ti원으로 두 종류의 TiO2 gel을 사용하였으며 그 크기와 모양을 BaTiO3 합성에 주는 영향을 고찰하였다. 구형의 단분산 TiO2 gel을 사용하여 Ba(NO3)2 수용액에서 수열 합성한 BaTiO3 분말은 입자크기도 균일하였으며 응집이 일어나지 않아않았다. 비교적 낮은 pH에서 구형 TiO2 gel을 사용하여 합성한 BaTiO3 분말은 구형을 그대로 유지하였지만 높은 pH에서 합성한 BaTiO3 분말은 그 구형이 분해되었다. KOH양이 많아지고, 합성시간이 길어짐에 따라 합성된 BaTiO3 분말의 크기는 커졌으며 그 c/a 값도 증가하였다.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.803-809
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were characterized and measured in this study. The basic composition of the BaTiO3 cremics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Samples of the BaTiO3 ceramics were prepared by adding various amounts of the TiO2, SiO2 and Al2O3 to the basic composition. An addition of 1 mol% TiO2, 2 mol% SiO2 and 0.5 mol% Al2O3 to the basic composition resulted both the values of the room temperature resistivity and the temperatured coefficient being maxium. Meanwhile, an addition of 1 mol% TiO2 and 1 mol% Al2O3 to the basic composition resulted the value of the room temperature resistivity maxium and the temperature coefficient minimum. The temperature coefficient showed a maximum value as well as a minimum value when the three kinds of the additives were added together to the basic composition of the BaTiO3 ceramics. Maxed phases of BaTi3O7, BaTiSiO5 and BaAl2Si2O8 were present at the grain boundary.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.582-586
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• 1995

The crystal structures of (Na0.3Sr0.7)(Ti0.7M0.3)O3 (M=Ta, Nb) compounds were determined using the Rietveld method. Due to the tilting of a oxygen octahedron, (Na0.3Sr0.7)(Ti0.7Nb0.3)O3 had a superlattice of doubled a, b and c of simple perovskite. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was tetragonal with a space group 14/mmm. The crystal structure of (Na0.3Sr0.7)(Ti0.7M0.3)O3 was a cubic with space group Pm3m, in which no tilting of oxygen octahedron was observed. The difference in the oxygen tilting of these two materials was due to the larger covalency of Nb-O bond than that of Ta-O bond, which induced a strong $\pi$Nb0 bonding in (Na0.3Sr0.7)(Ti0.7M0.3)O3. Therefore, the higher transition temperature of (Na0.3Sr0.7)(Ti0.7M0.3)O3 could be related to the larger tilting of oxygen octahedron.