• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.44-47
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• 1995

In this study, dielectric and piezoelectric properties of 0.4[0.1Bi(Ni$\_$1/2/Ti$\_$1/2/)O$_3$0.9Pb(Ni$\_$1/3/Nb$\_$2/3/)O$_3$]-0.6(PbZr$\_$y/Ti$\_$1-y/)O$_3$ceramics with Zr/Ti ratio were observed. As a results, structure of the ceramics with ZrO$_2$(y) 0.425 and 0.45 was MPB. Electromechanical coupling coefficients k$\_$p/, k$\_$31/ of the BN$\_$162/ specimen were 57.2%, 35.6% and piezoelectric constants d$\_$33/, d$\_$31/ were 720, 298[x10$\_$-12/C/N).

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.806-812
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• 2008

The ammonia decomposition reaction has been of increasing interest as a means of treating ammonia in flue gas in the presence of precious metal catalyst. Various catalysts, $Pt-Rh/Al_2O_3$, $Pt-Rh/TiO_2$, $Pt-Rh/ZrO_2$, $Pt-Pd/Al_2O_3$, $Pd-Rh/Al_2O_3$, $Pd-Rh/TiO_2$, $Pd-Rh/ZrO_2$, $Pt-Pd-Rh/Al_2O_3$, $Pd/Ga-Al_2O_3$, $Rh/Ga-Al_2O_3$, and Ru/Ga-$Al_2O_3$, were synthesized by using excess wet impregnation method. Using a homemade 1/4" reactor at $10,000{\sim}50,000hr^{-1}$ of space velocity in the presence of precious metal catalyst ammonia decomposition reactions were carried out to investigate the catalyst activity. The inlet ammonia concentration was maintained at 2,000 ppm, with an air balance. Both $T_{50}$ and $T_{90}$, defined as the temperatures where 50% and 90% of ammonia, respectively, are converted, decreased significantly when alumina-supported catalysts were applied. In terms of catalytic performance on the ammonia conversion in the presence of hydrogen sulfide, $Pt-Rh/Al_2O_3$ catalyst showed no effect on the poisoning caused by hydrogen sulfide. These results indicate that platinum-rhodium bimetallic catalyst is a useful catalyst for ammonia decomposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.607-610
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• 2004

The Pb $(Zr_{0.52}Ti_{0.48})O_3/(Ba_{0.6}Sr_{0.4}TiO_3$ [PZT(52/48)/BST(60/40)] heterolayered thin films were fabricated on the Pt/Ti/$SiO_2$/Si by RF sputtering method. The structural properties of the PZT(52/48)/BST(60/40) heterolayered thin films were investigated with Ar/$O_2$ ratio condition. All the PZT(52/48)/BST(60/40) heterolayered thin films had shown the PZT(111), (200) and BST(200) Peaks of the tetragonal structure. Increasing the Ar/$O_2$ ratio, the average roughness was increased. The thickness ratio of the to the PZT and BST thin film was 1:2. In the case of the PZT(52/48)/BST(60/40) heterolayered thin films with Ar/$O_2$ ratio of 80/20, the average roughness was 3.4 [nm].

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.933-941
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• 1996

In this study, the Tx(Transmitting) and Rx(Receiving) band pass filter for personal communication services was constructed and designed using .lambda./4 TEM mode dielectric resonators. Band pass filter was composed of ceramics resonators which has been developed using ($Zr_{0.65}$,$Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramic and Unloaded-Q ( $Q_{o}$) of .lambda./4 TEM mode dielectric resonator with inner hole size 0.9mm and external size 3mm using silver electrode is 354.5 at 1.95GHz. For the band pass filter design and construction, the design theory and simulation results of band pass filter using J-inverter theory have been studied. The parameters which are evaluated by design theory are practically applied to the filter construction and the simulation results are in agreement with the measured results after fine tunnings.s.s.s.s.s.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.55-56
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• 2006

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. BST ($Ba_{0.6}Sr_{0.4}TiO_3$), PZT ($Pb_{1.1}(Zr_{0.52}TiO_{0.48})O_3$) and BTO ($BaTiO_3$) ferroelectric film are fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of BST, PZT, BTO films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.177-179
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• 2004

$Pb(Zr_{0.4},Ti_{0.6})O3$, $Pb(Zr_{0.6},Ti_{0.4})O_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $100{\sim}120{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$ were approximately 676 and 1.4%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.60-63
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• 1997

Dieletric ailed piezoelectric properties of Pb[$Zr_{0.45}$/ $Ti_{0.5-x}$/L $u_{x}$ (M $n_{1}$3//S $b_{2}$3)$_{0.05}$] $O_3$(0$\leq$x $\leq$0.03) were investigated. The partial substitution of $Ti^{4+}$ by a L $u^{3+}$ permitted improvement of the piezoelectric constant( $d_{33}$ ), electromechanical coupling factor ( $k_{p}$ ) and dielectric constant($\varepsilon$$_{33}$ /Sup T/). The dielectric loss(tan $\delta$ ) increased and mechanical quality factor(Qm) decreased with an increase of x were observed. A new piezoelectric material for actuator application was developed at x=0.02 with $d_{33}$ =370$\times$10$^{-2}$ /C/N, $k_{p}$ =58.5%, $\varepsilon$$_{33}$ $^{T}$ =1321, $Q_{m}$ =714 and tan $\delta$ =0.98%.%..%.%.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.24-28
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• 2003

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184％ and 15.62%, respectively.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.53.1-53.1
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• 2000