• Journal of Electrical Engineering and Technology
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• 제8권6호
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• pp.1474-1480
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• 2013

Silicon carbide (SiC)-zirconium diboride ($ZrB_2$) composites were prepared by subjecting a 60:40 vol% mixture of ${\beta}$-SiC powder and $ZrB_2$ matrix to spark plasma sintering (SPS) in 15 $mm{\Phi}$ and 20 $mm{\Phi}$ molds. The 15 $mm{\Phi}$ and 20 $mm{\Phi}$ compacts were sintered for 60 sec at $1500^{\circ}C$ under a uniaxial pressure of 50 MPa and argon atmosphere. Similar composites were simulated using $Flux^{(R)}$ 3D computer simulation software. The current and power densities of the specimen sections of the simulated SiC-$ZrB_2$ composites were higher than those of the mold sections of the 15 $mm{\Phi}$ and 20 $mm{\Phi}$ mold simulated specimens. Toward the centers of the specimen sections, the current densities in the simulated SiC-$ZrB_2$ composites increased. The power density patterns of the specimen sections of the simulated SiC-$ZrB_2$ composites were nearly identical to their current density patterns. The current densities of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composites were higher than those of the 20 $mm{\Phi}$ mold in the center of the specimen section. The volume electrical resistivity of the simulated SiC-$ZrB_2$ composite was about 7.72 times lower than those of the graphite mold and the punch section. The power density, 1.4604 $GW/m^3$, of the 15 $mm{\Phi}$ mold of the simulated SiC-$ZrB_2$ composite was higher than that of the 20 $mm{\Phi}$ mold, 1.3832 $GW/m^3$. The $ZrB_2$ distributions in the 20 $mm{\Phi}$ mold in the sintered SiC-$ZrB_2$ composites were more uniform than those of the 15 $mm{\Phi}$ mold on the basis of energy-dispersive spectroscopy (EDS) mapping. The volume electrical resistivity of the 20 $mm{\Phi}$ mold of the sintered SiC-$ZrB_2$ composite, $6.17{\times}10^{-4}{\Omega}cm$, was lower than that of the 15 $mm{\Phi}$ mold, $9.37{\times}10^{-4}{\Omega}{\cdot}cm$, at room temperature.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.65.1-65
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• 2003

The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi$\sub$x/O$\sub$y. with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y//Si sample is thermally stable up to 880$^{\circ}C$, but is less stable compared to the ZrO$_2$/SiO$_2$/Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO$_2$/ZrSi$\sub$x/O$\sub$y/Si to 925$^{\circ}C$, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of∼13 nm with a dielectric constant of ∼21 and a leakage current of 3.2${\times}$10e-3 A/$\textrm{cm}^2$ at 1.5V. Upon oxygen or ammonia annealing, the formation of SiO$\sub$x/ and SiH$\sub$x/N$\sub$y/O$\sub$z/ at the interface reduced the overall dielectric constants.

• 한국재료학회지
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• 제13권9호
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• pp.572-580
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• 2003

Synthesizing behavior and microstructural evolution of $CaZrO_3$and $m-ZrO_2$in a thermal reaction process of $ZrSiO_4$-$xCaCO_3$mixtures, where x is 7 and 19, were investigated to determine the addition amount of CaO in CaO:$ZrO_2$:$SiO_2$ternary composition. CaZrO$_3$-Ca$_2$SiO$_4$precursor prepared by the mixture of $ZrSiO_4$and CaCO$_3$in aqueous suspending media was controlled to the acidic (pH=4.0) condition with HCI solution to enhance the thermal reaction. The addition amount of dispersant into the $ZrSiO_4$-$xCaCO_3$slip increased with increasing mole ratio of $CaCO_3$, which was associated with the viscosity of slip. Decarbonation reaction was activated with an increase of the addition amount of $CaCO_3$, showing different final temperatures in $ZrSiO_4$-$7CaCO_3$and $ZrSiO_4$-$19CaCO_3$mixtures as about 980 and 116$0^{\circ}C$, respectively, for finishing decarbonation reaction. The grain morphology was changed to spherical shape for all samples with an increase of sintering temperature. The grain size and phase composition of the synthesized composites depended on the mixture ratio of Zrsi04 and CacO3 powders, indicating that the main crystals were m-ZrO2 ($\leq$3 $\mu\textrm{m}$) and $CaZrO_3$ ($\leq$ 7 $\mu\textrm{m}$) in $ZrSiO_4$$>-7CaCO_3$and $ZrSiO_4$-$19CaCO_3$mixtures, respectively.

• Journal of Mechanical Science and Technology
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• 제14권8호
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• pp.830-835
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• 2000

The thermodynamical estimation of the interfacial reaction and the impact properties of $Nb/MoSi_2$ laminate composites containing SiC, $NbSi_2$ or $ZrO_2$ particles are investigated. Laminate composites, which comprise alternating layers of $MoSi_2$ with the particle and Nb foil, were fabricated by the hot press process. It is clearly found out that the interfacial reaction of $Nb/MoSi_2$ can be controlled by the addition of $ZrO_2$ particle to the $MoSi_2$ phase. The addition of $ZrO_2$ particle increases both the impact value and the sintered density of Nb/McSij, The suppression of the interfacial reaction is caused by the formation of $ZrSiO_2$ in $MoSi_2-ZrO_2$ matrix mixture.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.191-193
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC-39vol.% $TiB_2$ and using 61vol.% SiC-39vol.% $ZrB_2$ powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the SiC-$TiB_2$, and SiC-$ZrB_2$ composites. The ${\beta}\;{\alpha}$-SiC phase transformation was occurred on the $SiC-TiB_2$, $SiC-ZrB_2$ composites. The relative density, the flexural strength and Young's modulus showed respectively value of 98.57%, 226.06Mpa and $86.37{\times}10^3Mpa$ in SiC-$ZrB_2$ composites.

• 한국주조공학회지
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• 제23권5호
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• pp.286-290
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• 2003

본 연구에서는 Ni-Zr-Ti의 3원계 합금을 기본으로 하여, Si 및 Sn 등의 원소를 첨가하여 Ni-rich 영역에서 벌크 비정질 합금을 제조하였다. $Ni_{59}Zr_{20}Ti_{16}Si_2Sn_3$ 조성의 합금에서 injection casting에 의하여 약 58 K의 과냉각액상영역을 가지고 있는 직경 3 mm의 벌크 비정질 시편을 제조하였다. 이러한 우수한 비정질 형성능은 액상온도의 저하로 인해 낮은 온도까지 액상이 쉽게 과냉되기 때문인 것으로 사료된다. $Ni_{59}Zr_{20}Ti_{16}Si_5$ 합금은 두 단계에 걸쳐 결정화가 일어나는 반면, $Ni_{59}Zr_{20}Ti_{16}Si_2Sn_3$ 합금은 단일 단계에 의해 orthorhombic $Ni_{10}{(Zr,Ti)}_7$ 결정상과 cubic NiTi 결정상으로 결정화가 일어난다. 벌크 비정질 $Ni_{59}Zr_{20}Ti_{16}Si_2Sn_3$ 합금의 경우 압충강도는 2.7 GPa, 연신율은 약 2% 정도의 값을 가진다.

• 한국재료학회지
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• 제6권7호
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• pp.709-715
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• 1996

${Ti}_{5}{Si}_{3}$와 ${Ti}_{5}{Si}_{3}-{ZrO}_{2}$ 복합재료의 연소합성에 미치는 전기장의 영향에 관하여 연구하였다. 45mole% 이상 첨가한 ${Ti}_{5}{Si}_{3}-{ZrO}_{2}$ 복합재료는 전기장하에서만 연소합성할 수 있었다. ${Ti}_{5}{Si}_{3}$-45mole% ${ZrO}_{2}$와 Ti5Si3-60mole% ${ZrO}_{2}$ 복합재료는 전기장을 가하지 않은 상태에서는 불안정한 연소파가 전파되었지만 반응은 완전히 일어나지 않았다 즉, 불안정한 연소파는 시편의 중앙 부근까지 전파 된 후 멈추었다. ${Ti}_{5}{Si}_{3}$-ZrO2 복합재료의 연소파 속도는 시편에 가해준 전기장에 의해 약간 증가하였다.

• International Journal of Ocean System Engineering
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• 제2권4호
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• pp.244-249
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• 2012

In this study, a monolithic MoSi2 matrix reinforced with 20 vol% SiC particles, a SiC/MoSi2 composite matrix reinforced with 20 vol% ZrO2 particles, and a ZrO2/MoSi2 composite were fabricated using hot press sintering at $1350^{\circ}C$ for 1 h under a pressure of 30 MPa. The Vickers hardness and sliding wear resistance of the monolithic MoSi2, ZrO2/MoSi2, and SiC/MoSi2 composite were investigated at room temperature. A wear behavior test was carried out using a disk-type wear tester with a silicon nitride ball. The ZrO2/MoSi2 composite showed an average Vickers hardness value and excellent wear resistance compared with the monolithic MoSi2 and SiC/MoSi2 composite at room temperature.

• 한국세라믹학회지
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• 제23권4호
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• pp.23-26
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• 1986

The synthetic conditions of $ ZrSiO_4-Cd(S_xS_{1-x})$ stains from CdS, Se, $SiO_2$ , 4ZrO_2$ and Lif were investigated and the colors were examined. Colors of the stains prepared were yellow orange red pink ruby and violet in relation to both the content of CdS-Se in $ZrSiO_4$ and firing temperature. Colors of these series stains were thermally stabilized probably by the structural stability of zirconium silicate. Furthermore by the result of X-ray diffraction analysis it is assumed that color of the zircon cadmium sulphoselenide $ ZrSiO_4-Cd(S_xS_{1-x})$ stain is developed by neither the coloring ions in $ZrSiO_4$ lattice nor the solid solution of $ZrSiO_4$ and $Cd(S_xS_{1-x})$ but by the small crystals of $Cd(S_xS_{1-x})$ being occluded by the zirconium silicate during sintering process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.172-173
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• 2006

Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.