• Korean Journal of Materials Research
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• v.27 no.1
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• pp.12-18
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• 2017

Transparent organic-inorganic hybrid hard coating films were prepared by the addition of $SiO_2$ or $ZrO_2$, as an inorganic filler to improve the hardness property, filler was highly dispersed in the acrylic resin. To improve the compatibility in the acrylic resin, $SiO_2$ or $ZrO_2$ is surface-modified using various silanes with variation of the modification time and silane content. Depending on the content and kind of the modified inorganic oxide, transparent modified inorganic sols were formulated in acryl resin. Then, the sols were bar coated and cured on PET films to investigate the optical and mechanical properties. The optimized film, which has a modified $ZrO_2$ content of 4 wt% markedly improved in terms of the hardness, haze, and transparency as compared to neat acrylate resin and acrylate resin containing modified $SiO_2$ content of 8 wt%. Meanwhile, the low transparency and high haze of these films slowly appeared at $SiO_2$ content above 10 wt% and $ZrO_2$ content of 5 wt%, but the hardness values were maintained at 2H and 3H, respectively, in comparison with the HB of neat acrylate resin.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.190-195
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• 1995

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.742-749
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• 2002

The PZT thin films werre deposited on Pt/Ti/$SiO_2$/Si substrate by R. F. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target. When interlayers(PbO, $TiO_2$, PbO/$TiO_2$) were inserted between PZT and Pt, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. Compared to the pure PZT thin films, dielectric constant, dielectric loss and polarization properties of PZT thin films with interlayers were considerably improved. From XPS depth profile analysis, it was confirmed that PZT thin films and interlayers existed independently. In particular, PZT thin films deposited on interlayer(PbO/$TiO_2$) showed the best dielectric property (${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$).

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.93-100
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• 1992

Sinterability, mechanical and electrical properties of yttria-stabilized zirconia(92 mole% $ZrO_{2}$+8 mole% $Y_{2}O_{3}$) doped with 0.5 mole% $SiO_{2}$ and $0{\sim}2.0 mole%{\;}Al_{2}O_{3}$ were studied as a function of $Al_{2}O_{3}$ addition. Sintered density increased with increasing $Al_{2}O_{3}$ addition up to 0.5 mole % but leveled off with further addition. Victors hardness is proportional to sintered density. The specimen with 0.5 mole% $Al_{2}O_{3}$ and 0.5 mole% $SiO_{2}$ exhibited the maximum electrical conductivity and revealed a maximum electromotive force for a given oxygen partial pressure. Experimental voltage curve of this oxygen sensor take on a sharper, more steplike transition at the stoichiometric A/F ratio than those of other commercial oxygen sensors.

• Korean Journal of Materials Research
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• v.7 no.10
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• pp.898-907
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• 1997

Fe-22Cr-5AI-X(X=Zr, Y)합금을 1143K, 고온 황화(P$s_{2}$=1.11x$10^{-7}$atm, P$O_{s}$ =3.11x$10^{-20atm}$) 및 황화/산화 (P$s_{2}$=8.31x$10^{-8}$atm, P$O_{s}$ =3.31x$10^{-18atm}$) 환경의 복합가스 분위기에서 1-30시간동안 노출하여 합금표면에 형성된 부식층을 관찰하여 SEM/EDS로 분석하였다. Fe-22Cr-5AI합금은 고온 부식환경에서 부식 생성물의 성장은 포물선법칙을 따르고 주요 성분은 결함이 많고 다공질인 철과 크롬의 황화물[(Fe, Cr)Sx]이므로 고온 내식성이 감소하였다. Zr을 1wt%첨가한 Fe-22Cr-5AI합금의 고온 부식거동은 Y을 1wt%첨가한 합금과 비슷한 거동을 나타내었다. 황화환경에서는 Cr의 선택 황화에 의한 크롬 황화물(CrS)이 생성되고 노출시간의 경과에 따라 (Fe, Cr)Sx나 (Cr, Fe)Sx 등의 황화물의 성장으로 고온 내식성이 감소하였다. 그러나 황화/산화환경에서는 초기에는 알루미늄산화물(A $I_{2}$ $O_{3}$)및 지르코늄산화물(Zr $O_{2}$)등이 생성되어 보호적이었으나 15시간이후 부터 (Fe, Cr)Sx나 (Cr, Fe)Sx 의 황화물의 성장으로 고온 내식성이 감소하였다.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.653-658
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• 1998

ZrO2, B2O3 및 AI을 사용하여 SHS법에 의한 붕화지르코늄을 합성을 하고 산화철과 알루미늄 분말의 첨가가 합성물의 치밀화에 미치는 영향에 대하여 검토하였다. 합성물중에 존재하는 결정상은 대부분이 ZrB2와 $\alpha$-AI2O3상이었다. 산화붕소와 알루미늄의 몰비가 1.0:3.3이상일 때 합성물의 치밀화는 크게 증가하였고, ZrB2 입자도$\alpha$-AI2O3용융상과 더불어 조대하였다. 산화철 1목에 대하여 알루미늄을 1-3몰을 첨가한 것과 산화철 1.5몰에 대하여 알루미늄을 3몰 첨가시 $\alpha$-AI2O3를 중심으로하는 슬라그상으로부터 용융상의 분이가 가능하였고, 이들 용융상에 존재하는 결정상은 ZrB2이외에 Fe, Fe2B, Zr2Fe상이었다. 용융상의 상대밀도는 산화철 1몰에 대하여 알루미늄을 1몰 첨가시 83.2%인 반면에 그 이상의 첨가량에 대해서는 치밀화는 크게 증가하여 알루미늄을 3몰 첨가한 경우 상대밀도는 93.7%로서 최대를 나타내었다.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.607-611
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• 2000

Zr modified $(Ba_{1-x},Sr_x)TiO_3$ thin films as capacitor for high density DRAM were deposited by r.f. magnetron sputtering. The films deposited at various chamber pressure exhibited a polycrystalline structure. The Zr/Ti ratio of the films increased significantly with decreasing the chamber pressure and this variation affected the microstructure and surface roughness of films When chamber pressure increased dielectric constant of the films effected due to decrease of Zr. The thin films prepared in this study show dielectric constant of 380 to 525 at 100KHz. The variation of capacitance and polarization measured as a function of bias voltage suggested that all films were paraelectric phases. Leakage current exhibited smaller value as chamber pressure decrease and the leakage current density of the films deposited above 10mTorr was $10^{-7}~10^{-8}A/cm^2$ order at 200kV/cm. $(Ba_{1-x},Sr_x)(Ti_{1-y},Zr_y)O_3$ thin films in this study appeared to be potential thin film capacitor for high density DRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.138-141
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• 2004

[ $MnO_2$ ]가 첨가된 $0.9Pb(Zr_{0.5}Ti_{0.5})O_3-0.2Pb[(Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3}]O_3$(0.8PZT-0.2PZNN) 세라믹스는 그 압전특성과 유전특성이 뛰어나지만 $1000^{\circ}C$ 이하의 낮은 소결 온도에서는 소결되지 않는다. $1000^{\circ}C$이하의 낮은 소결온도에서 소결하기 위해 CuO를 첨가한 결과, 소결온도 $920^{\circ}C$에서 소결성은 우수하였으나 그 압전 특성의 저하가 두드러졌다. 이는 XRD에서 확인한 결과에 따르면 CuO의 첨가가 우수한 MPB 조성으로 판명된 $MnO_2$ 가 첨가된 0.8PZT-0.2PZNN 세라믹스의 결정구조를 Rhombohedral 구조로 바꾸기 때문인 것으로 보였으며 이러한 문제는 PZNN의 비율을 조절하여 0.875PZT-0.125PZNN 세라믹스를 선택함으로 인해 해결할 수 있었다. 그러나 여전히 낮은 $Q_m$값을 높이기 위해서 $Al_2O_3$를 첨가하였고 그 결과 시편의 tetragonality 감소와 $Q_m$값의 증가를 확인할 수 있었으나 그 첨가량이 0.2wt% 이상일 경우에는 밀도의 감소로 인한 압전특성의 저하가 나타났다. 밀도의 향상을 위해 Zn and Ni excess 조성을 선택하였고 그 결과 0.5wt% $MnO_2$와 0.2wt% CuO 그리고 0.3wt% $Al_2O_3$를 첨가한 0.875PZT-0.125PZNN 세라믹스(Zn and Ni excess 조성)를 $920^{\circ}C$에서 소결한 경우 $k_p=0.581,\;Q_m=809,\;d_{33}=345\;pC/N\;and\;{\varepsilon}_{33}/{\varepsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1119-1121
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• 1993

The PSN-PT-PZ ceramics doped with the Mn-oxide(0.5wt%) were fabricated by the mixed oxide method at 1250($^{\circ}C$) for 2(hr) and then the dielectric and pyroelectric properties were investigated with the compositions. In the 0.05PSN-0.4PT-0.55PZ specimen with 0.5(wt%) $MnO_2$, the pyroelectric coefficient was $6.6{\times}10^{-8}(C/Cm^2^{\circ}C)$, and the figure of merits for pyroelectric current and voltage were $27{\times}10^{-9},\;45{\times}10^{-12}$(C.Cm/J), respectibly.

• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.93-96
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• 2001

The Y- or Yb-doped SrZrO$_3$ proton conductors were fabricated using the powders prepared by the self-propagating high-temperature synthesis (SHS). The electrical conductivity was evaluated from an a.c. impedance measurements. The conductivity of SrZr$_{0.92}$Yb$_{0.08}$O$_{3-\delta}$ was 1.8$\times$10$^{-3}$ Scm$^{-1}$ at $900^{\circ}C$ in dry air atmosphere and its activation energy was 0.50 eV. The conductivity in wet air was larger, compared with the dry air, and the activaton energy of SrZr$_{0.92}$Yb$_{0.08}$O$_{3-\delta}$ in wet air was 0.40 eV.