• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.59-62
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• 1996

The effect of NiO addition on the microstructure and microwave dielectric properties of (Zr$_{0.8}$Sn$_{0.2}$)TiO$_4$(ZST) was investigated. With the NiO addition, a dense ZST body of density higher than 95% has been achieved in the sintering temperature range of 1400 to 150$0^{\circ}C$. Energy dispersive X-ray spectrometry (EDS) analysis of sintered specimen shows the presence of second phase at grain boundaries, which is considered to be NiTiO$_3$. Dielectric constant of the specimen is found to increase linearly with density. Q-values and TC$_{f}$decrease with increasing NiO content. The variation of dielectric properties with NiO content is discussed in term of the second phase. The ZST ceramics with small amount of additive gave $\varepsilon$$_{r}$=38, Q=7000 at 7 GHz and TC$_{f}$=-0.5 ppm/$^{\circ}C$, comparable with the values obtained by previous investigation.stigation.

• Journal of the Korean Ceramic Society
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• v.42 no.9 s.280
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.4
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• pp.131-135
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• 2020

Single crystal phased CaZrO₃ : Eu³⁺ phosphor have been synthesized by skull melting method. The crystal structure, morphology and optical properties of synthesized phosphor were investigated XRD (X-ray diffraction), SEM (scanning electron microscopy), UV (ultraviolet) fluorescence reaction and PL (photo luminescence). The starting materials having chemical composition of CaO: ZrO₂ : Eu₂O₃= 0.962 : 1.013 : 0.025 mol% were charged into a cold crucible. The cold crucible was 120 mm in inner diameter and 150 mm in inner height, and 3 kg of mixed powder (CaO, ZrO₂ and Eu₂O₃) was completely melted within 1 hour at an oscillation frequency of 3.4 MHz, maintained in the molten state for 2 hours, and finally air-cooled. The XRD results show that synthesized phosphor is stabilized in orthorhombic perovskite structure without any impurity phases. The synthesized phosphor could be excited by UV light (254 or 365 nm) and the emission spectra results indicated that bright red luminescence of CaZrO₃ : Eu³⁺ due to magnetic dipole transition ⁵D₀→⁷F₂ at 615 nm was dominant.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.34-34
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• 2003

Piezoelectric or magnetostrictive materials, known as smart materials, have been researched widely for sensors or actuators in micro system technology. In our research, thick sol-gel lead zirconate titanate(Pb(Zr$\sub$1-x/Ti$\sub$x/)O$_3$) films were fabricated and their characteristics were investigated f3r angular rate sensor applications. The thickness of the PZT films is 1.5${\mu}$m, which is required by a vibration angular rate sensor for a good actuation and sensing. The remnant polarization of the PZT flms is 12.0 ${\mu}$C/$\textrm{cm}^2$. The electromechanical constants of PZT thin film showed the value of susceptance(B) of 4800${\mu}$ s at capacitance of 790pF. The PZT films were applied to the vibration angular rate sensor structure and the vibration of 1.78 ${\mu}$m in amplitude at the resonant frequency of 35.8㎑ was obtained by driving voltage of 5V$\sub$p-p/ of bulk piezoelectric materials with out of phase signal through voltage and inverting amplifier.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.140-144
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• 2014

Co-(0.7 wt%) and Pr-(2.0, 3.5 or 5.0 wt%) doped cubic zirconia ($ZrO_2:Y_2O_3=50:50wt%$) single crystals grown by a skull melting method were heat-treated in $N_2$ at $1150^{\circ}C$ for 5 hrs. The brown colored as-grown single crystals were changed into either dark brownish green, greenish blue and light green color after the heat treatment. Before and after the heat treatment, the YSZ (yttria-stabilized zirconia) single crystals were cut for wafer form (${\phi}7.5mm{\times}t3mm$). The optical and structural properties were examined by UV-VIS spectrophotometer and X-ray diffraction. Absorption by $Co^{2+}$(${\fallingdotseq}589nm$: ${\Gamma}_8[^4A_2(^4F)]{\rightarrow}{\Gamma}_8+{\Gamma}_7[^4T_1(^4F)]$, ${\fallingdotseq}610nm$: ${\Gamma}_8[^4A_2(^4F)]{\rightarrow}{\Gamma}_8[^4T_1(^4F)]$], ${\fallingdotseq}661nm$: ${\Gamma}_8[^4A_2(^4F)]{\rightarrow}{\Gamma}_6[^4T_1(^4F)]$]) and $Pr^{3+}$(${\fallingdotseq}450nm$: ${^3}H{_4}-{^3}P{_2}$, ${\fallingdotseq}473nm$: ${^3}H{_4}{\rightarrow}{^3}P{_1}$, ${\fallingdotseq}484nm$: ${^3}H{_4}{\rightarrow}{^3}P{_0}$), change of ionization energy and lattice parameter were confirmed.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.269-273
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• 2002

The NASICON solid electrolyte films, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$(1.5< x < 2.3), was prepared from ceramic slurry by modified doctor-blade process. The NASICON solid electrolyte and fabricated sensors, Pt-electrode/NASICON/Carbonate$(Na_2CO_3-K_2CO_3CaCO_3\; system)$ electrode, were investigated to measure phase, microstructure and e.m.f variation for sensing $CO_2$ concentration. The uniform grain size of $2-4{\mu}m$ and major phase of sodium zirconium silicon phosphate phase, $Na_{1+x}Zr_2Si_xP_{3-x}O_{12}$was identified with X-ray diffraction patterns and scanning electron microscopy, respectively. The Nernst's slope of 84 mV/decade for $CO_2$ concentration from 500 to 8000 ppm was obtained at operating temperature of $400^{\circ}C$.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.171-177
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• 1999

In the $(Pb_{1-x}M_x)[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system, where M=Ca and Sr, the piezoelectric properties were evaluated to examine the possibility of application to piezoelectric transformer. A Rosen-type piezoelectric transformer was formed, then the electrical properties of voltage step-up ratio, frequency characteristics etc. were analysed. The morphotropic phase boundary was determined to be y=0.475 in $Pb[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system and the piezoelectric properties of this composition was kp=0.59, Qm=1600 and $\varepsilon_r$=1150. Moreover, when 1-2 mol% of Sr are substituted, enhanced piezoelectric properties of kp=0.61, Qm=1600 and $\varepsilon_r$=1400 were shown. The temperature rising (ΔT) of a piezoelectric transformer with $Pb[Mn_{1/3}Sb_{2/3})_{0.05}Zr_{0.475}Ti_{0.475})]O_3 $ composition was $10^{\circ}C$, and the voltage step-up ratio was 500 when the output voltage was 4000V, whereas the ΔT was below $3^{\circ}C$ and the resonant frequency variation ($\Delta f_r$) as a function of load resistance was below 5% when the output voltage was 2000 V. These characteristics are superior to the properties of materials, which were substituted by Ca or without substitution.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.232-239
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• 2008

The dental orthodontic mini-screw requires good mechanical properties and high corrosion resistance for implantation in the bone. The purpose of this study was to investigate the electrochemical characteristics of TiN and ZrN coated orthodontic mini-screws, mini-screws were used for experiment. Ion plating was carried out for mini-screw using Ti and Zr coating materials with nitrogen gas. Ion plated surface of each specimen w as o bserved with f ield emission scanning e lectron microscopy ( FE-SEM), e nergy dispersive x-ray spectroscopy (EDX), and electrochemical tester. The surface of TiN and ZrN coated mini-screw were more smooth than that of other kinds of non-coated mini-screw due to dercrease of machined defects. The corrosion current density of the TiN and ZrN coated mini-screw decreased compared to non-coated sample. The corrosion potential of TiN and ZrN coated mini-screw were higher than that of non-coated mini-screw in 0.9% NaCl solution. The pitting corrosion resistance increased in the order of ZrN coated, TiN coated and non-coated wire. Pitting potential of ZrN coated mini-screw was the highest in the other specimens.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06b
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• pp.55-85
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• 1996

지르코니아 분말은 ZrO2 결정상이 온도변화에 따라 부피변화를 수반하는 상전이변태를 나타낸다. 단사정 ZrO2가 110$0^{\circ}C$에서는 정방정으로, 2$700^{\circ}C$ 내외에서는 입방정으로 결정구조가 가역적으로 변한다. 이 ZrO2에 금속산화물을 고용시키면 형석 (CaF2:Florite)형의 입방정 결정구조가 실온에서도 안정하게 존재하게 된다. 안정화제 산화물은 caO, MgO등 2가 산화물외에 3가 또는 4가의 금속산화물로서 Sc2O3, Y2O3, Sm2O3, Nd2O3, Gd2O3, Y2O3, CeO2 등이며 이들은 금속이온의 원자가가 변하기 쉬운 희토류 산화물이다. 안정화 지르코니아는 형석형 결정구조이며 결정화학적으로 보면 금속양이온이 산소이온에 대해서 정육면체형의 8배위를 하고 있다. 이때 이온반경비(양이온/음이온)에 따라 Zr+4자리와 O-2자리의 격자위치와 모양이 형성되므로 비틀어진 정육면체구조이건 이상적인 정육면체 형석구조를 이룬다. 이는 지르코니아의 결정상의 2상-3상인 부분안정화 지르코니아다결정체(PSZ : partially stabilized zirconia)이거나 단일상-2상인 정방정 지르코니아다결정체(TZP : tetragonal zirconia polycrystal)의 결정구조를 가지는데 기인한다. PSZ는 주로 MgO, CaO를 안정화제로 고용시켜 입방정 영역에서 소결하고 이를 다시 입방정과 정방정의 상 영역에서 열처리하여 입방정 입자내부에 정방정을 석출 형성시킨 것이며 TZP는 Y2O3 및 CeO2를 고용시켜 PSZ와 다르게 일반적인 상압소결한 정방정 결정상의 미립자이다. 산화지르코늄 분말은 지르콘사에서 열분해시킨 지르코늄소결.융해괴(caustic fusion clinker)를 산처리하여얻어진 지르코늄산용액(zirconyl acid solution : cloride, sulfide, nitride 등)으로부터 제조된다. 고순도 산화지르코늄은 용액 결정석출법에 의해 ZrOCl2.8H2O, 5ZrO2.3SO3.15H2O, ZrO(NO3)2.xH2O 등의 지르코늄 수화물만을 재결정화시킨 것으로부터 얻을 수 있으며 이 지르코늄염 수용액으로부터 입자미세구조를 효과적으로 제어하여 산화지르코늄 및 안정화 지르코니아 분말제조가 가능하다. 안정화 지르코니아 분말은 ZrO2와 안정화산화물의 고용을위하여 가열처리를 필요로 하며 일정온도에서 최적상태로 숙성하므로서 2가지 상(phase) 이상의 고용체를 가지게 된다. 안정화 지르코니아 분말은 고용처리온도를 낮추고 효과적으로 생성시키기 위해서는 지르코늄 및 안정화제염을 혼합하고 습식 직접합성하여 저온에서 고용체의 합해진상 영역을 생성시키는 것이다. 이는 지르코니아 원료분말의 미세구조를 제어하므로서 가능하며 이때 화학성분조성과 크기형태가 균일하게 분포된 입자분말을 얻을 수 있다.