• Korean Journal of Materials Research
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• v.26 no.12
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• pp.681-687
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• 2016

Zirconium(Zr) nuclear fuel cladding tubes are made using a three-time pilgering and annealing process. In order to remove the oxidized layer and impurities on the surface of the tube, a pickling process is required. Zr is dissolved in HF and $HNO_3$ mixed acid during the process and pickling waste acid, including dissolved Zr, is totally discarded after being neutralized. In this study, the waste acid was recycled by adding $BaF_2$, which reacted with the Zr ion involved in the waste acid; $Ba_2ZrF_8$ was subsequently precipitated due to its low solubility in water. It is very difficult to extract zirconium from the as-recovered $Ba_2ZrF_8$ because its melting temperature is $1031^{\circ}C$. Hence, we tried to recover Zr using an electrowinning process with a low temperature molten salt compound that was fabricated by adding $ZrF_4$ to $Ba_2ZrF_8$ to decrease the melting point. Change of the Zr redox potential was observed using cyclic voltammetry; the voltage change of the cell was observed by polarization and chronopotentiometry. The structure of the electrodeposited Zr was analyzed and the electrodeposition characteristics were also evaluated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.130-134
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• 2009

A new long persistent phosphors of $CaZrO_3$ was synthesized at high temperature with weak reduction atmosphere by a traditional solid state reaction method. Photoluminescence spectra analysis showed that the $CaZrO_3$ doped with $Tb^{3+}$ emitted green-yellow emission caused by the energy level transition from the $^5D_3$ and $^5D_4$ to $^7F_1{\sim}^7F_6$. The main emission spectra of 542 nm peak by the $^5D_4{\rightarrow}^7F_5$ transition was revealed through synthesizing at high temperature in $N_2$ gas atmosphere. The afterglow emission spectra of $CaZrO_3:Tb^{3+}$ long persistent phosphores arise at 546 nm peak of narrow range. After the 254 nm ultraviolet light excitation source was switched off, the green-yellow long persistent phosphor can be observed which could last for 8 h in the limit of light perception of dark-adapted human eyes ($0.32\;mcd/m^2$).

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.355-359
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• 2010

A $Li[Co_{1/3}Ni_{1/3}Mn_{1/3}]O_2$ cathode was modified by applying a $ZrF_x$ coating. The surface-modified cathodes were characterized by XRD, SEM, EDS, TEM techniques. XRD patterns of $ZrF_x$-coated $Li[Co_{1/3}Ni_{1/3}Mn_{1/3}]O_2$ revealed that the coating did not affect the crystal structure of the parent powder. SEM and TEM images showed that $ZrF_x$ nano-particles were formed as a coating layer, and EDS data confirmed that $ZrF_x$ distributed uniformly on the surface the powder. Capacity retention of coated samples at high C rates was superior to that of pristine sample. However, as the coating concentration increases beyond the optimum concentration, the rate capability was deteriorated. Whereas, as the increase of coating concentration to 2.0 wt %, the cyclic performances of the electrodes under the severe conditions (high cut-off voltage, 4.8 V, and high measurement temperature, $55^{\circ}C$) were improved considerably.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.125-126
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• 2006

• Journal of the Korean Ceramic Society
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• v.47 no.3
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• pp.249-255
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• 2010

To investigate optical properties of (V, Pr)-doped $ZrSiO_4$ green pigments, samples were prepared by the ceramic method using NaF and NaCl as mineralizers. They were characterized by X-ray diffraction, UV-Vis spectroscopy and Raman spectroscopy. The changes of color in the samples during heating and effect of mineralizers were studied in terms of valence of the vanadium and praseodymium in the zircon matrix. (V, Pr)-doped $ZrSiO_4$ pigments give rise to green coloration in $800^{\circ}C$. The oxidation state of V and Pr ions of pigments in the glazed samples were confirmed by UV-Vis absorption spectra. This absorption spectra showed three typical bands of trivalent Pr at the 445, 480~490, 592 nm due to f-f transitions and two broad bands of 302~380, 400~500 nm due to f-d transitions of tetravalent Pr. According to the increasing amounts of $Pr_6O_{11}$, the two broad bands showed decreasing intensity at 290, 640 nm due to d-d transitions of tetravalent V.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.27-32
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• 2008

Novel long persistent phosphors of $CaZrO_3:Er^{3+}$ have been synthesized by traditional solid state reaction method. The long persistent phosphor crystalline particles were characterized by the X-ray diffraction (XRD), photoluminescence spectrophotometer, thermoluminescence (TL) and luminance meter. The results reveal that the samples are composed of single $CaZrO_3$ phase. The broadband emission spectra of 446 nm peak and 550 nm peak was revealed by synthesized at high temperature in $N_2$ gas. Green long persistent phosphors have been observed in the sys_em for over 6 h after UV irradiation (254 nm). The main emission peak was ascribed to $Er^{3+}$ ions transition from $^5D_{5/2}{\rightarrow}^4F_{9/2},\;^2H_{12/2},\;^4S_{3/2}{\rightarrow}^4I_{13/2}\;and\;^2G_{9/2}{\rightarrow}^4I_{13/2}$, and the afterglow may be ascribed to the suitable trap centers in the $CaZrO_3$ host lattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.1-4
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• 1994

In this study. the microwave dielectric properties, such at dielectric constant(${\varepsilon}_{\gamma}$), unloaded quality factor multiplied with resonant frequency($Q_{u}$.f), and temperature coefficient of resonant frequency(${\tau}_{f}$), were investigated for the low-temperature sintered (Pb, Ca)$ZrO_3$ with $V_2O_{5}$ additives as well as structural properties. As a result, (Pb,Ca)ZrO$_3$ with 0.2 wt% $V_2O_{5}$ additive, sintered at $1200^{\circ}C$, showed good properties like ${\varepsilon}_{\gamma}$ 109, $Q_{u}$.f 2736 GHz, and ${\tau}_{f}$ -2.94 ppm/$^{\circ}C$. Especially ${\tau}_{f}$ was much better than ($Pb_{0.63}Ca_{0.37}$)$ZrO_3$ of which ${\tau}_{f}$ was known to be + 13.4 ppm/$^{\circ}C$, so it seems to be applicated in micorowave device components.

• Analytical Science and Technology
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• v.13 no.3
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• pp.323-331
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• 2000

Two chelating resins, XAD-16-TAC and XAD-16-TAO were synthesized by Amberlite XAD-16 macroreticular resin with 2-(2-thiazolylazo)-p-cresol (TAC) and 4-(2-thiazolylazo)-orcinol (TAO) as functional groups. The sorption behaviour of Zr(IV), Th(IV) and U(VI) with two chelating resins were examined with respect to the effect of pH and masking agent by batch methods. It was obtained that the optimum pH was in the range of 5-6, and two chelating resins showed good separation efficiency of Zr(IV) or Th(IV) by using $NH_4F$ as a masking agent. Characteristics of desorption were investigated with 0.1-2 M $HNO_3$ as desorption agent. It was found that 2 M $HNO_3$ showed high desorption efficiency to most of metal ions except Zr(IV). XAD-16-TAC resin is applied to separation and preconcentration of trace Zr(IV) from mixed metal ions. Also, Th(IV) ion can be successfully separated from U(VI) and Zr(IV) ion by using XAD-16- TAO resin.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.377-385
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• 2002

The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.