• 한국세라믹학회지
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• 제23권3호
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• pp.44-52
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• 1986

$Al_2O_3-ZrO_2$ ceramics was obtained by the co-precipitation method using $Al_2(SO_4)_2$.$18H_2O$ and $ZrOCl_2$.$8H_2O$ as starting materials $MgCl_2$.$6H_2O$ as a sintering aid and NH4OH as a hydrolyzing agent. The coprecipitate from the above raw materials was calcined at 125$0^{\circ}C$ for 1h and again sintered at 1$650^{\circ}C$ for 2h before measurements of strength hardness and fracture toughness. MgO addition was found to increase mechanical properties of the $Al_2O_3-ZrO_2$ system. The strength and frac-ture toughness of $Al_2O_3-ZrO_2$ ceramics were considered to be increased by stress-induced phase tranforma-tion of $ZrO_2$.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3448-3452
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• 2011

Solvent-free reduction of various aldoximes and ketoximes to the corresponding amines was performed easily and efficiently with $NaBH_4$ in the presence of $ZrCl_4$ supported on $Al_2O_3$. The reactions were carried out rapidly (within 2 min) at room temperature to afford the amines in high to excellent yields.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.116-116
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• 2013

(Ni-22Cr-10Al-1Y)와 ($ZrO_2-25CeO_2-2.5Y_2O_3$)로 구성되는 금속/세라믹 복합코팅을 대기용사(ASP; air plasma spay)으로 철 기판위에 1:3, 2:2, 3:1의 무게비로 혼합하여 제조하였다. 용사된 코팅은 금속이영지역과 세라믹잉여지역으로 구별되고, 용사중에 NiCrAlY중의 Al이 선택적으로 산화되어 Al2O3가 계면에 존재하였다. 복합코팅은 $NaCl-Na_2SO_4$ 용융염에서 $800{\sim}900^{\circ}C$, 50시간 동안 부식실험을 실시하였다. 부식생성물은 NiO, $Cr_2O_3$, ${\alpha}-Al_2O_3$가 생성되는데, 부식이 진행되면서 용해되었다. 용융염 부식이 진행되는 동안에 Cr, Al이 외방확산하였고, Na, Cl, S는 내부로 확산되었다. 시간 및 온도뿐만 아니라 금속의 양이 증가할수록 코팅의 내식성은 저하되었다.

• 대한금속재료학회지
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• 제48권6호
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• pp.506-513
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• 2010

The composite coatings of $(ZrO_2-8Y_2O_3)$/(Ni-22Cr-10Al-1Y) were prepared by the air plasma spraying method. They consisted of (Ni,Cr)-rich regions,$(ZrO_2-Y_2O_3)$-rich regions, and $Al_2O_3$-rich regions that were formed by oxidation of Al from (Ni-22Cr-10Al-1Y) during spraying. The coatings corroded at 800 and $900^{\circ}C$ in NaCl-$Na_2SO_4$ molten salts up to 50 hr. Ni, Cr and Al oxidized to NiO, $Cr_2O_3$ and ${\alpha}-Al_2O_3$, respectively. These oxides and $(ZrO_2-Y_2O_3)$ were dissolved off into the molten salts during hot corrosion, which resulted in the ever-lasting corrosion of the composite coatings. Chromium diffused out from the (Ni,Cr)-rich regions and oxidized to $Cr_2O_3$, which was most frequently found as surface scales. Aluminum retained in the (Ni,Cr)-rich regions were similarly diffused out.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.865-868
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• 2002

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.251-251
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• 2011

본 연구에서는 Zr이 도핑 된 ZnSnO (ZZTO) 기반의 물질을 액상공정을 이용하여 합성하고, 박막트랜지스터를 제작하였다. 출발 물질로써 지르코늄 클로라이드 (ZrCl4), 아연 아세테이트 디하이드레이트 ($Zn(CH_3COO)_2{\cdot}2H_3O$), 틴 클로라이드 ($SnCl_2$)를 아연과 주석 프리커서의 비율을 4:7로 고정하고, 지르코늄 프리커서의 몰비를 변형시켜 제작하였다. 제작된 솔루션은 0.25몰의 몰 농도로 고정하였다. 솔벤트로는 2-메톡시에탄올 (2-methoxyethanol)을 사용하였으며, 준비된 솔루션은 $0.2{\mu}m$ 필터를 이용하여 필터링을 실시하였다. Heavily doped p+ Si 기판에 열적 산화법을 이용하여 120 nm 두께의 $SiO_2$를 성장시킨 것을 게이트 및 게이트 절연막으로 이용하였으며, 스핀코팅을 이용하여 ZZTO 박막을 코팅하였다. 코팅 된 기판은 $300^{\circ}C$에서 $500^{\circ}C$ 사이로 2시간 열처리를 실시하였으며, 마지막으로 소오스/드레인을 스퍼터링법으로 Al을 증착하였다. Zr 함량비, 열처리 온도, 제작된 솔루션의 온도에 따른 박막단계를 파악하기 위해 X-ray photoelectron spectroscopy (XPS), thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HR-TEM), Hall-effect measurement, UV-Vis spectroscopy 분석을 실시하였으며, 제작된 소자는 semiconductor analyzer (HP4156C)를 이용하여 측정하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.208-208
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• 2003

저온균일침전법(HPPLT)으로 제조된 TiO$_2$나노분말은 10$0^{\circ}C$이하의 온도에서 rutile상을 얻을 수 있다. 또한, rutile에서 anatase로의 상변화는 합성시간, 가열속도, 반응온도 그리고 음이온 첨가에 의해 일어난다고 보고되어졌지만, 금속양이온들에 의한 상변화는 알려진 바가 없다. 따라서, 다양한 양이온을 첨가하여 저온균일침전법에서 TiO$_2$의 상변화가 어떻게 일어나는지를 조사하였다. 출발원료인 TIC1$_4$를 사용하여 가수분해하여 0.67M의 TiOCl$_2$을 얻었다. 얻어진 TiOCl$_2$ 수용액에 각각 0.01M의 금속염화물(ZrOCl$_2$, NiCl$_2$, CuCl$_2$, FeCl$_3$, AlCl$_3$ 그리고 NbCl$_{5}$)을 첨가한 후 반응기에 넣고 10$0^{\circ}C$에서 4시간동안 가열하였다 가열한 후 얻어진 침전물에 NaOH 수용액을 이용하여 PH 7-8로 중화한 후 증류수로 Cl$^{-}$이온이 제거될 때까지 충분히 세척하였다. 세척된 침전물을 105$^{\circ}C$에서 24h동안 건조하여 분말을 얻었고, rutile에서 anatase로의 상변화특성을 관찰하기 위하여 XRD, SEM, TEM, ICP 분석을 실시하였다.

• 환경위생공학
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• 제9권2호
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• pp.8-23
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• 1994

During the period from Mar., 1991 to Feb., 1992 66 tSP samples were collected by Hi volume air sampler at 1 sampling site in Seoul and the amount of concentration of 21 components(SO$_{4}$$^{2-}$, NO$_{3}$$^{-}$, NH$_{4}$$^{+}$, Cl$^{-}$, Al, Ba, Ca, Cd, Cr, Cu, Fe, It Mg, Mn, Na, Ni, Pt Si, Ti, Zn, Zr ) were measured. And monthly and seasonal variation were surveyed and the principal component analysis( PCA ) were carried out with respect to these amount of pollutants, minimum of visibility and radiation on a horizontal surface. The total amount of soluble ion in water was high in order o(SO$_{4}$$^{2-}$> NO$_{3}$$^{-}$> N%'>Cl$^{-}$ and metal ion was high in order of Na> Ca>Si> Fe> Al> K> Mg> Zn> Pb> Cu>Ti> Mn > Ba> Cr> Zr> Ni> Cd. There was Seasonal variation in concentration for SO$_{4}$$^{2-}$, NH$_{4}$$^{+}$, Cl$^{-}$, Na, Al, Ca, Bt Mg, Fe and Si. It was assumed that the components of the highest concentration on April were depend on yellow sand and the frequency of wind velocity and direction. As the results of PCA, the amount of pollution components was able to characterized with two principal components(Z$_{1}$, Z$_{2}$ ). The first principal components Z$_{1}$ was considered to be a factor indicating the pollutants originated from natural generation and The second principal components Z$_{2}$ was considered to be a factor indicating the pollutants originated from human work. The monthly concentration of pollutants in ISP, minimum of visibility and radiation on a horizontal surface was possible to evaluate by the use of these two principal components Z$_{1}$ and Z$_{2}$ .

• 대한화학회지
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• 제55권3호
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• pp.418-429
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• 2011

[ $N^1,N^2$ ]bis(3-((3-hydroxynaphthalen-2-yl)methylene-amino)propyl)phthalamide ($H_4L$, 1) 의 새로운 크롬(III), 망간(II), 철(III), 코발트(II), 니켈(II), 구리(II), 루테늄(III) 및 산화 지르코늄(II) 착물을 합성하여 원소분석, 물리적 성질 및 분광학적으로 특성을 규명하였다. 분광학적 결과를 통해 이 리간드는 $[H_4LMX_2(H_2O)]{\cdot}nH_2O$ (M = Cu(II), Ni(II), Co(II), X = Cl 또는 $NO_3$)의 일반식을 갖는 착물2-5에서는 중성의 삼배위 리간드로 행동한다. 또는 $[H_4L(ZrO)_2Cl_2]{\cdot}8H_2O$ 의 일반식을 갖는 착물 6-9 에서는 이염기성 육배위 리간드로 행동한다. DMF 용액에서의 몰전기전도도 실험결과 이들 착물은 비이온성을 나타낸다. 고체 구리착물 2, 5 및 6 의 ESR 스펙트럼에서 $g_{\parallel}$ >g> $g_e$을 보이는데, 이는 일그러진 팔면체구조와 큰 공유결합성을 갖는 $d{_x}^2{_{-y}}^2$ 오비탈에 비공유 전자쌍이 존재함을 의미한다. 이합체 구리(II) 착물 $[H_2LCu_2Cl_2(H_2O)_4]{\cdot}3H_2O$ (6)에 대해 두 구리원자 사이의 거리를 ESR 스펙트럼으로부터 추정한 parallel component 의 field zero splitting 파라메타를 이용하여 계산하였다. 이들 화합물의 항박테리아 및 항균 활성도를 측정한 결과, 몇가지 금속 착물의 경우 표준시약인 tetracycline (박테리아) 및 Amphotricene B (균류)보다 더 큰 저해효과를 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).