• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.295-303
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• 2001

White emission thin film electroluminecent device was fabricated with ZnS for phosphor layers and BST ferroelectric thin film for insulating layers. The ZnS:Mn and $ZnS:SmF_3$ layers were used for emission of red color. Also the $ZnS:TbF_3$ and $ZnS:AgF_3$ layers were used to emission of green and blue color, respectively. And the fabrication conditions of the BST insulating layers were followings, that is, the composition ratio of target, substrate temperature, working pressure and operating gas ratio were $Ba_{0.5}Sr_{0.5}Ti_{0.3}$, $400^{\circ}C$, 30 mTorr and 9:1, respectively. The thickness of phosphor were 150 nm for each layers and the insulating layers of upper and bottom were 400 nm and 200 nm, respectively. The luminesence threshold voltage was $75\;V_{rms}$ and the maximum brightness of the thin film electroluminecent device was $3200\;cd/m^2$ at $100\;V_{rms}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.205-205
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• 2008

PZT 세라믹은 우수한 유전 및 압전특성을 갖고 있어 변압기, 센서 및 엑츄에이터 등에 널리 응용되고 있다. 그러나, 우수한 특성에도 불구하고 PZT세라믹스의 소결시 PbO의 높은 유독성 및 휘발로 인하여 환경오염을 야기 시킨다. 그러므로 PbO로 구성된 세라믹을 대체하기 위한 우수한 압전특성을 가진 비납계 세라믹스 개발이 연구의 주류를 이루고 있다. 그 중 비납계 NKN와 BZT는 대체물질로 많이 관심을 받고 있다. 이는 일반적인 NKN조성은 우수한 압전성과 높은 큐리온도를 가지고 있을 뿐만 아니라, BZT조성의 Zr성분이 큐리온도를 낮추거나 유전특성을 졸게 하여 유전율 곡선을 완화하게 하는 특징이 있다. 하지만 NKN은 $1140^{\circ}C$이상의 소결온도에서 K의 휘발특성으로 인해 소성 후에도 주변의 수분을 흡수하는 조해성이 발생하는 문제가 발생한다. 그래서 본 연구에서는 낮은 온도에서 NKN계 세라믹스의 밀도를 증가시킬 뿐만 아니라, 우수한 유전 및 압전특성을 갖는 세라믹스를 제조하고자 비납계 $0.94(K_{0.5}Na_{0.5})NbO_3-0.06Ba(Zr_{0.05}Ti_{0.95})O_3$ (NKN-BZT)의 조성을 사용하였고 소결조제로는 $MnO_2$, NiO, $Bi_2O_3$, ZnO, $Li_2CO_3$, CuO등을 변화주어 유전 및 압전 특성을 알아보았다.

• Economic and Environmental Geology
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• v.29 no.3
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• pp.247-256
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• 1996

Mineral commodities of metallic ore deposits related to Cretaceous granitoids in the Taebaegsan basin are distinguishable by rock types, diffferenciation index (D.I.) and chemical compositions. Deposits of Fe-Cu are related to granodiorite-quartz monzonite, those of Pb-Zn and W-Mo to granite-granodiorite and granite respectively. The ranges of D.I. of the granitoids are 39~71 for Fe-Cu deposits, 68~81 for Pb-Zn deposits, 78~89 for W-Mo deposits and 91~94 for Mn deposits. Major oxides of $K_2O$, CaO, MgO, FeO and $TiO_2$ and some trace elements and Rb/K, Sr/Ca and Cu/Fe also show distinguishable differences among the Cretaceous granitoids related to various mineral commodities of the ore depsits.

• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.309-325
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• 2004

The Cannington Ag-Pb-Zn deposit, northwest Queensland, Australia developed around the host rocks composing banded and migmatitic gneisses, sillimanite-garnet schist and amphibolite. Three crystal habits of sillimanite, gahnite (Zn-spinel) and garnet porphyroblasts occurred on the host rocks of the Cannington deposit could be used to delineate metamorphism that closely associated with Zn-mineralization in the deposit. Linkages the metamorphism to Zinc-mineralization is determined in four chemical systems, KFMASH (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$), KFMASHTO (K$_2$O-FeO-MgO-Al$_2$O$_3$-SiO$_2$-$H_2O$-TiO$_2$-Fe$_2$O$_3$), NCKFMASH (Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$) and MnNCK-FMASH (MnO-Na$_2$O-CaO-K$_2$O-FeO-MgO-AlO$_3$-SiO$_2$-$H_2O$), using THERMOCALC program (version 3.1; Powell and Holland 1988). Partial melting in MnNCKFMASH and NCKFMASH systems occurs at lower temperature than in the KFMASH and KFMASHTO systems. The partial melting temperature decreases with increasing of Na/(Na+Ca+K) of the bulk rock compositions in the MnNCKFMASH system. The host rocks have melted ca 15 vol.% in the MnNCKFMASH system at peak metamorphic conditions (634$\pm$62$^{\circ}C$ and 4.8$\pm$1.3 kbar), but partial melting have not occurred in KFMASHTO system. Based on calculations of sillimanite isograd in different systems and sillimanite modal pro-portion, prismatic and rhombic sillimanite and gahnite porphyroblasts including prismatic sillimanite inclusion probably have resulted from pressure and temperature increasing through partial melting (from 550～$600^{\circ}C$, 2.0～3.0 kbar to 700～75$0^{\circ}C$, 5.0～7.0 kbar), furthermore have experienced N-S then W-E crustal shortening during D$_1$ and D$_2$ deformation. Consequently, Zinc mineralization related to gahnite growth occurred during D$_2$ and was redistributed and upgraded by partial melting and retrograde metamorphism into structural and rheological sites during shearing in D$_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.291-291
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• 2009

ZnS:Mn/Cu,Cl 계 나노 형광체의 특성을 살펴보았다. 실험에서는 ZnS:Mn 과 ZnS:Cu,Cl 형광체 파우더를 이용하여 밀링을 통하여 분쇄하여 EL 소자를 제작하였다. 형광체 파우더를 볼밀에 $\Phi5mm$의 지르코나이 볼과 에탄올과 함께 넣고 2, 4, 6, 8, 10일간 밀링을 하였다. 밀링한 형광체 파우더를 SEM을 통하여 파우더의 사이즈를 관찰하였다. 또 이 파우더를 이용하여 EL 소자를 제작하였다. 소자의 구조는 기판은 알루미나 기판을, 하부 전극은 Au, 유전체는 $BaTiO_3$ 유전체 페이스트를 사용하였으며, 형광체 적층 후 ITO 전극을 스퍼터를 이용하여 증착하여 제작하였다. 제작한 소자를 이용하여 소자의 휘도 등 발광 특성을 살펴보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.99-102
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• 1997

An electronic nose system is an instrument designed far mimicking human olfactory system. It consists generally of gas (odor) sensor array corresponding to olfactory receptors of human nose and artificial neural network pattern recognition technique based on human biological odor sensing mechanism. Considerable attempts to develop the electronic nose system have been made far applications in the fields of floods, drinks, cosmetics, environment monitoring, etc. A portable electronic nose system has been fabricated by using oxide semiconductor gas sensor array and pattern recognition technique such as principal component analysis (PCA) and back propagation artificial neural network The sensor array consists of six thick film gas sensors whose sensing layers are Pd-doped WO$_3$ Pt-doped SnO$_2$ TiO$_2$-Sb$_2$O$_3$-Pd-doped SnO$_2$ TiO$_2$-Sb$_2$O$_{5}$-Pd-doped SnO$_2$+Pd filter layer, A1$_2$O$_3$-doped ZnO and PdCl$_2$-doped SnO$_2$. As an application the system has been used to identify CO/HC car exhausting gases and the identification has been successfully demonstrated.d.

• Journal of the East Asian Society of Dietary Life
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• v.10 no.6
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• pp.507-513
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• 2000

This study was conducted to investigate the shelf life of beef stored in antimicrobial pottery during 12days storage at 4'C and Five kinds of antimicrobial potteries were prepared with antimicrobial materials such as TiO$_2$, Ag (NO$_3$)$_2$, Cu(NO$_3$)$_2$ and Zn(NO$_3$)$_2$. In changes of color during storage, Hunter's L- and b-value of beef were not changed, but Hunter's a-value was low significantly. The pH of beef meats were low at 6 days, but were added from 6 days. TBA value of beef in "A" pottery containing TiO$_2$ 1% and "C" Pottery containing TiO$_2$ 0.5%, Cu(NO$_3$)$_2$ were lower than "B", "D" and "I" pottery. VBN contents of beef in "A", "B", "C", "D" and "I" Pottery stored during 12 days were 9.8, 12.5, 9.3, 11.9 and 13.7mg%, respectively. In changes of total plate count of beef during storage at 4$^{\circ}C$, the antimicrobial activity of "A" and "C" pottery were superior.g storage at 4$^{\circ}C$, the antimicrobial activity of "A" and "C" pottery were superior.ttery were superior.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.197.1-197
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• 2003

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.160-165
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• 2002

High-frequency dielectric and microwave absorbing properties have been investigated in ferroelectric materials (BaTiO$_3$(BT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$-xPbTiO$_3$(PMN-PT), (1-x)Pb$Mg_{\frac{1}{3}}Nb_{\frac{2}{3}}$O$_3$-xPb(Zn_{\frac{1}{3}}Nb_{\frac{2}{3}}$)O$_3$(PMN-PZN) for the aim of thin microwave absorbers in the frequency range of mobile telecommunication. The specimenns are prepared by conventional ceramic processing and complex permittivity has been measured by transmission/reflection method. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave range and their domiant loss mechanism is considered to be domain wall relaxation. The microwave absorbance of BT 0.9PMN-0.1PT, and 0.8PMN-0.2PZN specimen (determined at 2) are found to be 99.5% (at a thickness of 4.5 mm), 50% (2.5 mm), and 30% (2.5 mm), respectively. It is suggested that PMN-PT or PMN-PZN ferroelectrics are good candidate materials for the spacer of λ/4 absorber. The use of ferroelectric materials is effective in reducing the thickness of absorber with their advantage of high dielectric constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.