• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.175-178
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• 2004

The stochiometric mixture of evaporating materials for the $ZnIn_2S_4$ single crystal thin film was prepared from horizontal furnace. To obtain the $ZnIn_2S_4$ single crystal thin film, $ZnIn_2S_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively and the growth rate of the $ZnIn_2S_4$ sing1e crystal thin film was about $0.5\;{\mu}m/hr$. The crystalline structure of $ZnIn_2S_4$ single crystal thin film was investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $ZnIn_2S_4$ single crystal thin film measured from Hall effect by van der Pauw method are $8.51{\times}10^{17}\;cm^{-3}$, $291\;cm^2/V{\cdot}s$ at $293_{\circ}\;K$, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $ZnIn_2S_4$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_O$ and the crystal field splitting ${\Delta}Cr$ were 0.0148 eV and 0.1678 eV at $10_{\circ}\; K$, respectively. From the photoluminescence measurement of $ZnIn_2S_4$ single crystal thin film, we observed free excition $(E_X)$ typically observed only in high quality crystal and neutral donor bound exciton $(D^{o},X)$ having very strong peak intensity The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively, The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of Ceramic Processing Research
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• v.20 no.4
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• pp.411-417
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• 2019

Graphene doped zinc oxide nanoparticles (G-ZnO) were prepared using modified hummer's technique together with the ultrasonic method and characterized by field emission scanning electron microscopy (FESEM), X-ray powder diffraction (XRD), fourier-transform infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). Different samples of epoxy resin nanocomposites reinforced with G-ZnO nanoparticles were prepared and were marked as F1 (without adding nanoparticles), F2 (1% w/w G-ZnO), and F3 (2% w/w G-ZnO) in combination of ≈ 56:18:18:8w/w% with epoxy resin/hardener, ammonium polyphosphate, boric acid, and Chitosan. The peak heat release rate (PHRR) of the epoxy nanocomposites was observed to decrease dramatically with the increasing G-ZnO nanoparticles. However, the LOI values increased significantly with the increase in wt % of G-ZnO nanoparticles. From the UL-94V data, it was confirmed that the F2 and F3 samples passed the flame test and were rated as V-0. The results obtained in the present work clearly revealed that the synthesized samples can be used as efficient materials in fire-retardant coating technology.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.486-490
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• 2011

Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.45-46
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• 2015

Se 원소가 포함된 $CuIn_xGa_{1-x}Se_2$(CIGS) 단일 스퍼터링 타겟을 이용하여 후처리 공정없이 단일 스퍼터링 공정만으로 CIGS 흡수층 박막을 증착하여 소자 특성을 확인하였다. 단일 CIGS 흡수층 공정이 적용된 CIGS 박막태양전지 소자(유리기판/Mo/단일 CIGS 흡수층 박막/CdS/i-ZnO/Al-doped ZnO/Ni-Al grid)에서 10.0%의 태양광 변환 효을을 달성하였으며, 이는 기존의 복잡한 공정구조를 해결하여 대면적 양산화 CIGS 제조 공정에도 적용할 수 있음을 확인하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.339-342
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• 2007

$Cu(In_{1-x}Ga_{x})Se_2$(CIGS)는 매우 큰 광흡수계수를 가지고 있으므로 박막형 태양전지의 광흡수층 재료로서 많은 연구가 진행되고 있다. 박막이 태양전지의 광흡수층으로 이용되기 위해서는 큰 결정크기와 평탄한 표면, 적당한 전기적 특성을 가져야 한다. 이러한 특성들은 CIGS 박막의 조성에 큰 영향을 받고 있는 것으로 보고되고 있다. 본 연구에서는 동시증발법을 이용하여 Cu/(In+Ga) 비를 0.9로 고정한 후 Ga 조성(Ga/(In+Ga)의 비 : 0.32, 0.49, 0.69, 0.8, 1)을 변화시켜 Wide band gap CIGS 박막태양전지를 만들었다. 기판은 soda line glass를 사용하였고 뒷면 전극으로는 Mo를 스퍼터링법으로 증착하였다. 또한 버퍼층으로는 기존에 쓰이고 있는 CdS를 CBD(Chemical Bath Deposition)법으로 층착시켰으며, 윈도우층으로는 i-ZnO/n-ZnO를 스파터링 법으로 층착하였다. 그리고 앞면전극으로는 Al을 E-beam 으로 증착하였다. 분석은 XRD, SEM, QE로 분석하였다. 위 실험에서 얻은 결과로는 Ga/(In+Ga)비가 증가할수록 Cu(In,Ga)Se2 박막은 회절 peak들이 큰 회절각으로 이동하였고, 이것은 Ga 원자와 In 원자의 원자반경의 차이에서 기인된 것으로 사료된다. 또한 Ga 조성이 증가할수록 단파장 쪽으로 이동하는 것을 볼 수 있으며, Voc가 증가하다가 에너지 밴드캡이 1.62 eV 이상에서는 Voc가 감소하는 것을 볼 수 있는데 이것은 Ga 조성이 증가할수록 에너지 밴드캡이 커지면서 defect level 이 존재하기 때문인 것으로 사료된다. Ga/(In+Ga)비가 1일 때의 변환효율은 8.5 %이고， Voc : 0.74 (V), Jsc : 17.2 ($mA/cm^{2}$), F.F : 66.6(%) 이다.

• Restorative Dentistry and Endodontics
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• v.48 no.1
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• pp.3.1-3.14
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• 2023

Objectives: This study evaluated the effect of different nanoparticulated zinc oxide (nano-ZnO) and conventional-ZnO ratios on the physicochemical properties of calcium aluminate cement (CAC). Materials and Methods: The conventional-ZnO and nano-ZnO were added to the cement powder in the following proportions: G1 (20% conventional-ZnO), G2 (15% conventional-ZnO + 5% nano-ZnO), G3 (12% conventional-ZnO + 3% nano-ZnO) and G4 (10% conventional-ZnO + 5% nano-ZnO). The radiopacity (R_ad), setting time (S_et), dimensional change (D_c), solubility (S_ol), compressive strength (C_st), and pH were evaluated. The nano-ZnO and CAC containing conventional-ZnO were also assessed using scanning electron microscopy, transmission electron microscopy, and energy-dispersive X-ray spectroscopy. Radiopacity data were analyzed by the 1-way analysis of variance (ANOVA) and Bonferroni tests (p < 0.05). The data of the other properties were analyzed by the ANOVA, Tukey, and Fisher tests (p < 0.05). Results: The nano-ZnO and CAC containing conventional-ZnO powders presented particles with few impurities and nanometric and micrometric sizes, respectively. G1 had the highest Rad mean value (p < 0.05). When compared to G1, groups containing nano-ZnO had a significant reduction in the S_et (p < 0.05) and lower values of D_c at 24 hours (p < 0.05). The C_st was higher for G4, with a significant difference for the other groups (p < 0.05). The S_ol did not present significant differences among groups (p > 0.05). Conclusions: The addition of nano-ZnO to CAC improved its dimensional change, setting time, and compressive strength, which may be promising for the clinical performance of this cement.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.236-237
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• 2012

ZnO nanorods were grown on R-plane sapphire substrates with the seed layers annealed at different temperature. The effects of annealing temperature for the seed layers on the properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. For the as-prepared seed layers, the ZnO nanorods and the ZnO nanosheets were observed. Only the ZnO nanorods were grown as the annealing temperature was above $700^{\circ}C$. The optical transmittance in the UV region was almost zero while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanorods was increased as the annealing temperature increased to $700^{\circ}C$. In the visible region, the refractive index was decreased with increasing the wavelength, and the extinction coefficient was decreased as the annealing temperature increased to $700^{\circ}C$. The non-linear exciton radiative life time of the FX emission peak was established by cubic equation. The values of Varshni's empirical equation fitting parameters were ${\alpha}=4{\times}10^{-3}eV/K$, ${\beta}=1{\times}10^4K$, and $E_g(0)=3.335eV$ and the activation energy was found to be about 94.6 meV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.54-58
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• 2017

The effect of low temperature ($250^{\circ}C$) heat treatment after electron irradiation (irradiation time = 30, 180, 300s) on the chemical bonding and electrical properties of ZnO thin films prepared using a sol-gel process were examined. XPS (X-ray photoelectron spectroscopy) analysis showed that the electron beam irradiation decreased the concentration of M-O bonding and increased the OH bonding. As a result of the electron beam irradiation, the carrier concentration of ZnO films increased. The on/off ratio was maintained at ${\sim}10^5$ and the $V_{TH}$ values shifted negatively from 11 to 1 V. As the irradiation time increased from 0 to 300s, the calculated S. S. (subthreshold swing) of ZnO TFTs increased from 1.03 to 3.69 V/decade. These values are superior when compared the sample heat-treated at $400^{\circ}C$ representing on/off ratio of ${\sim}10^2$ and S. S. value of 10.40 V/decade.

• Journal of the Korean Chemical Society
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• v.60 no.1
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• pp.34-38
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• 2016

In this paper, zinc oxide nanoparticles (ZnO NPs) were synthesized using the sonochemical method, where equimolar amounts of zinc acetate dehydrate and sodium hydroxide were separately dissolved in deionized water, and then mixed for 30 min under magnetic stirring. The resultant white gel was sonicated for 60, 120, 180, 240, and 360 min with magnetic stirring. The obtained precipitates were centrifuged, repeatedly washed with ethanol to remove ionic impurities, and dried at 50 ℃ for 24 h. The formation of pure NPs was confirmed by X-ray diffraction, and their crystallinity and crystal phases were analyzed as well. Structural investigation was carried out by field-emission scanning electron microscopy (FE-SEM). The photocatalysis behavior of the ZnO NPs was investigated in a dark room under UV irradiation, using Rhodamine B. Spherical, rod, and flower-like ZnO NPs could be obtained by adjusting the sonication time, as observed by FE-SEM. The flower-like ZnO NPs exhibited excellent photocatalytic activity.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.346-346
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• 2012

We investigated electrical and optical properties and chemical states of amorphous In-Ga-Zn-O (a-IGZO) thin films deposited at different substrate temperatures (from room temperature to $300^{\circ}C$). a-IGZO thin films were fabricated by radio frequency magnetron sputtering using $In_2O_3$ : $Ga_2O_3$ : ZnO = 1 : 1 : 1 target, and their electrical and optical properties and chemical states were investigated by Hall-measurement, UV-visible spectroscopy and x-ray photoelectron spectroscopy (XPS), respectively. The data showed that as substrate temperature increased, carrier concentration increased, but mobility, conductivity, transmittance in the shorter wavelength region (>350 nm), and the Tauc-plot-estimated optical bandgap decreased. XPS data indicated that the intensity of In 3d peak compared to Ga 3d peak increased but the intensity of Zn 3d peak compared to Ga 3d decreased, and that, from the deconvoluted O 1s peak, defects or oxygen vacancies and non-quaternary contents increased as the temperature increased. The relative intensity changes of the In, Zn, and O 1s sub-component are suggested to explain the changes in electrical and optical properties.