• Title/Summary/Keyword: $ZnO@TiO_2$

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Study on Synthesis and Characterization of Magnetic ZnFe2O4@SnO2@TiO2 Core-shell Nanoparticles (자성을 가진 ZnFe2O4@SnO2@TiO2 Core-Shell Nanoparticles의 합성과 특성에 관한 연구)

  • Yoo, Jeong-yeol;Park, Seon-A;Jung, Woon-Ho;Park, Seong-Min;Tae, Gun-Sik;Kim, Jong-Gyu
    • Applied Chemistry for Engineering
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    • v.29 no.6
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    • pp.710-715
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    • 2018
  • In this study, $ZnFe_2O_4@SnO_2@TiO_2$ core-shell nanoparticles (NPs), a photocatalytic material with magnetic properties, were synthesized through a three-step process. Structural properties were investigated using X-ray diffraction (XRD) analysis. It was confirmed that $ZnFe_2O_4$ of the spinel, $SnO_2$ of the tetragonal and $TiO_2$ of the anatase structure were synthesized. The magnetic properties of synthesized materials were studied by a vibrating sample magnetometer (VSM). The saturation magnetization value of $ZnFe_2O_4$, a core material, was confirmed at 33.084 emu/g. As a result of the formation of $SnO_2$ and $TiO_2$ layers, the magnetism due to the increase in thickness was reduced by 33% and 40%, respectively, but sufficient magnetic properties were reserved. The photocatalytic efficiency of synthesized materials was measured using methylene blue (MB). The efficiency of the core material was about 4.2%, and as a result of the formation of $SnO_2$ and $TiO_2$ shell, it increased to 73% and 96%, respectively while maintaining a high photocatalytic efficiency. In addition, the antibacterial activity was validated via the inhibition zone by using E. Coli and S. Aureus. The formation of shells resulted in a wider inhibition zone, which is in good agreement with photocatalytic efficiency measurements.

Photocatalytic activity enhancement of TiO2 with adding Zn particles

  • Seo, Hyeon Jin;Boo, Jang Heon;Jang, Hyun Woo;Kim, Mi Jeong;Boo, Jin-Hyo
    • Applied Science and Convergence Technology
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    • v.25 no.6
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    • pp.162-165
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    • 2016
  • APhotocatalysis process uses ambient oxygen from air and irradiation, fundamentally UV light, to generate oxidation and reduction which can degrade almost all harmful organic and inorganic compounds to nontoxic substances. This study was focused on enhancement of photocatalytic activity which improves the photocatlytic efficiency with $TiO_2$ particle by mixing of certain amounts of Zn particles. We analyzed degradation of organic pollutant materials such as toluene and phenol with the mixed photocatalysis by using UV-visible spectrophotometer and obtained a result that photocatalytic activity is increased with increasing amount of Zn particle. Especially, in the case of $TiO_2$ (1 mmol) and Zn (0.1 mmol) mixture photocatalyst, we obtained at least 2 times higher photocatalytic activity compared with the commercially available $TiO_2$ photocatalyst (Degussa P-25), indicating that our mixed photocatalyts (Zn-doped $TiO_2$) is very effective of removing both organic dye and pollutants and the conversion rate of toluene is much faster than that of phenol.

Electrical and Optical properties of TiO2-doped ZnO Films prepared on PEN by RF-magnetron Sputtering Method (고주파 마그네트론 스퍼터링에 의해 성막된 TiO2가 도핑된 ZnO 박막의 전기적 및 광학적 특성)

  • Kim, Hwa-Min;Sohn, Sun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.837-843
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    • 2009
  • $TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

Atomic Layer Deposition for Energy Devices and Environmental Catalysts

  • Kim, Young Dok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.77.2-77.2
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    • 2013
  • In this talk, I will briefly review recent results of my group related to application of atomic layer deposition (ALD) for fabricating environmental catalysts and organic solar cells. ALD was used for preparing thin films of TiO2 and NiO on mesporous silica with a mean pore size of 15 nm. Upon depositing TiO2 thin films of TiO2 using ALD, the mesoporous structure of the silica substrate was preserved to some extent. We show that efficiency for removing toluene by adsorption and catalytic oxidation is dependent of mean thickness of TiO2 deposited on silica, i.e., fine tuning of the thickness of thin film using ALD can be beneficial for preparing high-performing adsorbents and oxidation catalysts of volatile organic compound. NiO/silica system prepared by ALD was used for catalysts of chemical conversion of CO2. Here, NiO nanoparticles are well dispersed on silica and confiend in the pore, showing high catalytic activity and stability at 800oC for CO2 reforming of methane reaction. We also used ALD for surface modulation of buffer layers of organic solar cell. TiO2 and ZnO thin films were deposited on wet-chemically prepared ZnO ripple structures, and thin films with mean thickness of ~2 nm showed highest power conversion efficiency of organic solar cell. Moreover, performance of ALD-prepared organic solar cells were shown to be more stable than those without ALD. Thin films of oxides deposited on ZnO ripple buffer layer could heal defect sites of ZnO, which can act as recombination center of electrons and holes.

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Sinterability and microwave dielectric properties of $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$ system ceramics sintered at low temperature (저온소결용 $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$ 세라믹스의 소결 및 마이크로파 유전 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Lee, Joo-Young;Kim, Nam-Hyeop;Lee, Joo-Sik;Shim, Sang-Heung;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.208-209
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    • 2006
  • Sinterability and microwave dielectric properties of the $Zr1-x(Zn_{1/3}Nb_{2/3})xTiO_4$(x=4, 6) system ceramics have been investigated as functions of zinc-borosilicate(ZBS) glass contents and amount of $Zn_{1/3}Nb_{2/3}O_2$ substitution with a view to applying the composition to LTCC technology. The addition of 25 wt% ZBS glass ensured successful sintering below $925^{\circ}C$. With increasing ZBS glass and $Zn_{1/3}Nb_{2/3}O_2$ contents increased dielectric constant and sinterability but addition ZBS glass decreased the quality factor significantly due to the formation of an excessive liquid and second phases. The sintered $Zr4(Zn_{1/3}Nb_{2/3})6TiO_4$ system ceramics at $925^{\circ}C$ with 25 wt% ZBS glass demonstrated 27.7 in dielectric constant (${\varepsilon}_r$), 3,850 m quality factor($Q{\times}f_0$), and +6 ppm/$^{\circ}C$ in temperature coefficient of resonant frequency($\tau_f$).

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Fabrication and Characteristics of ZnO-based thin film sensors with high selectivity for TMA gas (TMA 가스 선택성 향상을 위한 ZnO계 박막센서의 제작 및 특성)

  • Park, Sung-Hyun;Choi, Woo-Chang;Kim, Sung-Woo;Ryu, Jee-Youl;Choi, Hyek-Hwan;Lee, Myong-Kyo;Kwon, Tae-Ha
    • Journal of Sensor Science and Technology
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    • v.9 no.1
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    • pp.36-43
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    • 2000
  • In oder to enhance the selectivity of TMA(trimethylamine) gas, the ZnO-based films which were doped with $Al_2O_3$, $TiO_2, $In_2O_3$ and $V_2O_5$ catalysts with various weight percents were deposited in oxygen by RF magnetron sputtering method. To improve electrical stability of sensors, the ZnO-based films were annealed in oxygen at $700^{\circ}C$ for 1 hour. The TMA selectivity of sensors was defined by the magnitude($S_{TMA}/S_{DMA}$ and $S_{TMA}/S_{NH3}$) of TMA sensitivity relative to DMA and sensitivity ammonia($NH_3$) sensitivity, respectively. The $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ sensor showed high $S_{TMA}/S_{DMA}$ of 5.9 and $S_{TMA}/S_{NH3}$ of 26 to 160 ppm at the working temperature of $300^{\circ}C$ respectively.

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