• 한국재료학회지
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• 제21권6호
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• pp.352-356
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• 2011

[ $Zn_{2(1-x)}Mn_xSiO_4$ ]$0.07{\leq}x{\leq}0.15$) green phosphor was prepared by solid state reaction. The first heating was at $900^{\circ}C-1250^{\circ}C$ in air for 3 hours and the second heating was at $900^{\circ}C$ in $N_2/H_2$(95%/5%) for 2 hours. The size effect of $SiO_2$ in forming $Zn_2SiO_4$ was investigated. The temperature for obtaining single phase $Zn_2SiO_4$ was lowered from $1100^{\circ}C$ to $1000^{\circ}C$ by decreasing the $SiO_2$ particle size from micro size to submicro size. The effect of the activators for the Photoluminescence (PL) intensity of $Zn_2SiO_4:Mn^{2+}$ was also investigated. The PL intensity properties of the phosphors were investigated under vacuum ultraviolet excitation (147 nm). The emission spectrum peak was between 520 nm and 530 nm, which was involved in green emission area. $MnCl_2{\cdot}4H_2O$, the activator source, was more effective in providing high emission intensity than $MnCO_3$. The optimum conditions for the best optical properties of $Zn_2SiO_4:Mn^{2+}$ were at x = 0.11 and $1100^{\circ}C$. In these conditions, the phosphor particle shape was well dispersed spherical and its size was 200 nm.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1232-1233
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• 2006

To co-fire with commercial LTCC (Low Temperature Co-fired Ceramic) materials at $850^{\circ}C{\sim}880^{\circ}C$, different contents of $B_2O_3$ were added to the $Bi_2O_3-ZnO-Nb_2O_5$ (BZN) ceramics. According to the test results, the cubic phase of BZN was transformed into orthorhombic in all the test materials. $BiNbO_4$ phase was formed in test materials with $2{\sim}5wt%$ of $B_2O_3$ addition. The phase transformation of cubic BZN was controlled during the synthesis process with excess ZnO content. The Cubic and orthorhombic phases of BZN could coexist and be sintered densely at $850^{\circ}C/2hr$.

• 한국자기학회지
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• 제17권6호
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• pp.232-237
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• 2007

기본조성 $(Ni_{0.2}Cu_{0.2}Zn_{0.6})_{1+x}(Fe_2O_3)_{1-x}$에서 $Fe_2O_3$가 약간 부족한 비화학양론적인 조성비를 택하여 Ni-Zn-Cu 페라이트의 입계에 높은 저항층을 형성하고 소결을 촉진시켜 낮은 손실, 높은 투자율 및 자기유도 와 주성분을 치환해서 스피넬 격자를 고용시킬 목적으로 $TiO_2$ 및 $Li_2CO_3$를 소량 첨가하였다. 이들 원료들을 혼합한 후 가소 후 소결온도 $875^{\circ}C,\;900^{\circ}C,\;925^{\circ}C$ 및 $950^{\circ}C$에서 소결하였다. 각 시편들에 대한 소결밀도는 $4.85\sim5.32g/cm^3$으로 나타났고, 각 시편들의 고유저항은 $10^8\sim10^{12}\Omega-cm$으로 측정되었다. 시편들의 자기유도 특성 값은 대략 $800\sim1300G$ 부근이었으며, $TiO_2$를 첨가한 경우보다 $Li_2CO_3$를 첨가한 경우가 약간 높게 측정되었다. 각각 시편들의 보자력은 $2.5\sim4.5$ Oe로 연자성 재료의 범위로 나타났다. 초투자율 및 품질계수는 각각 $125\sim275$ 및 $65\sim83$으로 나타나 Ni-Zn-Cu 페라미트에서 측정되는 값들과 대동소이했다. 물리적인 특성값(고유저항, 자기유도, 초투자율, 품질계수 등)으로 미루어 보마 각종 고주파영역(microwave영역까지 포함) 통신기기 코어 및 편향 요크 코어 등으로 응용이 가능하다.

• 공업화학
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• 제5권2호
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• pp.327-336
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• 1994

본 연구는 아크롤레인의 선택산화반응에서 Mo-V-O와 금속산화물의 기계적 혼합촉매에 대한 synergy 효과를 고찰한 것으로 금속산화물로는 $SnO_2$, ${\alpha}-Sb_2O_4$, $WO_3$, ${\alpha}-Al_2O_3$, CuO, $MnO_2$, $Cu_2O$, MgO, CoO 그리고 ZnO 등을 사용하였다. $SnO_2$나 ${\alpha}-Sb_2O_4$와 Mo-V-O의 혼합물 촉매는 Mo-V-O보다 높은 전화율과 수율을 나타내었는데 이것은 이들이 산소 빈자리에 해리 홉착된 산소를 형성하여 Mo-V-O에 전달하는 상간협동에 의한 것으로 판단된다 그러나 $Cu_2O$, MgO, CuO, $MnO_2$와 Mo-V-O의 혼합물 촉매의 경우 전화율은 증가하였으나 수율은 감소하였고, CoO와 ZnO는 Mo-V-O의 촉매성능을 억제하였다. 각 금속산화물의 역할이 서로 다른 점을 그들의 산화-환원 특성으로 설명하였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.49.1-49
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• 2003

• 한국자기학회지
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• 제23권2호
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• pp.43-48
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• 2013

Chalcogenide $Fe_{0.9}M_{0.1}Cr_2S_4$(M=Co, Ni, Zn)에 대하여 X-선 회절법, 자기저항측정, Mossbauer 분광법을 이용하여 CMR특성과 자기적 성질을 연구하였다. 10 at%의 M 치환에서는 상온에서 입방정으로 정상 spinel 구조를 갖는 것으로 나타났다. 자기저항 실험결과 $T_C$ 부근에서는 도체-반도체 전이의 특성을 보이며 최대자기저항 온도가 나타났다. M$\ddot{o}$ssbauer 분광 실험 결과에서 Fe에 대한 Ni 치환은 초교환 상호작용을 강화시키고 Jahn-Teller 효과에 의한 완화 현상의 심화를 보여준다. CMR 특성은 망간산화물의 $Mn^{3+}$와 $Mn^{4+}$ 사이의 이중교환상호작용과 다르게 동적 Jahn-Teller 효과와 관계된 polaron에 기인한 도체-반도체 전이 의한 것으로 해석된다.

• 한국전기전자재료학회논문지
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• 제28권7호
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• pp.428-432
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• 2015

Sintering and microwave dielectric properties of $Zn_{2-2x}Si_{1+x}O_4$ (x=0~0.10) ceramics were investigated. The secondary phase of ZnO was observed in the specimen for x=0 whereas $SiO_2$ was detected in that for x=0.05. The composition of $Zn_2SiO_4$ might be close to x=0.02, i.e., $Zn_{1.96}Si_{1.02}O_4$; the ratio of Zn/Si is 1.922. The insufficient grain growth was observed in the specimen of x=0. For the specimens of $x{\geq}0.05$, the grain growth sufficiently occurred through the liquid phase sintering. The value of quality factor of all specimens was dependent on the x value, i.e., the ratio of Zn/Si, whereas that of dielectric constant was independent. Relative density, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.05, i.e., $Zn_{1.9}Si_{1.05}O_4$, sintered at $1,400^{\circ}C$ were 96.5%, 6.43, and 115,166 GHz, respectively.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.508-513
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• 2007

The electrical properties and stability of $ZnO-Pr_6O_{11}-CoO-Cr_2O_3-based$ varistors were investigated for different $Tb_4O_{11}$ amounts in the range of $0{\sim}1.0\;mol%$. As the $Tb_4O_{11}$ amount increased, the sintered density increased in the range of $99.1{\sim}101.1%$ of theoretical density and the average grain size decreased in the range of $7.7{\sim}4.8{\mu}m$. The varistor voltage increased in the range of $280.9{\sim}715.8V/mm$ and the nonlinear coefficient increased in the range of $26.4{\sim}44.4$ with the increased of $Tb_4O_{11}$ amount. The 0.25 mol% $Tb_4O_{11}$-doped varistors exhibited the high electrical stability, with -0.1% in variation rate of varistor voltage, -0.7% in variation rate of nonlinear coefficient, and +17.4% in variation rate of leakage current for specified dc accelerated aging stress of $0.95V_{1mA}/150^{\circ}C/24h$.

• Korean Journal of Chemical Engineering
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• 제35권12호
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• pp.2442-2451
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• 2018

Novel highly active visible-light photocatalysts in the form of zinc bismuth oxide ($ZnBi_2O_4$) and graphite hybrid composites were prepared by coupling via a co-precipitation method followed by calcination at $450^{\circ}C$. The asprepared $ZnBi_2O_4$-graphite hybrid composites were tested for the degradation of rhodamine B (RhB) solutions under visible-light irradiation. The existence of strong electronic coupling between the two components within the $ZnBi_2O_4$-graphite heterostructure suppressed the photogenerated recombination of electrons and holes to a remarkable extent. The prepared composite exhibited excellent photocatalytic activity, leading to more than 93% of RhB degradation at an initial concentration of $50mg{\cdot}L^{-1}$ with 1.0 g catalyst per liter in 150 min. The excellent visible-light photocatalytic mineralization of $ZnBi_2O_4-1.0graphite$ in comparison with pristine $ZnBi_2O_4$ could be attributed to synergetic effects, charge transfer between $ZnBi_2O_4$ and graphite, and the separation efficiency of the photogenerated electrons and holes. The photo-induced $h^+$ and the superoxide anion were the major active species responsible for the photodegradation process. The results demonstrate the feasibility of $ZnBi_2O_4-1.0graphite$ as a potential heterogeneous photocatalyst for environmental remediation.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.