• 한국지구과학회지
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• 제23권1호
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• pp.52-58
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• 2002

A colorless and transparent zirconium oxide ($Zr_{0.73}Y_{0.27}O_{1.87}$) crystal has been synthesized by the Bridgman-Stockbager method. The gem-quality material is produced by adding 20${\sim}$25 wt.% $Y_2O_3$ (stabilizer) and 0.04 wt.% $Nd_2O_3$ (decolorising agent) to the $ZrO_2$ powder. It shows a vitreous luster with a slight oily appearance. Under a polarizing microscope, it shows isotropic nature with no appreciable anisotropism. Mohs hardness value and specific gravity is measured to be 8${\sim}$$8{\frac{1}{2}}$ and 5.85, respectively. Under ultraviolet light it shows a faint white glow. The crystal structure of yttria-stabilized zirconia with 0.27 at.% Y has been re-investigated, using single crystal X-ray diffraction, and confirmed to be a cubic symmetry, space group $Fm{\overline{3}}m$ ($O^5_h$) with a=5.1552(5) ${{\AA}}$, V=136.99(5) ${{\AA}}^3$, Z=4. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of ${\Delta}/a{\sim}$0.033 and 0.11 along <110> and <111> from the ideal positions of the fluorite structure, respectively.

• 대한전자공학회논문지
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• 제27권9호
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• pp.1419-1426
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• 1990

The microstructure and electrical conductivity characteristics were examined for the Yttria Stablized Zirconia that were added Titania with the concentration of 0.02wt%, 0.05wt% and 0.1wt%. The stabilized cubic phase had not been changed. The obtained density of the sintered body was higher than 97% of the theoretical density as the grain growth and proe removal. And the highest density of 5.91g/cm**3 was obtained for 0.02wt% addition of TiO2. When 0.02 wt% TiO2 was added to YSZ, the electrical conductivity was 0.293.(\ulcorner.cm)**-1 and the limit of electrolyte regime Pn was 4x10**-28 atm. at 1, 100\ulcorner, respectively. Those were improved value compared with the electrical conductivity 0.107 (\ulcorner.cm)**-1 and Pn 1.5x10**-27atm. without adding TiO2.

• 한국자기학회지
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• 제12권2호
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• pp.41-45
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• 2002

졸-겔법으로 제조된 La/sub 0.7/Pb/sub 0.3/MnO₃(LPM)박막의 기판 효과에 따른 저 자장 영역에서의 터널형 자기저항 효과에 대하여 연구하였다. 다결정 LPMO 박막은 SiO₂/Si(100) 기판과 그 위에 확산 방지막(diffusion barrier)으로 안정화 지르코니아(yttria-stabilized zirconia, YSZ) 중간층을 도입한 기판에 증착하였으며, 반면에 c-축 방향 성장을 갖는 박막의 경우 LaA1O₃(001) (LAO) 단결정 기판을 사용하였다. LPMO/LAO 박막에서의 rocking curve 측정 결과 full width half maximum (FWHM) 값은 0.32°값을 가짐을 알 수 있었다. 상온(300 K)에서 측정한 자기저항비(MR ratio) 값은 500 Oe리 외부자장을 인가시 LPMO/SiO₂/Si 박막의 경우 0.52%, LPMO/YSZ/SiO₂/Si 박막인 경우는 0.68% 그리고, LPMO/LAO의 경우에는 0.4%에도 미치지 못하는 값을 가졌다. 이때 MR최대값을 나타내는 peaks는 자기이력 곡선의 보자력 부근에서 나타남으로 그 두 결과가 잘 일치함을 보여 주고 있다. 이러한 저 자장 영역에서의 자기저항 값의 타이는 박막 시료의 기판 효과에 의한 grain boundary특성의 차이로부터 기인된다.

• 공업화학
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• 제7권6호
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• pp.1125-1131
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• 1996

고체전해질형 연료전지의 산소극 재료로서 페롭스카이트 구조를 갖는 $PrMnO_3$에 Ca과 Sr을 도핑시켜 도핑량에 따른 전기전도도, 산소환원과전압 등의 전기화학적 특성과, 전해질인 yttria stabilized zirconia와의 반응성 그리고 열 팽창률 등을 살펴 보았다. 합성된 페롭스카이트 분말은 대략 $2{\sim}5{\mu}m$의 평균입자 크기를 나타내었는데 이때 입자크기 및 비표면적은 도핑량과 무관하였다. Ca이 30mo1% 도핑되었을 때 전기전도도는 $1000^{\circ}C$에서 $266S{\cdot}cm^{-1}$로 가장 높은 값을 나타내었고, 분극을 통해 살펴 본 산소환원특성도 Ca이 30mol% 도핑되었을 때 가장 우수한 특성을 나타내었다. 전극물질과 전해질인 YSZ를 $1200^{\circ}C$에서 100시간 동안 반응시킨 결과 $PrMnO_3$에 Sr을 도핑시켰을 때보다 Ca을 도핑시킨 것이 반응성이 훨씬 약한 결과를 나타내었다. $Pr_{0.7}Ca_{0.3}MnO_3$의 열팽창계수는 $300{\sim}1000^{\circ}C$의 영역에서 $1.19{\times}10^{-5}K^{-1}$로 측정되었고 이 값은 YSZ의 열팽창계수 $1.15{\times}10^{-5}K^{-1}$과 유사한 값이었다.

• 소성∙가공
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• 제27권1호
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• pp.48-53
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• 2018

Aluminum nitride (AlN) is used by the semiconductor industry that has requirements for high thermal conductivity. The theoretical thermal conductivity of single crystal AlN is 320W/mK. Whereas, the values measured for polycrystalline AlN ceramics range from 20 W/mK to 280 W/mK. The variability is strongly dependent upon the purity of the starting materials and non-uniform dispersibility of the sintering additive. The conventional AlN sintering additive used yttria ($Y_2O_3$), but the dispersibility of the powder in the mixing process was important. In this study, we investigated the mechanical and thermal conductivity of yttrium nitrate ($Y(NO_3)_3{\cdot}6H_2O$), as a sintering additive in order to improve the dispersibility of $Y_2O_3$. The sintering additives content was in the range of 2 to 4.5wt.%. The density of AlN gradually increased with increasing contents of sintering additive and the flexural strength gradually increased as well. The flexural strength of the sintered body containing 4 wt% of $Y_2O_3$ and $Y(NO_3)_3{\cdot}6H_2O$ was 334.1 MPa and 378.2 MPa, respectively. The thermal conductivities were 189.7W/mK and 209.4W/mK, respectively. In the case of hardness, there was only a slight difference and the average value was about 10 GPa. Therefore, densification, density and strength values were found to be proportional to its content. It was confirmed that AlN using $Y(NO_3)_3{\cdot}6H_2O$ displayed relatively higher thermal conductivity and mechanical properties than the $Y_2O_3$.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제33회 춘계학술대회 개최
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• pp.346-353
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• 2001

Zirconia powder containing 3 mol% yttria(3Y-PSZ) with and with out Fe$_2$O$_3$ addition was coated on tile cast iron substrate by plasma spraying method. The erosion experiments were performed at temperatures from $25^{\circ}C$ to $600^{\circ}C$. A gas blast type erosion tester was used to examine erosion behavior of the specimens. The results of 3Y-PSZ coatings showed that tile erosion rate had maximum value at 40$0^{\circ}C$. It coincided with tile results of phase transformation tetragonal phase to monoclinic phase caused by low temperature thermal degradation. The tensile stress relaxation and the micro-hardness improvement significantly influenced on the erosion rate at $600^{\circ}C$. In the case of Fe$_2$O$_3$ added 3Y-PSZ coatings, the erosion rate of tested at $25^{\circ}C$ showed maximum value at 5.0 mol% Fe$_2$O$_3$ added coating. This tendency is caused by the improvement of mechanical properties and the tensile residual stress. The erosion rate at 200'c and 400'L showed significantly decrease by Fe203 addition. This decrease is believed to be the stabilization of the tetragonal phase and the increase of micro-hardness.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.49.1-49.1
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• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• 한국재료학회지
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• 제4권5호
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• pp.510-515
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• 1994

플라즈마 화학 증착법으로 (100)p-type Si wafer위에 $Y_2O_3$-Stabilzed $ZrO_2$박막을 증착하였다. 반응 기체로는 zirconium triflouracethylacetonate[Zr(tfacac) $[Zr(tfacac)_4]$, tri(2.2.6.6 tetramethy1-3, 5-heptanate) yttrium $[Y(DPM)_3]$과 oxygen gas를 사용하였다. X-ray diffraction(XRD)과 fourier Particle induced x-ray emission(PIXE)을 통하여 $Y(DPM)_3$ bubbling temperature가 $160^{\circ}C, 165^{\circ}C, 170^{\circ}C$일때 $Y_2O_3$함량이 12.1mo1%, 20.4mol%, 31.6mol%임을 알 수 있었다. C-V측정에서 $Y(DPM)_3$ bubbling temperature가 증가함에 따라 flat band voltage가 더욱더 음의 방향으로 이동하였다.

• 한국재료학회지
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• 제22권2호
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• pp.78-81
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• 2012

$Y_2O_3$ nanomaterials have been widely used in transparent ceramics and luminescent devices. Recently, many studies have focused on controlling the size and morphology of $Y_2O_3$ in order to obtain better material performance. $Y_2O_3$ powders were prepared under a modified solvothermal condition involving precipitation from metal nitrates with aqueous ammonium hydroxide. The powders were obtained at temperatures at $250^{\circ}C$ after a 6h process. The properties of the $Y_2O_3$ powders were studied as a function of the solvent ratio. The synthesis of $Y_2O_3$ crystalline particles is possible under a modified solvothermal condition in a water/ethylene glycol solution. Solvothermal processing condition parameters including the pH, reaction temperature and solvent ratio, have significant effects on the formation, phase component, morphology and particle size of yttria powders. Ethylene glycol is a versatile, widely used, inexpensive, and safe capping organic molecule for uniform nanoparticles besides as a solvent. The characterization of the synthesized Y2O3 powders were studied by XRD, SEM (FE-SEM) and TG/DSC. An X-ray diffraction analysis of the synthesized powders indicated the formation of the $Y_2O_3$ cubic structure upon calcination. The average crystalline sizes and distribution of the synthesized $Y_2O_3$ powders was less than 2 um and broad, respectively. The synthesized particles were spherical and hexagonal in shape. The morphology of the synthesized powders changed with the water and ethylene glycol ratio. The average size and shape of the synthesized particles could be controlled by adjusting the solvent ratio.

• 한국세라믹학회지
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• 제34권10호
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• pp.1067-1073
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• 1997

The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.