• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1708-1711
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• 2006

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.386-390
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• 1990

Yttrium oxysulfide incoporated with europium has been prepared by direct heating the mixture of $Y_2O_3,\;Eu_2O_3,\;NaOH(or\;Na_2CO_3)$, and S. The reaction of the mixture at low temperatures and treatment at higher temperatures are studied. The formation of $Y_2O_2S$ is completed at lower temperature (ca. 500$^{\circ}C$) and incorporation of $Eu^{3+}$ into $Y_2O_2S$ lattice proceeds at higher temperature (above 1000$^{\circ}C$) along with crystal growth. Small amount of the unknown phase considered to be $Y_2O_2S_2$ is formed along with $Y_2O_2S$ in the temperature range from 400$^{\circ}C$ to 460$^{\circ}C$.

• 한국세라믹학회지
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• 제44권3호
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

• 반도체디스플레이기술학회지
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• 제23권1호
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• pp.88-91
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• 2024

The europium doped yttrium oxide (Y₂O₃:Eu³⁺) thin film was formed on a Si substrate by the conventional spin-coating process followed by rapid thermal annealing (RTA) treatment. The spinning profiles such as rotation speed, acceleration and holding times were controlled during the spin-coating process for the best condition of the Y₂O₃:Eu³⁺ thin film. The RTA treatment was conducted for several temperature in order to crystallize the spin coated film. The Y₂O₃:Eu³⁺ thin film presented best performance in the conditions of 4000 rpm, 30 s and 10 s of rotation speed, acceleration time and holding time, respectively, at a fixed RTA temperature of 900 ℃.

• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2523-2528
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• 2012

Green phosphors $(Zn_{1-a-b}M_aM^{\prime}_b)_xGa_yS_{x+3y/2}:Eu^{2+}$ (M, M' = alkali earth ions) with x = 2 and y = 2-5 were prepared, starting from ZnO, MgO, $SrCO_3$, $Ga_2O_3$, $Eu_2O_3$, and S with a flux $NH_4F$ using a conventional solidstate reaction. A phosphor with the composition of $(Zn_{0.6}Sr_{0.3}Mg_{0.1})_2Ga_2S_5:Eu^{2+}$ produced the strongest luminescence at a 460-nm excitation. The observed XRD patterns indicated that the optimized phosphor consisted of two components: zinc thiogallate and zinc sulfide. The characteristic green luminescence of the $ZnS:Eu^{2+}$ component on excitation at 460 nm was attributed to the donor-acceptor ($D_{ZnGa_2S_4}-A_{ZnS}$) recombination in the hybrid boundary. The optimized green phosphor converted 17.9% of the absorbed blue light into luminescence. For the fabrication of light-emitting diode (LED), the optimized phosphor was coated with MgO using magnesium nitrate to overcome their weakness against moisture. The MgO-coated green phosphor was fabricated with a blue GaN LED, and the chromaticity index of the phosphor-cast LED (pc-LED) was investigated as a function of the wt % of the optimized phosphor. White LEDs were fabricated by pasting the optimized green (G) and the red (R) phosphors, and the commercial yellow (Y) phosphor on the blue chips. The three-band pc-WLED resulted in improved color rendering index (CRI) and corrected color temperature (CCT), compared with those of the two-band pc-WLED.

• Progress in Superconductivity
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• 제14권2호
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• pp.110-115
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• 2012

Samples with nominal compositions of $RuSr_2(Eu_{1.34-x}Tb_xCe_{0.66})Cu_2O_z$ (x = 0, 0.67) were prepared and their superconductivity and magnetic properties were compared to shed light on the effect of Tb substitution for Eu. X-ray diffraction measurements indicate that the Tb substitution resulted in a decrease in both a and c lattice parameters in consistent with ionic size difference between Eu and Tb. Contrary to the Tb-free sample, no superconducting transition behavior is observed in the Tb-sustituted sample. It is also found that the Tb substitution for Eu significantly increases the weak-ferromagnetic component of the field-cooled magnetic susceptibility as well as an increase in the magnetic ordering temperature. These results suggest that the magnetic state of the Ru sublattice is significantly affected by the Tb substitution for Eu.

• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.532-537
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• 2003

Crystallographic, electric, magnetic and heat transition properties of $\alpha$-Fe$_2$O$_3$ have been studied with a small addition of Eu impurities. Hematite($\alpha$-Fe$_2$O$_3$) is a basic ferromagnetic material having rhombohedral structure, which is similar to perovskites structure. Eu is a rare earth element that has an electric configuration of 4f$^{7}$ 6s$^2$. X-ray diffraction pattern of Fe$_{1-x}$ Eu$_{x}$O$_3$ (x = 0.00, 0.04, 0.06) shows an increament of a value when the amount of Eu impurities increased. The VSM data show an increment of magnetization by increasing the amount of Eu impurity. The one with x=0.06 shows the largest increment of magnetic remanence. The magnetic remanence varied from 0.49$\times$10$^{-3}$ emu/g to 0.62$\times$10$^{-3}$ emu/g when Eu impurity is increased by 2 %. Coercivity is decreased as Eu impurity is increased. Resistances is reduced significantly by Eu impurity. There is a clear difference in temperature-dependent resistance depending on the amount of Eu impurities. Especially, there are cusps between 150 K to 175 K. It indicates the change of electronic quantum states inside the atoms by rare earth impurities in rhombohedral structure. Temperature-dependent heat capacity shows that the most effective amount of Eu impurities is 6 %. %.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.119-119
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.129-129
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• 2002

• 통상정보연구
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• 제9권2호
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• pp.205-230
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• 2007

In modern manufacturing practice it is sometimes necessary to send products to another country for special processing which cannot be performed inside the territory of the zone and Outward Processing(OP) covers such situation. What's more, process and Rules of Origin(RoO) of OP is implicated in Korea' Free Trade Agreement(Korea-Singapore, Korea-EFTA and Korea-Asean FTA) because of the goods to be producted in Kaesong Industrial Complex. Thus, In this paper analyse a implication of OP's process and RoO focused on the two fold : (1) provide an overview of the objectives, types, effects of Outward Processing described in customs law and FTA provisions of EU and Korea; (2) present a comparative analysis of EU and Korean rules; (3) offer an appropriate proposal to Korea-EU FTA negotiation.