• 한국세라믹학회지
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• 제38권9호
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• pp.794-798
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• 2001

Sol-gel법에 의하여 $Y_{2-x}SiO_5:Ce_x^{3+}$ (x=0.002∼0.04) 형광체를 제조하고 발광특성을 평가하였다. 800$^{\circ}$C에서 하소하였을 때는 무정형의 결정상이 나타났지만 1000$^{\circ}$C 이상에서는 $X_2$ type의 $Y_2SiO_5$ 결정상을 얻었다. 230∼360nm에서 형광체 모체의 광흡수가 일어났으며 300∼400nm에서 Ce 첨가로 인한 형광체의 광흡수가 관찰되었다. 436nm에서 최대의 발광 spectrum을 나타내었으며 $Ce^{3+}$ 함량을 0.025mol 첨가 시 $Y_{2-x}SiO_5:Ce_x^{3+}$ 형광체는 최대의 cathodoluminescence 특성과 CIE1931색 좌표 상에서 x=0.161, y=0.124의 색을 나타내었다.

• 한국세라믹학회지
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• 제53권4호
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• 대한화학회지
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• 제50권3호
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• pp.232-236
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• 2006

형광체의 특성을 향상시키기 위하여 Y1.99-xMxCe0.01SiO5(M=Li, La, Nd, and Gd)를 환원분위기에서 1350oC, 10시간동안 고상반응법으로 합성하였다. 상용품인 청색 형광체와 비교를 했을 때, 다양한 원소를 치환한 Y2SiO5:Ce 청색 형광체의 발광 특성이 우수 하다는 것을 관찰 할 수 있었다. 특히, 1mol%의 Li 이온이 도핑된 Y2SiO5:Ce 청색 형광체의 광 발광 특성이 가장 높았다. Y2SiO5:(Ce,Li) 청색 형광체의 입도형상을 주사전자현미경으로 분석한 결과, 입자의 크기가 약 3m인 유사구형임을 확인하였다.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.245-248
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• 1997

Photoluminescence (PL) and cathodoluminescence (CL) characteristics of Ce-activated $Y_{2-x}Ce_xSiO_5$ have been investigated as functions of Ce concentration and firing condition. According to the X-ray, PL and CL results, $Y_2SiO_5$ is found to have two phases depending on the firing temperature. For the specimen fired above 127$0^{\circ}C$, the emission band peaked at 395nm with a shoulder at 424 nm under ultraviolet (u.v.) and cathode-ray (c.r.) excitation. However, for the specimen fired below 120$0^{\circ}C$ in air the peak was observed at 424 nm and it shifted to longer wavelength with reduction level. The reduced specimen for x=0.02 showed the brightest emission under u.v. excitation whereas under c.r. excitation the brightest emission was observed for the reduced specimen for x=0.06.

• 한국결정성장학회지
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• 제26권1호
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• pp.14-18
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• 2016

$Ce^{3+}$ 이온을 도핑한 $(Ce_xLu_{1-x})_3MgAl_3SiO_{12}$ 형광체 샘플을 고상합성법으로 합성하였다. 열처리 온도를 1250부터 $1550^{\circ}C$ 온도영역에서 조절하면서 5 h 동안 소성하였으며, 소성된 샘플들의 XRD와 PL 특성을 조사하여 가장 최적의 열처리 온도를 구하고자 하였다. 또한 $Ce^{3+}$ 이온의 도핑농도를 2.0에서 10.0 mol%로 변화시키면서 $Ce^{3+}$ 이온의 도핑농도와 광학적 특성과의 관계를 고찰하였다. $Ce^{3+}$ 이온의 도핑농도에 따른 형광체들의 PL 강도, 피크위치, 반치폭을 계산하여 실제적인 LED 패키징에 가장 적절한 Ce 도핑 농도를 구하고자 하였다. 또한 최적의 소성온도와 Ce 도핑농도 조건에서 합성한 형광체 샘플의 입도와 입형을 분석하였다.

• 한국진공학회지
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• 제8권3B호
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• pp.322-326
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• 1999

We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• 한국재료학회지
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• 제13권3호
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• pp.180-184
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• 2003

Ce-doped $Y_2$SiO$_{5}$ phosphor particles of spherical morphology, fine size, high crystallinity and high photoluminescence (PL) intensity were prepared by spray pyrolysis. When nitrate precursor solution is adopted, hollow particles were formed by uneven drying rate between surface and inside of droplet. Citric acid and ethylene glycol were introduced as polymeric precursor to control the morphology of particles. When polymeric solution is adopted, polymeric chain is formed by the esterification reaction between carboxyl and hydroxy groups of citric acid and ethylene glycol, and considered as controlling the drying characteristics of droplet. $Y_2$$SiO_{5}$ :Ce phosphor particles prepared from polymeric precursor solution were spherical, filled, fine size and not agglomerate before and after post heat treatment. The optimum doping concentration of cerium was 0.5 mol% of overall solution concentration. The optimum amount of TBOS of high PL intensity and pure crystallinity of X2-type $Y_2$$SiO _{5}$ was 105% of stoichiometric amount. The PL intensity of $Y_2$X$/_{5}$ :Ce phosphor particles prepared using the polymeric precursor solution was 164% of that of the nitrate precursor solution due to homogeneous composition and good morphology.y.

• 한국결정성장학회지
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• 제25권3호
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• pp.121-126
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• 2015

A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

• 한국방사선학회논문지
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• 제9권3호
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• pp.169-174
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• 2015

본 연구는 $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ 형광체를 고상법으로 합성하여 X선 회절 실험으로 결정화 정도와 인회석 구조를 확인하였다. $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ 형광체의 $Ce^{3+}$이온의 농도 변화에 따른 여기 및 방출 스펙트럼과 수명시간을 측정하였다. 여기 스펙트럼에서 $Ce^{3+}$ 이온의 농도 증가에 따라 276 nm ($Gd^{3+}$ $^8S_{7/2}{\rightarrow}^6I{_J}$ 전이) 형광 세기가 감소하는 에너지 전달을 확인하였다. 방출 스펙트럼에서 $Ce^{3+}$ 이온의 농도 증가에 따라 결정장의 변화에 의해 410 nm($Ce^{3+}$ $^2F_{5/2}$ and $^2F_{7/2}$) 방출 밴드의 파장이 장파장 쪽으로 이동하는 특성을 확인하였으며 314 nm에서 $Gd^{3+}$에서 $Ce^{3+}$로의 에너지 전달로 인해 $Gd^{3+}$ 형광 방출 세기가 감소하는 것을 확인하였다. $LiGd_9(SiO_4)_6O_2:Ce^{3+}$ 형광체의 $Ce^{3+}$의 수명시간은 약 20 ns로 짧은 특성을 나타내었고 $Ce^{3+}$의 농도가 증가하면 수명시간이 수 ns 감소하였다.