• 전기화학회지
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• 제8권1호
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• pp.32-36
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• 2005

본 연구는 $WO_3$ 박막과 $NiO-WO_3$ 박막을 고진공 저항가열식 thermal evaporation 법으로 (100) n형의 실리콘 단결정 기판 위에 증착시켰고, 막의 결정성 증진을 위하여 공기 중 $500^{\circ}C$에서 30분 동안 열처리하였다. 박막의 결정성 및 결정구조를 분석하기 위해서 X선 회절분석기를 사용하였고, 표면 및 단면 관찰을 위해서는 주사전자현미경을 이용하였다. 그리고 화학 조성 결합에너지는 XPS를 이용하였다. 순수 $WO_3$ 박막의 결정 크기는 $500^{\circ}C$에서 30분 동안 공기중 열처리에 의해서 $0.6{\mu}m$로 성장하였고 $WO_3$ 박막의 두께가 증가할수록 거의 변화 없이 일정하였다. 반면, NiO가 첨가된 $WO_3$ 박막 두께별 결정크기는 각각 $0.12{\mu}m,\;0.28{\mu}m,\;0.32{\mu}m$및 $0.43{\mu}m$로 순수 $WO_3$ 박막에 비해 치밀한 표면을 형성하였고, 최대 5배정도 성장이 억제되었다. 가스감도 측정은 대기 중에서의 센서 저항 값을 기준으로 측정가스 저항 값의 비율 $(R_{NOx}/R_{air})$로 가스감도를 나타내었다. 전기적 성질은 MFC로 NOx가스 5ppm을 일정히 유지시켰고, Multimeter로 계측하여 컴퓨터에 자동 계측되는 시스템을 사용하였다. 순수 $WO_3$박막보다는 $NiO-WO_3$ 박막이 우수한 NOx 감도특성을 보였고 센서의 작동온도는 $250^{\circ}C$에서 우수한 감도를 나타내었다.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.29-34
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• 2005

Tungsten oxide($WO_{3}$) is suitable to materials for photochromic window in the visible region. The resistivities of CdS, $WO_{3}$, and $WO_{3}$/CdS films prepared by thermal evaporation method were $4.61\times 10\^{3}$, $7.59\times10^{3}$, and $6.29\times10^{3}$ $\omega$ cm. And x-ray diffraction patterns of CdS, $WO_{3}$/CdS films showed a preferred orientation of hexagonal(002), and the monoclinic(020) structure, respectively. The optical transmission were measured that the cut-on wavelength were 510nm, 380nm for CdS and $WO_{3}$ films respectively, and the transmission spectrum of $WO_{3}$/CdS was shifted into the visible region. Photoluminescence(PL) spectra showed the two peaks at 2.8 eV and 3.2 eV for the as-grown sample($WO_{3}$/CdS ($500{\AA}$), but the other sample($WO_{3}$/CdS ($1000{\AA}$)) had a peak energy value of 2.8 eV. The photochromism of $WO_{3}$/CdS films showed that the excitation of electron-hole pairs and subsequent coloration is shifted into visible-light range. And the spectral behavior of coloration turned out to be proportional to the excited electron-hole pairs creation rate of CdS film. This result is interpreted in terms of charge carrier injection from the CdS-layer into the $WO_{3}$ films. We found a value of about 2.8 eV of $WO_{3}$/CdS film which is somewhat higher than peak energy of 2.54 eV using CBD prepared by Bechinger et. al.

• 전기학회논문지
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• 제59권9호
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• pp.1621-1625
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• 2010

Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

• 한국표면공학회지
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• 제55권2호
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• 청정기술
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• 제15권3호
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• pp.202-209
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• 2009

질소 도핑된 $WO_3$ ($WO_3$:N) 막을 반응성 RF 마그네트론 스퍼터링을 이용하여 상온에서 증착한 다음, $300^{\circ}C$에서부터 $500^{\circ}C$의 온도 구간에서 후열처리(post-annealing)하였다. $WO_3$ 내 질소 음이온은 O 2p valence state와의 mixing effect 의해 광학적 밴드갭을 줄임으로써 장파장 영역의 빛을 흡수할 수 있었다. 더욱이 $350^{\circ}C$ 이상의 후열처리에 의해 $WO_3$:N의 결정성이 크게 향상됨을 발견하였으며, 동일 온도에서 열처리된 순수한 $WO_3$ 막보다 광전기화학 특성이 휠씬 우수한 셀 성능을 가짐을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.510-515
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• 2014

Thin films of cubic $Na_{0.6}WO_3$, which is one of the sodium tungsten bronze, were fabricated by rf sputtering for the electrode applications in integrated sensors and actuators. A single-phase cubic $Na_{0.6}WO_3$ sputtering target of power type was prepared by conventional solid-state reaction. Thin films were deposited from the powder target, and the as-deposited films were amorphous, thus they annealed by tube furnace or RTP for crystallization. Thin films having cubic phase $Na_xWO_3$ were fabricated by the optimization of sputtering and post-annealing conditions, but single-phase cubic $Na_{0.6}WO_3$ thin films were not obtained. Although the films were not in single phase, they had good electrical conduction properties showing electrical resistivities of $10-4{\Omega}{\cdot}cm$ order.

• 센서학회지
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• 제15권2호
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• 한국세라믹학회지
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• 제34권4호
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• pp.387-393
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• 1997

In order to apply WO3 thin films to the semiconducting NOx gas sensors as a sensing material, which have been expected to show good electrical properties, such as large sensitivity, rapid responsibility, and high selectivity, the fabrication method and their sensing characteristics were studied. The variations of surface morphologies, crystallographic orientations and crystallinity with the WO3 thin film growing methods thermal evaporation and DC sputtering methods were investigated by using scanning electron microscopy (SEM) and X-ray diffraction(XRD) analysis. As a result of sensitivity (Rgas/Rair) measurements for the 5 ppm NO2 test gas, the sensitivity values were 113 for the sputtered films and 93 for the evaporated films. It was also observed that the recovery rate of a sensing signal after measuring sensitivity was faster in the sputtered films than in the evaporated films.

• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.602-610
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• 2012

The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.

• 전기학회논문지
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• 제63권11호
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• pp.1533-1537
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• 2014

$WO_3/Ag/WO_3$ multilayer was researched by using RF magnetron sputtering with transparent electrode. Process gas flow ratio with $Ar/O_2$ were selected the optimum conditions at 70sccm/2sccm and $WO_3$ thin film at its conditions was appeared at transmittance about 80% in the visible light region to the average. $WO_3/Ag/WO_3$ multilayer thin films were fabricated from the same process condition which was the same gas flow ratio of Ar and $O_2$ $WO_3/Ag/WO_3$ thin films were appeared transmittance about 93% and sheet resistance about $6.41{\Omega}/{\square}$. From the SEM images, each thin films were appeared when $WO_3$ is 40nm and $O_2$ is 10nm.