• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• 전기의세계
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• v.28 no.5
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• pp.39-43
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• 1979

The aging of permittivity of a barium titanate dielectrics doped with La$_{2}$O$_{3}$ under zero and low DC field has been studied. The aging rate was decreased as the amount of La$_{2}$O$_{3}$ addition is increased to 3 mole%. The zero field aging rate of barium titahate doped with La$_{2}$O$_{3}$. 3TiO$_{2}$ was similar to that doped with La$_{2}$O$_{3}$.5V/mil DC field aging rate of La$_{2}$O$_{3}$.3TiO$_{2}$ doped sample, howeve, was lowered to that of La$_{2}$O$_{3}$ doped sample. When the phase transformation is occured from the paraelectric state to the ferroelectric state, 90.deg. domains are mucleated in order that the system becomes thermodynamically more stable. It is concluded that the aging phenomenon is occured as the dielectric constant is decreasing by the nucleation and growth of 90.deg. domains.

• Bulletin of the Korean Chemical Society
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• v.29 no.8
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• pp.1495-1498
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• 2008

$TiO_2$ nanopowders were synthesized by new sol-gel combustion hybrid method using acetylene black as a fuel. The dried gels exhibited autocatalytic combustion behaviour. $TiO_2$ nanopowders with an anatase structure and a narrow size distribution were obtained at 400-600 ${^{\circ}C}$. Their crystal structures were examined by powder Xray diffraction (XRD) and their morphology and crystal size were investigated by scanning electron microscopy (SEM). The crystal size of the nanopowders was found to be in the range of 15-20 nm. $TiO_2$ powders synthesized at 500 ${^{\circ}C}$ and 600 ${^{\circ}C}$ were applied to a dye solar cell. An efficiency of 5.2% for the conversion of solar energy to electricity ($J_{sc}$ = 11.79 mA/$cm^2$, $V_{oc}$ = 0.73 V, and FF = 0.58) was obtained for an AM 1.5 irradiation (100 mW/$cm^2$) using the $TiO_2$ nanopowder synthesized by the sol-gel combustion hybrid method at 500 ${^{\circ}C}$.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.913-918
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• 2014

Five mol % tungsten-doped tin oxide ($W_{0.05}Sn_{0.95}O_2$, TTO5) was prepared by co-precipitation of $SnCl_4{\cdot}5H_2O$ and $WCl_4$, followed by calcination at $1000^{\circ}C$. The as-prepared TTO5 was in the pure cassiterite phase with a particle size of ~50 nm and optical bandgap of 2.51 eV. Herein it was applied for the formation of TTO5/$TiO_2$ heterojunctions by covering the TTO5 surface with $TiO_2$ by sol-gel method. Under visible-light irradiation (${\lambda}{\geq}420$ nm), TTO5/$TiO_2$ showed a significantly high photocatalytic activity in removing gaseous 2-propanol (IP) and evolving $CO_2$. It is deduced that its high visible-light activity is caused by inter-semiconductor holetransfer between the valence band (VB) of TTO5 and $TiO_2$, since the TTO5 nanoparticle (NP) exhibits the absorption edge at ~450 nm and its VB level is located more positive side than that of $TiO_2$. The evidence for the hole-transport mechanism between TTO5 and $TiO_2$ was also investigated by monitoring the holescavenging reaction with 1,4-terephthalic acid (TA).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.99-99
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• 2000

본 논문에서는 RF Magnetron Sputtering 방법으로 Ba0.5Sr0.5TiO3 박막을 Pt/Ti/SiO2/Si 기판위에 증착하였다. Ar과 O2의 가스비는 90:10부터 50:50까지 O2의 함유비율을 10씩 증가시켰으며, 모든 조건에서 증착온도는 실온으로 설정하였다. Ba0.5Sr0.5TiO3 박막의 증착후 각 가스비에 따른 동일한 샘플에 대해 RTA(Rapid Thermal Anneal) 장비를 이용하여 $600^{\circ}C$에서 열처리는 하여 열처리 효과에 대한 특성도 조사하였다. 최종적으로 제작한 BST 커패시터는 Pt/BST/Pt 구조를 갖는 MIM(Metal-Insulator-Metal) 구조의 커패시터였으며 상.하부 전극은 전기적 특성이 우수한 Pt를 사용하였다. 제작된 BST 커패시터를 대해 유전 특성을 조사하기 위해 C-V 측정을 한 결과 산소 함유량이 증가함에 따라 유전율의 증가를 보여주었으며, 제작된 샘플 중 산소 함유량이 30인 샘플은 300이상의 우수한 유전율을 나타내었다. 또한 누설 전류특성에서는 모든 샘플에 대해 1.0V의 인가전압에서 1.0$\times$106A/cm2 이하의 누설 전류 밀도 값을 가져 전기적으로도 안정된 커패시터 구조임을 확인하였다. 또한 막의 증착상태와 미세구조관찰을 위해 SEM 측정을 하였고 구성성분 결정 구조를 알기 위해 XRD 측정도 시행하였다. 결과적으로 본 논문에서 제작된 커패시터 중 Sr/O의 비율이 70:30인 샘플이 가장 우수한 유전특성을 나타내었고, 이 샘플의 유전특성과 누설 전류 특성은 차세대 메모리인 1GigaByte급 DRAM에 적용 가능한 조건들을 만족시켰다.

• The Journal of Korean Academy of Prosthodontics
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• v.49 no.1
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• pp.16-21
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• 2011

Purpose: The purpose of this study was to investigate the bioactivity of precalcified nanotubular $TiO_2$ layer on Ti-6Al-7Nb alloy. Materials and methods: Anodic oxidation was carried out at a potential of 20 V and current density of 20 mA/$cm^2$ for 1 hour. The glycerol solution containing 1 wt% $NH_4F$ and 20 wt% deionized water was used as an electrolyte. Precalcification treatment was obtained by soaking in $Na_2HPO_4$ solution at $80^{\circ}C$ for 30 minutes followed by soaking in saturated $Ca(OH)_2$ solution at $100^{\circ}C$ for 30 minutes, followed by heat treatment at $500^{\circ}C$ for 2 hours. To evaluate the activity of precalcified nanotubular $TiO_2$ layer, specimens were immersed in a simulated body fluid with pH 7.4 at $36.5^{\circ}C$ for 10 days. Results: 1. Nanotubular $TiO_2$ layer showed the highly ordered dense structure by interposing small diameter nanotubes between large ones, the shape of nanotubes was enlarged as going down. 2. The mean length of nanotubes was $517.0{\pm}23.2\;nm$ innm glycerol solution containing 1 wt% $NH_4F$ and 20 wt% $H_2O$ at 20 V for 1 hour. 3. The bioactivity of Ti-6Al-7Nb alloy was improved with formation of nanotubular $TiO_2$ layer and precalcification treatment in $80^{\circ}C$ 0.5 M $Na_2HPO_4$ and saturated $100^{\circ}C$ $Ca(OH)_2$ solution. Conclusion: Bioactivity of precalcified nanotubular $TiO_2$ layer on Ti-6Al-7Nb alloy was improved.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.447-451
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• 2007

We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

• Journal of the Korean Ceramic Society
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• v.17 no.4
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• pp.203-207
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• 1980

The optical absorption of high index glasses of the system TiO2-BaO-B2O3 prepared from the raw materials for an optical waveguide glass has been measured in the near ultraviolet region. The amount of Ti3+ in the glass could be reduced to a level less than 5 ppm by melting a batch added with pure nitric acid, using a fused quartz crucible in an oxygen gas atmosphere. The ultra-pure glass of 10mm thick prepared in such a way did not show any appreciable color even for the one containing 30 mol% TiO2 and having refractive index nD of 1.84 and Abbe's number vD of 28.8. The wavelength of ultraviolet absorptin edge was longer for the glass of higher index and higher dispersdion. The melting of a TiO2 containing glass in a platinum crucible resulted in a coloration of the glass due to the dissolved plutinum from the crucible, which was more intense for the one containing larger amount of TiO2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.259-262
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• 2003

The surface electronic state of rutile $TiO_2$, which is an oxide semiconductor and has a wide band gap of 3.1 $\sim$ 3.5 eV, was calculated by DV-$X_{\alpha}$ method, which is a sort of the first principle molecular orbital method and uses Hartre-Fock-Slater approximation. The $[Ti_{15}O_{56}]^{-52}$ cluster model was used for the calculation of bulk state and the $[OTi_{11}O_{34}]^{-24}$ model for the surface state calculation. After calculations, the energy level diagrams and the deformation electron density distribution map were compared in both models. As results, it was identified that the surface energy levels are found between the valence and conduction band of bulk $TiO_2$ on the surface area. The energy values of these surface-induced levels are lower than conduction band of bulk $TiO_2$ by 0.1 $\sim$ 1 eV. From this fact, it is expected that the surface energy levels act as donar levels in n-type semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.