• Journal of the Korean Chemical Society
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• v.58 no.6
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• pp.524-527
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• 2014

We report a simple yet efficient method to assemble large-scale aligned graphene nanoribbons (GNRs) with a width as small as 30 nm. The $V_2O_5$ nanowires (NWs) were aligned on a graphene surface via spraying a solution of the $V_2O_5$ NWs, and the graphene was selectively etched by the reactive ion etching method using the $V_2O_5$ NWs as a shadow mask. This process allowed us to prepare large scale patterns of the aligned GNRs on a $SiO_2$ substrate. The orientation of the aligned and randomly oriented GNRs was compared by the atomic force microscope (AFM) images. We achieved the highly aligned GNRs along the flow direction of the $V_2O_5$ NWs solution. Furthermore, we successfully fabricated a field effect-transistor with the aligned GNRs and measured its electrical properties. Since our method enable to prepare the aligned GNRs over a large area, it should open up new way for the various applications.

• Journal of the Korean Chemical Society
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• v.61 no.1
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• pp.12-15
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• 2017

We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.325-325
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• 2012

1차원구속 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si (111) 기판 위에 GaAs NWs 와 InAs NWs를 촉매를 이용하지 않고 성장 하였다. vapour-liquid-solid (VLS)방법으로 성장하는 GaAs NWs는 Ga의 droplet을 이용하게 되는데 Ga이 Si 기판위에 자연 산화막에 존재하는 핀홀(pinhole)로 이동하여 1차적으로 Ga droplet 형성하고 이후 공급되는 Ga과 As은 SiO2 보다 GaAs와 sticking coefficient 가 좋기 때문에 Ga drolept을 중심으로 빠른 선택적 성장을 하게 되면서 NWs로 성장을 하게 된다. 반면에 InAs NWs를 성장 할 시에 droplet 방법으로 성장을 하게 되면 NWs가 아닌 박막 형태로 성장을 하게 되는데 이것으로 InAs과 GaAs의 $SiO_2$와의 sticking coefficient 의 차이를 추측을 할 수 있다. InAs NWs는 GaAs NWs는 달리 native oxide를 이용하지 않고 InAs 과 Si 사이의 11.5%의 큰 lattice mismatch를 이용한다. 이종의 epitaxy 방법에는 크게 3종류 (Frank-van der Merwe mode, Stranski-Krastanov mode, Volmer-Weber mode)가 있는데 각기 다른 adatom 과 surface의 adhesive force로 나누어지게 된다. 이 중 Volmer-Weber mode epitaxy는 adatom 의 cohesive force가 surface와의 adhesive force보다 큰 경우 성장 되는 방식으로 InAs NWs 는 이 방식을 이용한다. 즉 droplet을 이용하지 않는 vapour-solid (VS) 방법으로 성장을 하였다. 이 때 In 의 migration을 억제하기 위해서 VLS mode 의 GaAs NWs 보다 As의 공급을 10배 이상 하였다. FE-SEM 분석 결과 GaAs NWs는 Ga droplet을 확인 할 수 있었고 InAs NWs는 droplet이 존재하지 않았다. GaAs와 InAs NW는 density와 length가 V/III가 높을수록 증가 하였다.

• Journal of Sensor Science and Technology
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• v.23 no.4
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• pp.278-283
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• 2014

In this study, we propose an immunosensor using zinc oxide nanorods (NRs) inside PDMS channel for detecting the influenza A virus subtype H7N9. ZnO with high isoelectric point (IEP, ~9.5) makes it suitable for immobilizing proteins with low IEP. In this proposed H7N9 immunosensor structure ZnO NRs were grown on the PDMS channel inner surface to immobilize H7N9 capture antibody. A sandwich enzyme-linked immunosorbent assay (ELISA) method with was used 3,3',5,5' tetramethylbenzidine (TMB) for detecting H7N9 influenza virus. The immunosensor was evaluated by amperometry at various H7N9 influenza antigen concentrations (1 pg/ml - 1 ng/ml). The redox peak voltage and current were measured by amperometry with ZnO NWs and without ZnO NWs inside PDMS channel. The measurement results of the H7N9 immunosensor showed that oxidation peak current of TMB at 0.25 V logarithmically increased from 2.3 to 3.8 uA as the H7N9 influenza antigen concentration changed from 1 pg/ml to 1 ng/ml. And then we demonstrated that ZnO NRs inside PDMS channel can improve the sensitivity of immunosensor to compare non-ZnO NRs inside PDMS channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.291-291
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• 2011

1차원 반도체인 nanowires (NWs)는 전기적, 광학적으로 일반 bulk구조와 다른 특성을 가지고 있어서 현재 많은 연구가 되고 있다. 일반적으로 NWs는 Au 등의 금속 촉매를 이용하여 성장을 하게 되는데 이때 촉매가 오염물로 작용을 해서 결함을 만들어서 bandgap내에 defect level을 형성하게 된다. 본 연구는 Si(111) 기판 위에 Ga-droplet을 촉매로 사용을 하여 molecular beam epitaxy로 성장을 하였다. 성장온도는 600$^{\circ}C$로 고정을 하였고 growth rate은 GaAs(100) substrate에서 2.5 A/s로 Ga의 양을 고정하고 V/III ratio를 1부터 8까지 변화를 시켰다. As의 양에 따라서 생성되는 NWs의 개수가 증가하고 growth rate이 빨라지는 것을 확인할 수 있었다. Transmission Electron Microscopy 분석 결과 낮은 V/III ratio에서는 zincblende, wurtzite 그리고 stacking faults 가 혼재 되어 있는 것을 확인 할 수 있었다. 이러한 결함은 소자를 만드는데 한계가 있기 때문에 pure zincblende나 pure wurtzite를 가져야 하는데 V/III ratio : 8 에서 pure zincblende구조가 되었다. Gibbs-Thomson effect에 따르면 구조적 변화는 Ga droplet과 NWs의 접면에서 크기가 중요한 역할을 한다[1]. 연구 결과 V/III ratio : 8일 때 Ga droplet의 크기가 zincblende성장에 알맞다는 것을 예상할 수 있었다. laser confocal photoluminescence 결과 상온에서 1.43 eV의 bandgap을 가지는 bulk구조와는 다른 와 1.49eV의 bandgap을 가지는 것을 확인하였다.

• International Journal of Precision Engineering and Manufacturing-Green Technology
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• v.5 no.5
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• pp.643-650
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• 2018

A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.