• Korean Journal of Materials Research
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• v.6 no.2
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• pp.210-220
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• 1996

The purpose of this study is to develop the processing techniques of Fiber Reinforced Metal by Liquid Phase Diffusion Bonding method with SiC fiber as a reinforcing material and CP Ti(Commercial Pure) as a matrix. The microstructure and the distribution of elements in reaction and CP Ti(Commercial Pure) as a matrix. The microstructure and the distribution of elements is reaction zone among CP Ti/Ti-15wt%Cu-20wt%Ni(TCN20)/SiC long fiber were investigated by Optical Microscope, SEM/EDX, EPMA, X-ray and AES. The results obtained in this study are as follows. 1) When Ti matrix composite materials are fabricated under the bonding condition of 1273Kx1200sec, the SiC long fiber was the most suitable reinforcing material for Ti matrix composite materials. 2) With SiC long fiber under same condition, a TiC layer(1.0-1.6$\mu\textrm{m}$) was observed on the surface of SiC long fiber. 3) Liquid Phase Diffusion Bonding has shown the feasibility of production of Ti matrix composite materials.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.121-127
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• 2011

The mechanical properties of the various heat treatment conditions on Ti-15Mo-3Nb-3Al-0.2Si alloy plates were examined. XRD patterns from the surface of Ti-15Mo-3Nb-3Al-0.2Si were analyzed as a solution-treated Ti alloy has the single-phase ${\beta}$ structure whereas the aged Ti alloys have the ${\beta}$ matrix embedded with ${\alpha}$ needles. High strength (~1500 MPa) with decent ductility (7%) was obtained by the Ti alloy double aged at $300^{\circ}C$ and $520^{\circ}C$ for 8 hours each. The double-aged alloy exhibits the finer structure than the single-aged alloy at $300^{\circ}C$ for 8 hours because of the higher nucleation rate of ${\alpha}$ needles at an initial low aging temperature ($320^{\circ}C$). TEM observation revealed that the fine nanostructure with ${\alpha}$ needles in the ${\beta}$ matrix ensured the excellent mechanical properties in the double aged Ti-15Mo-3Nb-3Al-0.2Si alloy. In the solution treated alloy, the yield drop, stress-serrations and the ductility minimum typically associated with dynamic strain aging can be attributed to the dynamic interaction between dislocations and oxygen atoms. The yield drop and the stress serration were not observed in aged samples because the geometrically introduced dislocations due to phase precipitates suppressed the dynamic strain aging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.118-122
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• 2001

The ${\beta}-SiC+TiB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density is over 78.83% of the theoretical density and increased with increasing sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 140 MPa for composites sintered at $1900^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest of 4.07 GPa at $1900^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 4.07 $MPa{\cdot}m^{1/2}$ for composites at $1900^{\circ}C$. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

• Journal of the Korean Ceramic Society
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• v.49 no.4
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• pp.342-346
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• 2012

This work deals with the preparation of dense SiC based ceramics with high electrical conductivity without oxide sintering additives. SiC samples with different content of conductive Ti-NbC phase were hot pressed at $1850^{\circ}C$ for 1 h in Ar atmosphere under mechanical pressure of 30 MPa. The conductive phase is a mixture of Ti-NbC in weight ratio of Ti/NbC 1:4. Composite with 50% of conductive Ti-NbC phase showed the highest electrical conductivity of $30.6{\times}10^3\;S{\cdot}m^{-1}$, while the good mechanical properties of SiC matrix were preserved (fracture toughness 4.5 $MPa{\cdot}m^{1/2}$ and Vickers hardness 18.7 GPa). The obtained results show that use of NbC and Ti as sintering and also electrically conductive additives is appropriate for the preparation of SiC-based composite with sufficient electrical conductivity for electric discharge machining.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.835-838
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• 1992

The $TiN/TiSi_2$ bilayer has been studied for contact barrier layer at ULSI recently. The $TiN/TiSi_2$ bilayer was formed by RTA in $NH_3$ ambient simultaneously after the Ti film was deposited on silicon substrate. In this paper, properties of $TiN/TiSi_2$ bilayer was evaluated according to $BF_2$ dopant concentration and dopant redistribution in $TiN/TiSi_2$ bilayer was also analyzed. In this experiment, the composition and structure of $TiN/TiSi_2$ bilayer were constant even though dopant concentration increased but silicide growth rate decreased. Boron atoms were redistributed within TiN film and at $TiSi_2Si$ interface during the bilayer formation.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.657-663
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• 1993

BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

• Journal of Korea Foundry Society
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• v.27 no.3
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• pp.120-125
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• 2007

The microstructure, mechanical properties and melting range of Ni-Cr-Mo based alloys were investigated to develop Be-free Ni-Cr-Mo base dental alloys for Porcelain-Fused-to-Metal Firing(PFM). All as-cast alloys showed dendritic structure. Rockwell hardness of 20Cr7Mo was increased with addition of Si and Ti. On the contrary, it was decreased with addition of Co. The duplex alloying elemental addition such as 3Co + xTi, 2Si + xCo and 2Si + xTi to 20Cr7Mo resulted in much increase of hardness. Rockwell hardness and compressive strength for 20Cr3CoSiTi or 17Cr6CoSiTi alloy that add Si-Ti had similar values compared to the commercial alloys. Melting range for 20Cr3CoSiTi and 17Cr6CoSiTi alloy that add Si-Ti showed similar or lower than commercial alloys. In conclusion, 20Cr3CoSiTi and 17Cr6CoSiTi alloys can be applied for commercial use.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.55-60
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• 1994

Molecular orbital calculations at the extended Huckel level have been carried out for $Cp_2TiSiHPh(1),\;[Cp_2Ti]_2[{\mu}-HSi(HPh)][{\mu}-H] (2),\;and\;[Cp_2TiSiH_2Ph]_2$ (3) complexes which are important intermediates in organosilane polymerization. Stable geometry of complex 1 is not $C_{2V}$, but Cs symmetry and the rotational energy barrier of $SiH_2$ unit is computed to be 14 kcal/mol. The orbital interaction diagrams are studied to characterize the chemical bonding for the electron deficient systems, 2 and 3. It is possible for Si-H to be coordinated to the Ti metal using $\sigma$ bonding.

• Journal of the Korean Ceramic Society
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• v.28 no.9
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• pp.661-666
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were studied by varying cooling rates and additives such as TiO2, SiO2 and Al2O3. The basic composition of the BaTiO3 ceramics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Unlike the additives of SiO2 and Al2O3, an addition of 2 mol% TiO2 to the basic composition was effective to control the grain size of the fired specimens. The room temperature resistivity and the temperature coefficient of resistance for the specimen of this particular compostion were measured as about 102 ohm.cm and 16.5%/$^{\circ}C$, respectively. The observed grain boundary phase of the sample with Al2O3 additive was BaTi3O7, while that of the samples with SiO2 additive was confirmed as BaTiSiO5.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.