• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.831-835
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• 2013

In this study, we fabricated a micro $Pb(Zr,Ti)O_3$ (PZT) film piezoelectric cantilever with a Si proof mass and dual beams through MEMS process. The size of the beam and the integrated Si proof mass were about $4,320{\mu}m{\times}290{\mu}m{\times}12{\mu}m$ and $1,380{\mu}m{\times}880{\mu}m{\times}450{\mu}m$ each. To reduce the air damping and have the larger displacement of dual beams was used for design. After mounting micro PZT film piezoelectric cantilever on shaker, we measured the resonance frequency and a output voltage while making resonant frequency changed. The resonant frequency and the highest average power of the cantilever device were 110.2 Hz and 0.36 ${\mu}W$ each, at 0.8 g acceleration and 23.7 $k{\Omega}$ load resistance, respectively.

• Economic and Environmental Geology
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• v.31 no.2
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• pp.111-125
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• 1998

Dispersion, migration and enrichment of environmental toxic elements from the Samkwang Au-Ag mine area were investigated based upon major, minor and rare earth element geochemistry. The Samkwang mine area composed mainly of Precambrian granitic gneiss. The mine had been mined for gold and silver, but closed in 1996. According to the X-ray powder diffraction, mineral composition of stream sediments and soils were partly variable mineralogy, which are composed of quartz, orthoclase, plagioclase, amphibole, muscovite, biotite and chlorite, respectively. Major element variations of the host granitic gneiss, stream sediments and soils of mining and non-mining drainage, indicate that those compositions are decrese $Al_2O_3$, $Fe_2O_3$, MgO, $TiO_2$, $P_2O_5$ and LOI with increasing $SiO_2$ respectively. Average compositional ranges (ppm) of minor and/or environmental toxic elements within those samples are revealed as As=<2-4500, Cd=<1-24, Cu=6-117, Sb=1-29, Pb=17-1377 and Zn=32-938, which are extremely high concentrations of sediments from the mining drainage (As=2006, Cd=l1, Cu=71, Pb=587 and Zn=481 ppm, respectively) than concentrations of the other samples and host granitic gneiss. Major elements (average enrichment index=6.53) in all samples are mostly enriched, excepting $SiO_2$, $Na_2O$ and $K_2O$, normalized by composition of host granitic gneiss. Rare earth element (average enrichment index=2.34) are enriched with the sediments from the mining drainage. Minor and/or environmental toxic elements within all samples on the basis of host rock were strongly enriched of all elements (especially As, Br, Cu, Pb and Zn), excepting Ba, Cr, Rb and Sr. Average enrichment index of trace elements in all samples is 15.55 (sediments of mining drainage=37.33). Potentially toxic elements (As, Cd, Cr, Cu, Ni, Pb, and Zn) of the samples revealed that average enrichment index is 46.10 (sediments of mining drainage=80.20, sediments of nonmining drainage=5.35, sediments of confluent drainage=20.22, subsurface soils of mining drainage=7.97 and subsurface soils of non-mining drainage=4.15). Sediments and soils of highly concentrated toxic elements are contained some pyrite, arsenopyrite, sphalerite, galena and goethite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.118-121
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• 1999

PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1258_1259
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• 2009

염료감응형 태양전지 (dye-sensitized solar cell; DSC)는 경제성 한계에 달한 Si 태양전지를 대체할 수 있는 유력한 후보로서, 지금까지 많은 연구개발로 큰 효율향상을 기록했다. 다양한 연구 분야 중에서도, 투명전도성 막과 전해질 층간의 접촉으로 발생하는 전자의 재결합을 막기 위해 삽입하는 compact layer는 ZnO dip-coating, $TiCl_4$ dip-coating, Ti sputtering 등 다양한 제조방법이 제시되었다. 본 연구에서는 $TiCl_4$ 용액을 이용해 spin-coating 방법으로 $TiO_2$ compact layer를 제조하는 시도를 했다. 기존 dip-coating 방법과의 비교를 통해서 본 연구의 spin-coating 방법에 의한 효과를 확인한 결과, standard DSC 대비 33.4%, dip-coating 방법으로 compact layer를 삽입한 DSC 대비 6%의 효율 향상을 기록했다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1041-1042
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• 2006

High heat-resistant Al-Fe-V-Si and Al-Fe-V-Si-X rapidly solidified powder metallurgy (RS P/M) alloys have been developed under well-controlled high purity argon gas atmosphere. The $Al_{90.49}Fe_{6.45}V_{0.68}Si_{2.38}$ (at. %) RS P/M alloy exhibited high elevated-temperature strength exceeding 300 MPa and good ductility with elongation of 6 % at 573 K. Reduction of $H_2O$ partical pressure in P/M processing atmosphere led to improvement in mechanical properties of the powder-consolidated alloys under elevated-temperature service conditions. Ti addition to the Al-Fe-V-Si conduced to enhancement of the strength at room temperature. The tensile yeild strength and ultimate strenght were 545 MPa and 722 MPa, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.206-212
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• 1994

Aluminium titanate-mullite composites with varying chemical compositions were prepared by the stepwise hydrolysis of $Si(OC_2H_5)_4$, and $Ti(OC_2H_5)_4$in $AI_2O_3$ ethanolic colloidal dispersion. Sintered bodies having 20-50~01% mullite at $1600^{\circ}C$ for 2h have shown, that it is possible to develop an aluminium titanate with moderately high strength and low thermal expansion coefficient. This was obtained by inhibiting grain site of aluminium titanate with mullite and microcracks. Those with 80-70vol % aluminium titanate have excellent thermal shock resistance and has room-temperature strengths of 31-45MPa. The relation between thermal shock resistance and strength, Young's modulus, sound velocity and thermal expansion coefficient was discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.108.1-108.1
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• 2010

분류층 가스화기는 석탄과 산소(공기) 및 수증기가 반응하여 $1200{\sim}1600^{\circ}C$의 고온, 20~60기압의 고압에서 작동되어 합성가스를 생성하며 합성가스에 포함된 입자 및 황화합물 등을 정제설비를 통하여 정제 후 발전 및 화학원료로 사용한다. 석탄가스화 중 석탄에 포함된 대부분의 회분은 용융슬래그 형태로 가스화기 벽면을 따라 흘러 내려 가스화기 하부의 냉각수조에서 급랭되어 배출된다. 이때 용융슬래그의 원활한 배출을 위해서는 일정범위의 점도를 유지하는 것이 필요하다. 슬래그의 점도는 가스화기 온도 및 Ash의 조성에 따라 크게 변하며 가스화기 설계 및 운전 시 매우 중요한 변수이다. 따라서 최적의 설계 및 운전을 위해서는 Ash의 점도예측이 중요하며, 분류층 가스화기내부에서 Ash 점도 예측을 위한 DooVisco 프로그램을 개발하였다. DooVisco는 가스화기 내부에서 슬래그 용융온도 및 온도별 점도, 가스화기 최소 운전온도 및 석회석 투입 효과 분석뿐만 아니라 석탄의 혼합 사용 시의 특성 예측도 가능하도록 개발되었다. DooVisco는 슬래그 주요 4성분인 SiO2, Al2O3, CaO, FeO 성분에 대한 Phase Diagram을 이용하여 1차적으로 슬래그용융온도(Liquidus Temperature)를 예측하고, 주요 4 성분 외에 Na2O, MgO, K2O, TiO2 등을 고려한 Kalmanovich Model을 이용하여 점도를 예측한다. 최종적으로 슬래그 용융온도와 점도를 활용하여 분류층 가스화기 운전가능 온도범위를 예측한다. 개발된 DooVisco를 활용하여 300MW급 실증 IGCC 플랜트에 사용가능성이 있는 석탄을 대상으로 슬래그의 용융온도 및 점도 등을 예측하였으며 최적 운전을 위한 슬form점도 조절용 Flux인 석회석 투입량 등을 평가하였다. 평가 결과 슬래그 용융온도가 $1700^{\circ}C$ 이상으로 석회석 투입이 필요하다고 판단되었다. 약 가스화기 내부 온도를 $1500^{\circ}C$ 정도에서 원활한 운전을 위해서는 석탄 대비 약 10% 내외의 석회석 투입이 필요할 것으로 평가되었다. DooVisco는 분류층 가스화기 설 계시 가스화기 최적 운전 온도 설정 및 Flux 투입필요성, 종류, 투입량 선정에 활용될 수 있을 뿐만 아니라 플랜트 운전시 석탄의 탄종 적합성 등을 판단하는데 활용될 수 있을 것이라 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.723-727
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.