• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.591-592
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• 2005

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M\Omega$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• 한국결정성장학회지
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• 제19권2호
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• pp.70-74
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• 2009

Sol-gel 법으로 제조한 $Pb(Sc_{1/2}Nb_{1/2})O_3$(이하 PSN) sol을 이용하여 스핀 코팅법으로 Pt(111)/Ti/$SiO_2$/Si 기판위에 제조한 박막의 제조 공정에 따른 영향을 연구하였다. Pt 기판위에 PSN sol을 증착, 건조한 후에 $370^{\circ}C$에서 5분간 열처리를 행한 후 $10^{\circ}C/sec$의 급속 가열로 $600{\sim}700^{\circ}C$에서 최종 열처리한 경우에 박막은 (111)면으로 우선 배향하는 것으로 나타났다. 그러나 중간 열처리를 거치지 않고, 급속가열에 의한 최종 열처리만을 행한 경우에는 (100)면으로 우선 배향하는 것으로 나타났다. 한편, 중간 열처리 후 $4^{\circ}C/min$의 승온속도로 관상로에서 최종 열처리를 행한 경우에는 (111)면과 (100)면이 동시에 나타나는 것으로 나타났다. 동일한 조건하에서 박막의 두께는 모두 300로 중간 열처리 공정이 어떠한 영향도 미치지 않는 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.465-470
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• 2020

Heterolayered K(Ta,Nb)O₃/Pb(Zr,Ti)O₃ thin films on Pt/Ti/SiO₂/Si substrates were prepared by a sol-gel process and spin-coating method. The structural and electrical properties were measured to investigate the possibility of application as an electrocaloric effect device. All specimens exhibited dense and uniform cross-sectional structures without pores, and the average thickness of the specimen coated six times was approximately 394 nm. Curie temperatures were observed at 5℃ or less in type-I and 10℃ in type-II specimens, respectively. Type-II specimens coated 6 times showed a relative dielectric constant of 758 and remanent polarization of 9.71 μC/㎠ at room temperature. The maximum electrocaloric effect occurred between 20 and 25℃, slightly higher than their Curie temperature, and the electrocaloric property (ΔT) of the type-II specimens coated 6 times was approximately 1.2℃ at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• 한국세라믹학회지
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• 제33권10호
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• 한국전기전자재료학회논문지
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• 제17권1호
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.796-801
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• 2001

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the solid-state reaction method, and especially PZT(90/10) and PZT(10/90) powders were derived by the sol-gel method. All specimens showed a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increased in sintering temperature, the values for the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 14.4$\mu$m and 9.8$\mu$m, respectively. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247. 2.06%, respectively. The coercive field and the remanent polarization of x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 8.5kV/cm, 13$\mu$C/$\textrm{cm}^2$ and 17.2kV/cm, 28 $\mu$C/$\textrm{cm}^2$, respectively. The pyroelectric coefficient of the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 5.64$\times$10$^{-8}$ C/$\textrm{cm}^2$K and 2.76$\times$10$^{-8}$ C/$\textrm{cm}^2$K, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.543-546
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• 2000

Ferroeleclric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4$\mu$m. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.06%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively. The pyroelectric coefficient of the x=0.65 specimen sintered at 125$0^{\circ}C$ was 5.64$\times$10$^{-8}$ C/cm$^2$K, respectively.