• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.413-419
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• 2002

Particulate composites of $Al_2O_3$/TiC/SiC, $Al_2O_3$/TiC and $Al_2O_3$/SiC have been fabricated by hot pressing and their R-curve behaviors and mechanical properties were investigated. $Al_2O_3$ containing 30 vol% TiC particles showed higher toughness by 8% than that for monolithic alumina and its fracture strength was increased significantly by approximately 30%. On the other hand, the addition of 30 vol% SiC of $3{\mu}m$ in $Al_2O_3$ decreased the fracture strength slightly but induced a rising R-curve behavior owing to the strong crack bridging of SiC particles. In case of $Al_2O_3$/TiC/SiC, arising R-curve behavior was also observed and the fracture toughness reached 6.6 MPa${\cdot}\sqrt{m}$ at the crack length of $1000{\mu}m$, which was lower than that of $Al_2O_3$/SiC, however, while the fracture strength was higher by about 20%. The fracture toughness seemed to be decreased as smaller TiC particles roughened the SiC interface and pullout of the SiC particles for crack bridging became less active.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.275-285
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• 1996

The effect of heat-treatment on catalytic crystallization in $LI_2O-Al_2O_3-SiO_2$ glass system over its glass transition temperature was investigated. Glass composition $4Li_2O{cdot}22AL_2O_3{cdot}66SiO_2{cdot}2TiO_2{cdot}2.5ZrO_2{cdot}1.5P_2O_5{cdot}1.0Na_2O{cdot}1.0As_2O_3$ (wt%) was selected and heat-treated at different heating conditions to obtain transparent glass-ceramic. Nucleation and crystallization behaviour of this composition were estimated by differential thermal analysis (DTA) and X-ray diffractometer (XRD) and its thermal expansion coefficients were measured by Dilatometer. As a result, glass transition temperature was $730^{\circ}C$ and two maximum nucleation temperatures were estimated at $730^{\circ}C$ and 82$0^{\circ}C$ using JMA(Johson-Mehl-Avrami) equation by DTA. $ZrTiO_4$ $\beta$-Quartz solid solution and $\beta$-Spodumene crystals were identified by XRD. The optimum crystallization temperature was 92$0^{\circ}C$ and three step heating schedule was expected to be useful to obtain transparent glass-ceramic.

• Journal of the Korean Society of Safety
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• v.21 no.2 s.74
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• pp.35-45
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• 2006

Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.4
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• pp.451-463
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• 2004

The performance of disk-type catalytic filters impregnated by TiO$_2$ or TiO$_2$-3Al$_2$O$_3$ㆍ 2SiO$_2$ supports and V$_2$O$_{5}$ catalyst was evaluated for selective catalytic reduction (SCR) of NO with ammonia as a reductant. XRD, FT -IR, BET and SEM were used to characterize the catalytic filters prepared in this work. Optimal V$_2$O$_{5}$ loading and reaction temperature for V$_2$O$_{5}$/TiO$_2$ catalytic filters were 3-6 wt.% and 350-40$0^{\circ}C$ at GHSV 14,300 $hr^{-1}$ in the presence of oxygen, respectively. With increasing the V$_2$O$_{5}$ loading from 0.5 to 6 wt%, NO conversion increased from 24 to 96% at 40$0^{\circ}C$ and 14.300$hr^{-1}$, and maintained at 80% over in the V$_2$O$_{5}$ loading range of 3-6 wt.% and then dropped at V$_2$O$_{5}$ loading of 7wt.% over. In comparing V$_2$O$_{5}$/ TiO$_2$ and V$_2$O$_{5}$/ TiO$_2$-3Al$_2$O$_3$ㆍ2SiO$_2$ catalytic fillers, which have same 3wt.% V$_2$O$_{5}$ loading, the V$_2$O$_{5}$/ TiO$_2$-3A1$_2$O$_3$ㆍ2SiO$_2$ catalytic filter showed higher activity than V$_2$O$_{5}$/ TiO$_2$ catalytic filter, but higher differential pressure drops owing to its low air permeability. low air permeability.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.808-815
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at 1650[$^{\circ}C$] for 4 hours. The present study investigated the influence of the content of $Al_2O_3+Y_2O_3$ sintering additives on the microstructure, mechanical and electrical properties of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), ${\beta}$-SiC(3C), $TiB_2$, and In Situ YAG($Al_2Y_3O_{12}$). The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. There is another reason which pressureless annealed temperature 1650[$^{\circ}C$] is lower $300{\sim}450[^{\circ}C]$ than applied pressure sintering temperature $1950{\sim}2100[^{\circ}C]$. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[Mpa], 54.60[Gpa] and 2.84[Gpa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. Abnormal grain growth takes place during phase transformation from ${\beta}$-SiC into ${\alpha}$-SiC was correlated with In Situ YAG phase by reaction between $Al_2O_3$ and $Y_2O_3$ additive during sintering. The electrical resistivity showed the lowest value of 0.0117[${\Omega}{\cdot}cm$] for 16[wt%] $Al_2O_3+Y_2O_3$ additives at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from $25^{\circ}C$ to 700[$^{\circ}C$]. The resistance temperature coefficient of composite showed the lowest value of $-2.3{\times}10^{-3}[^{\circ}C]^{-1}$ for 16[wt%] additives in the temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$].

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.15-18
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• 2001

The composites were fabricated 61 vol% $\beta$-SiC and $39vol%TiB_2$ powders with the liquid forming additives of 8, 12, 16wt% $Al_2O_3+Y_2O_3$ by hot pressing at $1730^{\circ}C$ and subsequent pressed annealing and pressureless annealing at $1750^{\circ}C$ for 4 hours to form YAG. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents. The fracture toughness showed the highest value of $7.77MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest of $7.3{\times}10^{-4}{\Omega}{\cdot}cm$ and $3.8{\times}10^{-3}/^{\circ}C$, respectively, for composite added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.72-75
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• 2000

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering were investigated, The ${\beta}-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 4, 8, 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 97% of the theoretical density and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. But the fracture toughness showed the highest of $7.0MPa{\cdot}m^{1/2}$ for composites added with 12wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest of $1.59\times10^{-3}\Omega{\cdot}cm$ for composite added with 8wt% $Al_2O_3+Y_2O_3$ additives at room temperature and is all positive temperature coefficient resistance(PTCR} against temperature up to $700^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.479-481
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• 2000

The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.6
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• pp.263-270
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• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.