• 제목/요약/키워드: $TiO_2(x_1)$

검색결과 1,261건 처리시간 0.039초

Synthesis of Magnetic Sonophotocatalyst and its Enhanced Biodegradability of Organophosphate Pesticide

  • Lirong, Meng;Jianjun, Shi;Ming, Zhao;Jie, He
    • Bulletin of the Korean Chemical Society
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    • 제35권12호
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    • pp.3521-3526
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    • 2014
  • A magnetic sonophotocatalyst $Fe_3O_4@SiO_2@TiO_2$ is synthesized for the enhanced biodegradability of organophosphate pesticide. The as-prepared catalysts were characterized using different techniques, such as X-ray diffraction (XRD) and transmission electron microscopy (TEM). The radial sonophotocatalytic activity of $Fe_3O_4@SiO_2@TiO_2$ nanocomposite was investigated, in which commercial dichlorvos (DDVP) was chosen as an object. The degradation efficiency was evaluated in terms of chemical oxygen demand (COD) and enhancement of biodegradability. The effect of different factors, such as reaction time, pH, the added amount of catalyst on $COD_{Cr}$ removal efficiency were investigated. The average $COD_{Cr}$ removal efficiency reached 63.13% after 240 min in 12 L sonophotocatalytic reactor (catalyst $0.2gL^{-1}$, pH 7.3). The synergistic effect occurs in the combined sonolysis and photocatalysis which is proved by the significant improvement in $COD_{Cr}$ removal efficiency compared with that of solo photocatalysis. Under this experimental condition, the $BOD_5/COD_{Cr}$ ratio rose from 0.131 to 0.411, showing a remarkable improvement in biodegradability. These results showed that sonophotocatalysis may be applied as pre-treatment of pesticide wastewater, and then for biological treatment. The synthesized magnetic nanocomposite had good photocatalytic performance and stability, as when it was used for the fifth time, the $COD_{Cr}$ removal efficiency was still about 62.38%.

란탄족 이온이 도핑된 Ti-SBA-15의 합성 및 그들의 광촉매 활성 (Synthesis of Ti-SBA-15 Doped with Lanthanide Ions and Their Photocatalytic Activity)

  • 홍성수
    • 청정기술
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    • 제26권1호
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    • pp.7-12
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    • 2020
  • 란탄족 이온이 도핑된 Ti-SBA-15 촉매를 수열합성법으로 제조하였다. 또한 이들의 특성을 X선 회절기(X-ray diffraction, XRD), Fourier-transform infrared spectroscopy (FT-IR), Diffuse reflectance spectroscopy (DRS), 가스흡착법(Brunauer-Emmett-Teller, BET) 및 Photoluminescence spectrometer (PL) 등을 이용하여 조사하였고, 이 촉매를 사용하여 자외선 조사하에서 메틸렌블루에 대한 광분해 반응성을 조사하였다. 란탄족 이온이 도핑과 무관하게 Ti-SBA-15 촉매는 메조동공체 구조를 유지하고 있으며, 란탄족 이온이 치환됨에 따라 기공의 크기와 기공의 부피가 줄어들었으며 표면적은 오히려 증가하였다. 란탄족 이온의 도핑과 무관하게 전체적으로 IV형의 흡착등온선과 H2형 히스테리시스를 보여주고 있으나, 란탄족 이온이 도핑되면 히스테리시스의 크기가 커지는 것을 볼 수 있다. 란탄족 이온의 도핑과 무관하게 가시광 영역에서의 흡수밴드는 나타나지 않으며 220 nm에서 다소 폭이 넓은 흡수피크가 나타나고 있다. 이것은 SBA-15 골격 내에 Ti가 존재한다는 것을 의미하고 있다. 메틸렌블루의 광분해 반응에서 Pr 이온을 첨가 시킨 것이 가장 높은 광촉매 활성을 보여주었으며, Er, Eu 및 Nd 등의 란탄족 이온이 치환되면 순수한 Ti-SBA-15 촉매보다 오히려 활성이 떨어진 것을 볼 수 있다. 모든 촉매들은 410 nm 부근에서 강하고 넓은 PL 흡수밴드가 나타났으며, 이 피크의 세기가 커질수록 광분해 활성이 증가하는 것으로 나타났다.

고출력 압전 디바이스 응용을 위한 PZ-PT-PMN계 압전 세라믹의 특성 (The Characteristics of PZ-PT-PWN Piezoelectric Ceramics for Application to High Power Device)

  • 정수현;홍종국;이종섭;채홍인;윤만순;임기조
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권3호
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    • pp.155-160
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    • 2000
  • The piezoelectric properties and the doping effect for$0.95Pb(Zr_xTi_{1-x})O_3+0.05Pb(Mn1/3Nb2/3)O_3$ compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the values of kp and $\varepsilon33T$ were maximized, but Qm was minimized(Kp=0.57, Qm=1550) in the composition of x=0.51. In order to increase the values of Qm $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of kp decreased, and the values of Qm increased with doping concentration of $Nb_2O_5$. As a experiment results under high electric field driving, when vibration velocity was lower than 0.6[m/s], the temperature increase was $20[^{\circ}C]$, and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

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Phase Evolution Behavior of (Bi,Nd)(Fe,Ti)$O_3$ Ceramics and Thin Films

  • Kim, Kyung-Man;Byun, Seung-Hyun;Yang, Pan;Lee, Yoon-Ho;Lee, Jai-Yeoul;Lee, Hee-Young
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.331-332
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    • 2008
  • Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

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PSNI-PZT계 세라믹스의 유전적, 압전적 특성에 관한 연구 (A study on the Dielectric and piezoelectric characteristic of PSN-PZT system ceramics)

  • 이용우;류주현;윤광희;정회승;김종선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.260-264
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    • 1999
  • In this paper, the structural, dielectrial and piezoelectrical properties of 0.03Pb(Sb$\sub$1/2/Ti$\sub$0.495/)O$_3$+Xwt% MnO(x= 0, 0.3, 0.4, 0.5, 0.7) system ceramics were investigated as a function of the addition of MnO. As a result, the samples of 0.3wt% MnO content showed the highest mechanical quality factor(Qm) of 1487, and its dielectric constant and electro mechanical coupling factor(Kp) 1357, 54.3%, respectively. Therefore, the dielectrial and piezoelectrical properties of the composition ceramics were indicated as the materials suitable for piezoelectric transformer.

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$SiN_x/Si$ 기판에 제조된 후막 PZT의 횡 압전 계수 $(e_{31,f})$ 측정 (Measurement of Effective Transverse Piezoelectric Coefficients $(e_{31,f})$ of Fabricated Thick PZT Films on $SiN_x/Si$ Substrates)

  • 전창성;박준식;이상렬;강성군;이낙규;나경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.965-968
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    • 2004
  • Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

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스크린 인쇄법에 의해 제조한 PMW-PZT 후막의 특성 (Characterization of PMW-PZT Thick Films Prepared by Screen Printing Method)

  • 손진호;김용범;천채일;유광수;김태송
    • 한국세라믹학회지
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    • 제41권1호
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    • pp.30-35
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    • 2004
  • 스크린 인쇄법 및 PZT sol 처리의 복합공정을 적용하여 $30{\mu}m$ 두께의 PMW-PZT 후막을 Pt/$TiO_2$/$SiN_x$Si 기판위에 제작하였다. 그 결과 PZT sol 처리 횟수가 증가함에 따라 후막의 소결 밀도가 증가하고 전기적, 압전 특성의 증진되는 것을 관찰할 수 있었다. $800^{\circ}C$에서 소결한 10회 sol 처리한 PMW-PZT 후막은 745의 유전상수 및 155 pC/N의 $d_33$ 값을 나타내었다.

SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향 (Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films)

  • 장재훈;이동근;이희영;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.723-727
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

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SBN 박막의 결정화 및 전기적 특성에 관한 씨앗층 두께의 영향 (Effect of Seed-layer thickness on the Crystallization and Electric Properties of SBN Thin Films.)

  • 장재훈;이동근;이희영;조상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.271-274
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

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첨가제에 의한 PWM-PSN-PZT계 세라믹의 유전특성에 관한 연구 (A study on the dielectric characteristics of PWM-PSN-PZT ceramics with additive)

  • 신혜경;송현재;김유신;배선기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.107-109
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    • 2003
  • This paper was to measure the structure, piezoelectric properties of $0.03Pb(Mg_{0.5}W_{0.5})O_3$ - $0.12Pb(Sb_{0.5}Nb_{0.5})O_3$ - $0.85Pb(Zr_{0.52}Ti_{0.48})O_3$ + $0.5[wt%]MnO_2$ ceramics dropped with additive CuO after manufacturing the specimens with a general method. It is shown that X-ray diffraction pattern variation of lines (211) have tendency to move minutely by addition of additive CuO. According to dropping with Cu, the dielectric constant at 20[$^{\circ}C$] reduced to CuO 3.0[wt%]. In case of sintering at 1050[$^{\circ}C$], dielectric constant was maximum value 623.59 at CuO 1.0[wt%]. Dielectric loss was maximum value 2.7[%] at Cu 2.0[wt%] in case of sintering at 1050[$^{\circ}C$].

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