• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.9
• /
• pp.731-735
• /
• 2001

S $r_{0.89}$B $i_{2.4}$T $a_2$ $O_{9}$ (SBT) thin films are deposited on Pt-coated electrode(Pt/Ti $O_2$/ $SiO_2$/Si) using RF magnetron sputtering method. In the XRD pattern, the SBT thin films had (105) orientation. As annealing temperature was increased from $600^{\circ}C$ to 85$0^{\circ}C$, the intensities of peak were increased. In the SEM images, Bi-layered perovskite phase was crystallized above $650^{\circ}C$ and rod-like grains grew above 75$0^{\circ}C$. The maximum remanent polarization and the coercive electric field at annealing temperature of 75$0^{\circ}C$ are 11.60$\mu$C/$\textrm{cm}^2$ and 48kV/cm respectively. The dielectric constant and leakage current density at annealing temperature of 75$0^{\circ}C$ are 213 and 1.01x10$^{-8}$ A/$\textrm{cm}^2$, respectively. The fatigue characteristics of SBT thin filmsdid not change up to 10$^{10}$ switching cycles.s.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05b
• /
• pp.8-11
• /
• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.03b
• /
• pp.7-7
• /
• 2010

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The frequency dependence of dielectric loss showed a value within 0.03 in frequency ranges of 1~1000[kHz].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.319-320
• /
• 2008

본 연구에서는 대기압하에서 고품질의 산화막 증착을 목적으로 TEOS(Tetraethyl Orthosilicate)를 이용하여 APCVD법(Atmospheric Pressure CVD)으로 실리콘 산화막을 증착하고 하였으며, 특성 비교를 위하여 ICP-CVD를 이용하여 $SiH_4$ 와 $N_2O$ source gas를 이용하여 산화막을 증착하였다. 트랜지스터 제작후 Semiconductor measurement system을 이용하여 TFT의 전기적 특성을 측정 하였으며, 결과적으로 유기 사일렌을 사용한 경우 보다 우수한 전기적 특성을 확인할 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.41-44
• /
• 1998

Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.

• Korean Journal of Materials Research
• /
• v.7 no.9
• /
• pp.811-823
• /
• 1997

차세대 반도체 배선분야에서, Cu박막은 현재의 AI을 대체할 물질로서 대두되고 있으며 CVD에 의한 선택적 증착은 Cu의 patterning과 관련하여 상당한 관심을 일으키고 있다. 본 연구에서는 (hfac)Cu(VTMS)의 유기원료를 사용하여, CVD공정변수, 운반기체, 표면 처리 공정에 따른 SiO$_{2}$, TiN, AI기판에 대한 선택성을조사하였다. 선택성은 저온(15$0^{\circ}C$), 저합(0.3Torr)에서 향상될 수 있었으며, 특히, HMDS in-situ-predosing공정에 의해 더욱 향상될 수 있었다. 모든 경우에 대해, H$_{2}$운반기체가 Ar 보다 짧은 incubation time과 높은 증착 속도가 얻어졌으며, Cu입자들의 크기가 작고 연결상태가 보다 양호하였다. 이는 H$_{2}$경우에 기판표면에 원료가 흡착되어 핵을 형성시키는 위치 (-OH)가 보다 많이 제공되기 때문으로 여겨진다. 이러한 미세구조의 차이는 H$_{2}$경우에 보다 낮은 비저항을 얻게 했다. HMDS in-situ predosing공정에 의한 Cu박막내 불순물 차이는 없었으며 뚜렷한 비저항의 차이도 나타나지 않았다.

• Electrical & Electronic Materials
• /
• v.10 no.10
• /
• pp.983-988
• /
• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.370-375
• /
• 2001

PZT thin films (3500${\AA}$) ahve been prepared onto Pt/Ti/corning glass (1737) substrates with a RF magnetron sputtering system using Pb$\sub$1.50/(Zr$\sub$0.52/,Ti$\sub$0.48)O$_3$ ceramic target. We used two-step annealing techniques, PZT thin films were grown at a 300$^{\circ}C$ substrate temperature and then subjected to an RTA treatment. In case of 500$^{\circ}C$ RTA temperature show pyrochlore phase. The formation of Perovskite phase started above 600$^{\circ}C$ and PZT thin films generated (101) preferred orientation. As the RTA time and temperature increased, crystallization of PZT films were enhanced. The PZT capacitors fabricated at 650$^{\circ}C$ for 10 minutes RTA treatment showed remanent polarization 30 ${\mu}$C/$\textrm{cm}^2$, saturation polarization 42${\mu}$C/$\textrm{cm}^2$, coercive field 110kV/cm, leakage current density 2.83x10$\^$-7/A/$\textrm{cm}^2$, remanent polarization were decreased by 30% after 10$\^$9/ cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.329-332
• /
• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.26 no.6
• /
• pp.1001-1007
• /
• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.