• 제목/요약/키워드: $TiN_x$

검색결과 663건 처리시간 0.028초

Tribological Behavior of Multilayered WC-Ti1-xAlxN Coatings Deposited by Cathodic Arc Deposition Process on High Speed Steel

  • Kim, Jung Gu;Hwang, Woon Suk
    • Corrosion Science and Technology
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    • 제5권2호
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    • pp.52-61
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    • 2006
  • Recently, much of the current development in surface modification engineering are focused on multilayered coatings. Multilayered coatings have the potential to improve the tribological properties. Four different multilayered coatings were deposited on AISI D2 steel. The prepared samples are designed as $WC-Ti_{0.6}Al_{0.4}N$, $WC-Ti_{0.53}Al_{0.47}N$, $WC-Ti_{0.5}Al_{0.5}N$ and $WC-Ti_{0.43}Al_{0.57}N$. The multilayered coatings were investigated with respect to coating surface and cross-sectional morphology, roughness, adhesion, hardness, porosity and tribological behavior. Especially, wear tests of four multilayered coatings were performed by using a ball-on-disc configuration with a linear sliding speed of 0.017 m/sec, 5.38 N load. The tests were carried out at room temperature in air by employing AISI 52100 steel ball ($H_R=66$) having a diameter of 10 mm. The surface morphology, and topography of the wear scars of samples and balls have been determined by using scanning electron spectroscopy (SEM). Results have showed an improved wear resistance of the $WC-Ti_{1-x}Al_xN$ coatings with increasing of Al concentration. $WC-Ti_{0.43}Al_{0.57}N$ coating with the lower surface roughness and porosity with good adhesion enhanced wear resistance.

DC Magnetron Sputtering법으로 제작한 Ti$_{x}$N박박의 부식특성에 미치는 코팅조건과 첨가원소의 영향 (Effects of Coating and Additivw Gases on the corrosion Properties of Ti$_{x}$N Films Preapered with DC Magneton Sputtering Method)

  • 김학동;이봉상;조성석
    • 한국표면공학회지
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    • 제31권5호
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    • pp.251-260
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    • 1998
  • Stainless Steel is being used widely for various purposes due to its good corrosion resistance. There have been many researches to produce colored stainless steel by several methods such as anodizing and ion-plating. In this experiment, we $Ti_XN$(C,O) on the films SUS304, aluminium, and glass substrates with DC magentron sputterinng system made by Leybold Hereus, and strdied the structur, corrsion and pit characture of the TiXN observed by TeM image was black and whink and white columnar hed a very fine(200$\AA$) dense sturcture,and the diffraction resistance at the $3{\times}10_6A/\textrm{cm}^2$ and $10_{10}\times{cm}^2$current density were obtained in the under-stoichiometry $Ti_xN$ compound of Ar/$N_2$(Ar:$N_2$=100:6, titanium-rich compound) and the over-stoichiometry compound of Ar/$N_2$((Ar:$N_2$=60:15) respectively. When the thiness was over 1.64$\mu\textrm{m}$, good pit resistance could be obtained and its improvement was especially affected by perfect surfaceface. Typical TiN anodic polarzation curves of very unstable corrosion were observed by $Ti_xN$ film on the glass and perfect film of 3.28$\mu\textrm{m}$ thickness.

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$NO_x$ Chemistry Over Rutile $TiO_2$(110) Surfaces

  • 김유권
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.131-131
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    • 2012
  • We present our recent temperature-programmed desorption (TPD) study on catalytic reductions of $NO_x$ such as NO, $NO_2$, and $N_2O$ over rutile $TiO_2$(110) surfaces. Our results indicate that $NO_2$/NO readily reacts to give NO/$N_2O$ desorption at the substrate temperature as low as 100 K/70 K. Interestingly, $N_2O$, however, does not dissociate into $N_2$ and $O_{BBO}$ over the oxygen vacancy on the $TiO_2$(110) surface. Successive reduction of NO and $NO_2$ into $N_2O$ and NO, respectively, leaves oxygen atoms on the $TiO_2$(110) surface in a form of $O_{ad}$, which can induce additional reductive channels of NO and $NO_2$ at higher temperatures up to 400 K. During the repeated TPD cycles of $NO_x$, our x-ray photoelectron spectroscopy (XPS) analysis indicates that no N atom accumulates on the $TiO_2$ surface.

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소결 분위기가 $(1-x)CaTiO_3-xLaAlO_3$계의 마이크로파 유전특성에 미치는 영향 (The Effect of Sintering Atmosphere on the Microwave Dielectric Properties of $(1-x)CaTiO_3-xLaAlO_3$ System)

  • 여동훈;김현재;문종하
    • 한국세라믹학회지
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    • 제34권5호
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    • pp.505-511
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    • 1997
  • The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

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Evaluation of antibacterial activity and osteoblast-like cell viability of TiN, ZrN and $(Ti_{1-x}Zr_x)N$ coating on titanium

  • Ji, Min-Kyung;Park, Sang-Won;Lee, Kwangmin;Kang, In-Chol;Yun, Kwi-Dug;Kim, Hyun-Seung;Lim, Hyun-Pil
    • The Journal of Advanced Prosthodontics
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    • 제7권2호
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    • pp.166-171
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    • 2015
  • PURPOSE. The aim of this study was to evaluate antibacterial activity and osteoblast-like cell viability according to the ratio of titanium nitride and zirconium nitride coating on commercially pure titanium using an arc ion plating system. MATERIALS AND METHODS. Polished titanium surfaces were used as controls. Surface topography was observed by scanning electron microscopy, and surface roughness was measured using a two-dimensional contact stylus profilometer. Antibacterial activity was evaluated against Streptococcus mutans and Porphyromonas gingivalis with the colony-forming unit assay. Cell compatibility, mRNA expression, and morphology related to human osteoblast-like cells (MG-63) on the coated specimens were determined by the XTT assay and reverse transcriptase-polymerase chain reaction. RESULTS. The number of S. mutans colonies on the TiN, ZrN and $(Ti_{1-x}Zr_x)N$ coated surface decreased significantly compared to those on the non-coated titanium surface (P<0.05). CONCLUSION. The number of P. gingivalis colonies on all surfaces showed no significant differences. TiN, ZrN and $(Ti_{1-x}Zr_x)N$ coated titanium showed antibacterial activity against S. mutans related to initial biofilm formation but not P. gingivalis associated with advanced periimplantitis, and did not influence osteoblast-like cell viability.

BCl3/He 유도결합 플라즈마를 이용한 TiN 박막의 식각 특성 (Dry Etching Characteristics of TiN Thin Films in BCl3/He Inductively Coupled Plasma)

  • 주영희;우종창;김창일
    • 한국전기전자재료학회논문지
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    • 제25권9호
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    • pp.681-685
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    • 2012
  • We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

Effect of Secondary Carbide Addition on Properties of $Ti(C_{0.7}N_{0.3})-Ni$ Cermets

  • Ahn, S.;Kim, H.;Kang, S.
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.107-108
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    • 2006
  • The effect of WC or NbC addition on various properties of Ti(C0.7N0.3)-Ni cermets was investigated. The microstructure oj Ti(C0.7N0.3)-xWC-20Ni showed a typical core/rim structure, irrespective of the WC content, whereas the structure oj Ti(C0.7N0.3)-xNbC-20Ni was different and was dependent on the NbC content. The hardness (HV) and the fracture toughness (KIC) had a tendency to increase marginally, while the coercive force (HC) and the magnetic saturation $(4{\pi}{\sigma})$ decreased gradually with an increase in WC or NbC content in the systems studied. In addition, increasing WC content in Ti(C0.7N0.3)-xWC-20Ni system, decarburization was retarded, while denitrification was accelerated

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NiPt/Co/TiN을 이용한 Ni Germanosilicide 의 열안정성 향상 및 Ge 비율 (x) 에 따른 특성 분석 (Thermal Stability Improvement or Ni Germanosilicide Using NiPt/Co/TiN and the Effect of Ge Fraction (x) in $Si_{l-x}Ge_x$)

  • 윤장근;오순영;황빈봉;김용진;지희환;김용구;차한섭;허상범;이종근;왕진석;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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    • pp.391-394
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    • 2004
  • In this study, highly thermal stable Ni Germanosilicide has been utilized using NiPt alloy and novel NiPt/Co/TiN tri-layer. And, the Ni Germanosilicide Properties were characterized according to different Ge ratio (x) in $Si_{l-x}Ge_x$ for the next generation CMOS application. The sheet resistance of Ni Germanosilicide utilizing pure-Ni increased dramatically after the post-silicidation annealing at $600^{\circ}C$ for 30 min. Moreover, more degradation was found as the Ge fraction increases. However, using the proposed NiPt/Co/TiN tri-layer, low temperature silicidation and wide range of RTP process window were achieved as well as the improvement of the thermal stability according to different Ge fractions by the subsequent Co and TiN capping layer above NiPt on the $Si_{l-x}Ge_x$. Therefore, highly thermal immune Ni Germanosilicide up to $600^{\circ}C$ for 30 min is utilized using the NiPt/Co/TiN tri-layer promising for future SiGe based ULSI technology.

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