• 한국표면공학회지
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• 제41권3호
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• pp.83-87
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• 2008

This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to $SiO_2$ with $BCl_3$/Ar gas mixture. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from -50 V to -200 V, the etch rate of TiN thin film increased from 15 nm/min to 452 nm/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was $BCl_3$(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 nm), $Cl^+$(481.9 nm) and $Cl^{2+}$(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in $BCl_3$/Ar ICP plasma.

• Elastomers and Composites
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• 제44권4호
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• pp.408-415
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• 2009

졸-겔 방법을 사용하여 Fe-ACF/$TiO_2$ 복합체 광촉매를 제조하였다. 여러 가지 철 전구체를 사용하여 세가지 Fe-ACF/$TiO_2$ 복합체를 제조하고 BET, SEM, XRD 및 EDX를 사용하여 특성화 하였다. UV 조사에서 Rh.B 용액의 분해에 의거하여 Fe-ACF/$TiO_2$ 복합체의 광촉매 특성을 파악 하였다. 실험 결과로부터, Fe-ACF/$TiO_2$ 복합체는 ACF/$TiO_2$ 복합체 보다 Rh.B의 제거 효과가 더 우수함을 나타내었다. 또한 여러 가지 Fe 전구체 사용으로 인한 Fe 원소의 포토-펜톤 효과는 다르게 나타났다. $FeCl_3$을 사용하여 제조된 Fe-ACF/$TiO_2$ 복합체는 가장 우수한 포토-펜톤 효과를 나타내었고, pH 변화에 의존하여 Rh.B 용액 분해에 대하여 영향을 주었다.

• Corrosion Science and Technology
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• 제2권5호
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• pp.212-218
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• 2003

Electronic properties of passive films formed on Ti at film formation potentials $(E_f)V_{SCE}$ in pH 8.5 buffer solution and in an artificial seawater were examined through the photocurrent measurement and Mott-Schottky analysis. The passive films formed on Ti in pH 8.5 buffer solution exhibited a n-type semiconductor with a band gap energys $(E_g);E_g^{n=2}=3.4$ eV for nondirect electron transition, and $E_g^{n=0.5}=3.7$ eV for direct electron transition. These band gap values were almost same as those for the passive films formed in artificial seawater, indicating that chloride ion ($Cl^-$ in solution did not affect the electronic structure of the passive film on Ti. $E_g$ for passive films formed on Ti were found to be greater than those ($E_g^{n=0.5}=3.1$ eV, $E_g^{n=2}=3.4$) for a thermal oxide film formed on Ti in air at $400^{\circ}C$. The disorder energy of passive film, determined from the absorption tail of photocurrent spectrum, was much greater than that for the thermal oxide film farmed on Ti in air at $400^{\circ}C$. The greater $E_g$ and the higher disorder energy for the passive film compared with those for the thermal oxide fIlm suggest that the passive film on Ti exhibited more disorded structure than the thermal oxide film. The donor density (about $2.4{\times}10^{20}cm^{-3}$) for the passive film formed in artificial seawater was greater than that (about $20{\times}10^{20}cm^{-3}$) formed in pH 8.5 buffer solution, indicating that $Cl^-$ increased the donor density for the passive film on Ti.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.325-325
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• 2006

Cationic polymerization of isobutyl vinyl ether using various metal halides was examined in toluene in the presence of an added base at $0^{\circ}C$. In conjunction with an appropriate weak base such as ethyl acetate or 1,4-dioxane, all metal halides but $FeBr_{3}\;and\;GaCl_{3}$ led to living cationic polymerization. The polymerization rates varied as follows: $FeBr_{3},\;GaCl_{3}\;>\;FeCl_{3}\;>\;SnCl_{4}\;>\;InCl_{3}\;>\;ZnCl_{2}\;>>\;AlCl_{3},\;HfCl_{4},\;ZrCl_{4}\;>\;EtAlCl_{2},\;BiCl_{3},\;TiCl4\;>>\;SiCl_{4}\;>\;GeCl_{4}$. This order partially corresponds to that of the equilibrium constant in the formation of a carbocation from a chloroalkane in the presence of a carbonyl compound. With extremely active Lewis acids, such as $FeBr_{3}\;and\;GaCl_{3}$, the use of a stronger base, THF, was required to achieve living polymerization.

• 한국재료학회지
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• 제10권6호
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• pp.398-402
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• 2000

유도 용해후 열기계적 처리를 거친 3종류의 $Al_3Ti-Cr합금, 즉 Al_{67}Ti_{25}Cr_8,\;Al_{66}Ti_{24}Cr_{10}$ 및 Al_{59}Ti_{26}Cr_{15}에 대해 2.5% NaCl 용액 내에 부삭시험과 1000, 1100 및 $1200^{\circ}C$에서의 고온 산화시험을 실시하였다. 전기화학적 평가결과에서 Cr조성이 증가함에 따라 국부부식에 대한 내식성이 증가하였으며, 부동태 피막의 취성파괴를 방지하였다. XPS결과는 $Al_3Ti-Cr$합금의 부동태 피막은 주로 $Al_2O_3$로 구성되어 있으며, $TiO_2$ 및 $Cr_2O_3$도 공존하고 있음을 알 수 있었다. 고온 내산화성은 모든 시편이 전체적으로 뛰어난 내산화성을 지니고 있었는데, 구체적으로는 $Al_{59}Ti_{26}Cr_{15},\;Al_{66}Ti_{24}Cr_{10}\;및\;Al_{67}Ti_{25}Cr_8$의 순으로 증가하였다. 이는 합금내의 Al 함량이 증가할수록 $Al_2O_3$보호피막의 형성이 용이하였기 때문이었다.

• 한국세라믹학회지
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• 제22권4호
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• pp.61-65
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• 1985

$BaTiO_3$ powders doped with $BaTiO_3$ and $Nb_2O_5$ at 9$0^{\circ}C$ for 1hr. were synthesized by Direct Wet Process. These powders were very homogeneous and fine particle size. To obtain the highe PTCR effect AST($1/3Al_2O_3$.$3/4SiO_2$.$1/4TiO_2$) and $MnO_2$ were added in the semiconduc-ting $BaTiO_3$. In this case $Bi_2O_3$ and $MnO_2$ were used in the form of $Bi(NO)_3$ and $MnCl_2$.$4H_2O$ solution for Direct Wet Process. $BaTiO_3$ doped Nb2O5 and $MnO_2$ demostrated greater PTCR effect than $BaTiO_3$ doped $Nn_2O_5$ only.

• 한국세라믹학회지
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• 제26권4호
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• pp.493-498
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• 1989

High purity, submicron BaTiO3 powder was prepared by a hydrothermal technique using Ba(OH)2.8H2O, TiCl4 and NH4OH as starting raw materials. The submicron BaTiO3 powder was synthesized at 130~23$0^{\circ}C$ for 2.5h to yield highly crystalline particles with a narrow particle distribution. The mole ratio of Ba(OH)2.8H2O/TiO(OH)2 was 1.5. It is possible to obtain BaTiO3 with Ba : Ti=1.00$\pm$0/01. The samples densified well at 13$25^{\circ}C$, showing a uniform and fine grain structure. The grain size ranged between 0.3 and 0.5${\mu}{\textrm}{m}$. The products obtained by hydrothermal treatment at various temperatures from 130 to 23$0^{\circ}C$ were characterized by XRD, DTA, BET and SEM etc.

• 한국재료학회지
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• 제7권2호
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• pp.114-120
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• 1997

$Ba(NO_{3})_{2}$와 $TiCl_{4}$의 혼합 수용액으로부터 전기화학법 중 음극혼원법(cathodic reduction method)을 이용하여 stainless steel기판 위에 $BaTiO_{3}$박막을 제조하였다. $BaTiO_{3}$전구체 박막은 혼합 수용액으로부터 반응초기에 $TiO_{2}{\cdot}nH_{2}O$M/형태로 우선적으로 형성되었으며, 일정 시간이 경과한 후에는 일정한 Ba/Ti몰비를 갖는 박막이 제조되었다. $BaTiO_{3}$박막 내 Ba/Ti조성비는 혼합 수용액 내에 존재하는 이온 조성비 $Ba^{2+}/Ti_{4+}$에 변화하였는데, 0.3M $Ba(NO_{3})_{2}$와 0.1M $TiCI_{4}$의 혼합 수용액과 $10mA/cm^2$의 전류를 흘려주는 조건에서 Ba/Ti의 조성비가 1에 가까운 박막을 얻을 수 있었다. 이러한 전구체 박막을 $500^{\circ}C$이상에서 열처리한 결고 페로브스카이트 상의 $BaTiO_{3}$박막이 제조되었다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.45-48
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• 2000

High dielectric (Ba,Sr)TiO$_3$thin films were etched in an inductively coupled plasma (ICP) as a function of C1$_2$/Ar gas mixing ratio. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400$\AA$/min and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. We investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The surface roughness decreased as Cl$_2$increases in C1$_2$/Ar plasma because of non-volatile etching products. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinity of etched BST film maintained as similar to as-deposited BST under Ar only and Cl$_2$(20)/Ar(80). However, (100) orientation intensity of etched BST film abruptly decreased at Cl$_2$only plasma. It was caused that Cl compounds were redeposited on the etched BST surface and damaged to crystallinity of BST film during the etch process.

• 청정기술
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• 제20권3호
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• pp.306-313
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• 2014

나노다공성 $TiO_2$ 필름은 주로 염료감응형 태양전지의 작동전극으로 사용된다. 지금까지 염료감응형 태양전지의 광전환효율을 높이기 위해 $TiO_2$ 나노구조체에 대한 다양한 연구가 시도되어왔다. 본 연구에서는 수열합성법을 이용하여 FTO glass 위에 루타일 $TiO_2$ 나노로드를 수직적으로 성장시켰고 그 위에 아나타제 $TiO_2$ 필름을 재 합성하였다. 이 새로운 방법은 아나타제 $TiO_2$ 합성시 요구되는 시드층 합성단계를 피할 수 있었다. 밀집한 아나타제 $TiO_2$ 층은 전자생성층으로써 고안되었고 시드층 대신 합성된 루타일 $TiO_2$ 나노로드는 생성된 전자들이 FTO glass로 이동하는 통로역할을 하게 되었다. 전자이동률을 증진시키기 위해 루타일 나노로드에 $TiCl_4$ 수용액을 이용하여 표면 처리하였고 열처리 후 표면 위에 얇은 아나타제 $TiO_2$ 필름을 형성시켰다. 합성된 루타일-아나타제 $TiO_2$ 구조체의 두께는 $4.5-5.0{\mu}m$이고 셀 테스트 결과 3.94%의 광전환효율을 얻게 되었다. 이는 루타일 $TiO_2$ 나노로드 전극과 비교했을 때 광전환효율이 상당히 향상되는 것을 확인할 수 있었다.