• 제목/요약/키워드: $TiCl_3$

검색결과 442건 처리시간 0.036초

고밀도 플라즈마에 의한 (Ba,Sr)$TiO_3$막의 식각특성 연구 (A study on the etching properties of (Ba,Sr)$TiO_3$ film by high density plasma)

  • 김승범;김창일;장의구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.798-800
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    • 1998
  • (Ba,Sr)$TiO_3$ thin films were etched with $Cl_2$/Ar gas mixing ratio in an inductively coupled plasma (ICP) by varying the etching parameter such as f power, do bias voltage, and chamber pressure. The etch rate was $560{\AA}/min$ under Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2, rf power of 600 W, do bias voltage of 250 V, and chamber pressure of 5 mTorr, At this time, the selectivity of BST to Pt, $SiO_2$ was respectively 0.52, 0.43. The surface reaction of the etched (Ba,Sr)$TiO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

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전기화학적 소독에 의한 Legionella pneumophila 불활성화 (Inactivation of Legionella pneumophila by Electrochemical Disinfection)

  • 박영식;김동석
    • 한국물환경학회지
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    • 제23권5호
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    • pp.613-619
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    • 2007
  • This study has carried out a performance of dimensionally stable anode for the purpose of disinfection of Legionella pneumophila in water. Three kinds of electrode were prepared by plating and thermal deposition, which were coated by the oxides of Pt, Ru and Ir on Ti metal surface, respectively. The order of disinfection performance for Legionella pneumophila was Ru/Ti > Ir/Ti > Pt/Ti. Free Cl and $ClO_2$ generation of Ir/Ti electrode was higher than that of two electrodes. However, the concentrations of generated $H_2O_2$ and $O_3$ of the Ru/Ti electrode were highest among the three electrodes. The higher NaCl concentration was, the more oxidants was generated and disinfection effect was increased. However, optimum NaCl dosage was 0.0125% due to the regulation on the conductivity and $Cl^-$ concentration for the cooling water quality of air conditioning and refrigeration equipment. With the increase of current, oxidants was more generated and following disinfection effect was increased. The increase of electrode distance reduced oxidants generation due to the low electric power, and their disinfection effect was decreased accordingly.

Kroll법에 의한 타이타늄의 제조기술 (Production Technology of Titanium by Kroll Process)

  • 손호상
    • 자원리싸이클링
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    • 제29권4호
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    • pp.3-14
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    • 2020
  • 현재 타이타늄 스펀지는 Kroll법에 의해 만들어지고 있다. 타이타늄의 새로운 제련법과 리사이클링 기술의 중요성을 이해하기 위해서는 기존의 타이타늄 제조기술에 대한 검토가 필요하므로 본 논문에서는 기존의 Kroll법을 중심으로 한 타이타늄 제조기술에 대해 고찰하였다. Kroll법은 아래와 같이 크게 네 가지 공정으로 구분할 수 있다. (1) 유동 염화법이나 용융염 염화법에 의한 TiO2의 염화 공정 (2) 반응기 결합방법에 따른 역U자형이나 I자형을 이용한 TiCl4의 Mg에 의한 환원과 Mg와 MgCl2의 증류 (3) 단극형이나 복극형 전해조에 의한 반응 부산물인 MgCl2의 전해와 Mg과 Cl2의 생성 (4) 스펀지 타이타늄의 분쇄와 VAR이나 EBM에 의한 용해 및 잉곳 제조 지난 80년 동안 제련공정이 많이 개선되었지만, Kroll법은 TiCl4의 환원과 MgCl2의 분리를 위한 비용이 많이 들고 시간이 많이 걸리는 회분식 조업이라는 문제점을 가지고 있다.

염화티타늄(III)으로부터 질화티타늄 미분체의 합성 (Preparation of Fine Titanium Nitride Powders from Titanium Trichloride)

  • 이진호;장윤식;박홍채;오기동
    • 한국세라믹학회지
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    • 제27권7호
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    • pp.916-924
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    • 1990
  • The preparatin of the fine TiN powders by reduction-nitridation of TiCl3-Al-N2 system was attempted in the temperature range from 350$^{\circ}$to 100$0^{\circ}C$. The formation mechanism and kinetics of TiN were examined, and the resultant TiN powder was characterized by means of XRD, PSA and SEM-EPMA methods. TiN was formed at temperatrue higher than $600^{\circ}C$. As an intermediate phase, AlTi was obtained. The apparent activation energy for the formation of TiN was approximately 4.2kcal/mole(600$^{\circ}$~90$0^{\circ}C$). The crystallite size and lattice constnat of TiN powder obtained in the temperature range from 600$^{\circ}$to 100$0^{\circ}C$ for 2h at the Al/TiCl3 molar ratio of 1.0 were 160~255A and 4.231~4.239A, respectively. According to PSA measurement, the mean particle size ranged from 14.0 to 14.8${\mu}{\textrm}{m}$.

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공침법에 의한 $Ba_2Ti_9O_{20}$ 합성과 $ZrO_2$ 첨가효과에 관한 연구 (A Study on Synthesis of $Ba_2Ti_9O_{20}$ by Coprecipitation Process and the Effect of $ZrO_2$ Addition)

  • 이병하;이경희;이헌식;전성용
    • 한국세라믹학회지
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    • 제30권12호
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    • pp.1023-1028
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    • 1993
  • To obtain a single phase of Ba2Ti9O20 at lower temperature than previious other researches. We investigated the effect of Zr substitution for predetermined portions of Ti in Ba2Ti9O20. In this study, the four compounds(x=0, 0.028, 0.048, 0.068) of Ba2(Ti1-xZrx)9O20 were prepared by coprecipitation reaction of BaCl2, TiCl4 and ZrOCl2 with (NH4)2CO3 and NH4OH as the coprecipitating agents and pH regulators, in queous solution. Owing to 4.8 mol% addition, the single phase of Ba2Ti9O20 showing high Q was obtained at 115$0^{\circ}C$ which is lower by 25$0^{\circ}C$ than the temperature in case of mechanical mixtures of BaCO3 and TiO2.

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$BCl_3$/Ar 플라즈마에서 $Cl_2$ 첨가에 따른 TiN 박막의 식각 특성 (Etch characteristics of TiN thin film adding $Cl_2$ in $BCl_3$/Ar Plasma)

  • 엄두승;강찬민;양설;김동표;김창일
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.168-168
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    • 2008
  • Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

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열간압연에 의한 Ti-Nb계 합금의 미세조직 및 내식성에 대한 연구 (A study on microstruture and corrosion resistance of Ti-Nb alloys by hot rolling)

  • 박효병
    • 대한치과기공학회지
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    • 제23권2호
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    • pp.223-230
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    • 2002
  • Pure titanium and Ti6Al4V alloy have been mainly used as implant materials but the cytotoxicity of V, neurotoxicity of Al resulting in Alzheimer disease had been reported. This paper was described the influence of composition of Ti-Nb alloys with 3 wt%Nb, 20 wt%Nb on the microstructure and corrosion resistance. Specimens of Ti alloys were melted in vacuum arc furnace and homogenized at $1000^{\circ}C$ for 24hr. The alloys were rolled in $\beta$ and ${\alpha}+{\beta}$ regions. The corrosion resistance of Ti alloys were evaluated by potentiodymic polarization test in 0.9% NaCl and 5% HCl solutions. The results can be summarized as follows: 1. The microstructure was transformed from $\alpha$ phase to ${\alpha}+{\beta}$ phase by adding Nb 2. The hardness of Ti-20Nb alloy was greater than Cp- Ti, Ti-3Nb alloy. 3. The corrosion resistance of Ti-20Nb alloy was better than that of Cp-Ti, Ti-3Nb alloy in 0.9%NaCl and 5%HCl solutions.

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화학증착법에 의한 $PbTiO_3$ 박막의 재료 (Fabrication of $PbTiO_3$ Thin Film by Chemical Vapor Deposition Technique)

  • 윤순길;김호기
    • 한국세라믹학회지
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    • 제23권6호
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    • pp.33-36
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    • 1986
  • The $PbTiO_3$is well known materials having remarkable ferroelectric piezoelectric and pyro-electric properties. Thin films of the lead titanite has been successfully fabricated by Chemical Vapor Deposition on the borosilicate glass and titanium substrate. The $PbTiO_3$ thin film deposited on the borosilicate glass using the $PbCl_2$, $TiCl_4$ dry oxygen and wet oxygen at different temperatures (50$0^{\circ}C$-$700^{\circ}C$) grows along the (001) preferred orientation. On the other hand the $PbTiO_3$ thin film deposited on the titanium substrate using the PbO grows along the (101) preferred orientation. Growth orientation of deposited $PbTiO_3$ depends on the reaction species irrespective of substrate materials. Maximum dielectic constant and loss tangent of the $PbTiO_3$ thin film deposited on the titanium substrate are about 90 and 0.02 respectively, . Deposition rates of $PbTiO_3$ deposited on the borosilicate glass and titanium substrate are 10-15 ${\mu}{\textrm}{m}$/hr. Titanium dioxide interlayer formed be-tween $PbTiO_3$ film and titanium substrate material, It improved the adhesion of the film.

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초미립 $BaTiO_3$의 합성 (Preparation of Submicron Barium Titanate Powders.)

  • 안영필;김복희;황재석;유경섭
    • 한국세라믹학회지
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    • 제21권3호
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    • pp.278-282
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    • 1984
  • Barium titanate powder was made by firing the complex hydroxide which had been synthesized with chemical wet process by the medium of $H_2O_2$. This experiment was done as following A mixed solution of $BaCl_2$, $TiCl_4$ and $H_2O_2$ with 1:1:10 mol ratio was prepared. Ammonium hydroxide was added into the mixed solution. In the range of pH 8-10 $BaTiO_3$ complex hydroxide was obtained and treated at room temperature 11$0^{\circ}C$, 20$0^{\circ}C$, 40$0^{\circ}C$ and $600^{\circ}C$. The results obtaiined from this experiment were as follows. At room temperature $BaTiO_3$ complex hydroxide was amorphous. Above 10$0^{\circ}C$ crystalline $BaTiO_3$ was obtained and particle size of $BaTiO_3$ was increased with elevated temperature. So the particle size of BaTiO3 could be controlled by the firing temperature. After treating $BaTiO_3$ complex hydroxide at 10$0^{\circ}C$ the average particle size of $BaTiO_3$ was 0.22$\mu\textrm{m}$.

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