• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.772-775
• /
• 2004

본 논문에서는 $B_2O_3$ 첨가가 Ba$(Mg_{1/3}Ta_{2/3})O_3$ (BMT)의 유전특성 및 미세구조의 변화에 미치는 영향에 대해 연구하였다 $B_2O_3$가 소량 첨가되었을 때는 결정립의 성장을 야기하여 치밀한 미세구조를 보였지만, 다량이 첨가된 경우 비정상 결정립 성장을 야기하여 치밀화가 떨어지는 미세구조를 보임과 동시에 $Ba_3Ta_5O_{15}$의 2차상을 형성했다. 이는 소량의 $B_2O_3$ 첨가가 유전특성의 향상을 가져왔지만, 다량의 첨가는 오히려 특성의 악화를 가져온 결과의 원인이라 생각된다. 0.5mol%의 $B_2O_3$를 첨가하여 $1500^{\circ}C$에서 6시간 소결한 경우 ${{\varepsilon}_r}=24$, $Q{\times}f=210,000GHz$의 유전 특성 값과 $4.74ppm/^{\circ}C$의 $T_{cf}$ 값을 얻었다.

• Proceedings of the Mineralogical Society of Korea Conference
• /
• 2003.05a
• /
• pp.67-67
• /
• 2003

The chemical compositions and textural relationships of the Nb-Zr oxide minerals including pyrochlore [ideally (Ca,Na)$_2$Nb$_2$O$\sub$6/(OH,F), with up to 24% UO$_2$ and 16% Ta$_2$O$\sub$5/] and baddeleyite [ideally ZrO$_2$, with up to 6% Nb$_2$O$\sub$5/] in the Sokli carbonatite complex, Kola Peninsula, Arctic are described. These two minerals in carbonatites are the major hosts for the HFSEs such as U, Th, Ta, Nb, Zr and Hf and thus are interest both economically and petrologically. The Sokli carbonatite complex (360-370 Ma) in Northern Finland, which forms a part of the Paleozoic Kola Alkaline Province (KAP), is mainly composed of multi-stages of carbonatite and phoscorite associations (P1-C1 P2-C2, P3-C3, D4 and D5) surrounded by altered ultramafic rocks (olivinite and pyroxenite) and cut by numerous small dikes of ultramafic lamprophyre. The Sokli complex contains the highest concentration in niobium and probably in tantalum, which are economically very important to modern steel technology, among the ultramafic-alkaline complexes of the KAP. Pyrochlore and baddeleyite mostly concentrate in the phoscorites. Pyrochlores in the Sokli complex are generally rounded octahedra and cubes in shape, red brown to grey yellow in color, and 0.2 to 5 mm in size. They are found in all calcite carbonatites, phoscorites and dolomite carbonatites, except P1-C1 rocks. These pyrochlores display remarkable zonations which depend on host rock compositions, and have significant compositional variations with evolution of the Sokli complex. The common variation scheme is that (1) early pyrochlore is highly enriched in U and Ta; (2) these elements decrease abruptly in the intermediate stage, while Th and Ce increase, and (3) late stage pyrochlore is low in U, Ta, Th, and Ce, and correspondingly high in Nb. Baddeleyites in the Sokli complex occur in the early P1-C1 and P2-C2 rocks and rarely in P3. They crystallized earlier than pyrochlores, and occasionally show post-magmatic corrosion and replacement. The FeO and TiO$_2$ contents of baddeleyites are much lower than those of the other terrestrial and lunar baddeleyites, whereas Nb$_2$O$\sub$5/ and Ta$_2$O$\sub$5/ contents are the highest among the reported compositions. Ta/Nb and Zr/Nb ratios of pyrochlores and baddeleyites decrease towards later stage facies, which is in accordance with the whole rock compositions. The variation of Ta/Nb and Zr/Nb ratios of pyrochlores and baddeleyites is considered to be a good indicator to trace an evolution of the carbonatite complexes.

• Journal of the Korean Ceramic Society
• /
• v.47 no.5
• /
• pp.461-466
• /
• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• Korean Journal of Materials Research
• /
• v.10 no.4
• /
• pp.290-294
• /
• 2000

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.

• Journal of Sensor Science and Technology
• /
• v.4 no.3
• /
• pp.80-88
• /
• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.05a
• /
• pp.99-99
• /
• 1994

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.605-608
• /
• 1998

In this paper, we have investigated the pyroelectric characteristics of the $20\mu\textrm{m}-thick$ $LiTaO_3$ single crystal with black coating by using the nondestructive dynamic method. The $LiTaO_3shows$ the maximum pyroelectric coefficient (${\gamma}$) of $1.56$\times$10-8C/\textrm{cm}^2K$ at 40Hz and the responsivity (Rv) is 488V/W at 2Hz. The noise equivalent power (NEP) is obtained as 3.95$\times$10-10W/√Hz at 40Hz. The detectivity (D*) is obtained divided by the sample area and estimated to be 5.6$\times$108cm√Hz/W at 40Hz. These results, shows that the $LiTaO_3$ single crystals are the best candidates to pyroelectric IR sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.3
• /
• pp.229-236
• /
• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Korean Journal of Materials Research
• /
• v.7 no.5
• /
• pp.381-385
• /
• 1997

PEMOCVD에 의해서 SrBi$_{2}$Ta$_{2}$O$_{9}$밥막이 낮은 온도에서 성공적으로 Pt/Ti/SiO$_{2}$Si위에 증착되었다. 5$50^{\circ}C$에서 증착된 200nm박막은 치밀하고 작은 결정립을 보였으며 3V의 인가전압하에서 이력곡선은 포화되기 시작하였다. 3V에서 박막은 잔류분극 (P$_{r}$)과 항전계(E$_{c}$)는 각각 15$\mu$/$\textrm{cm}^2$과 50kV/cm이었다. 6V bipolar square pulse의 피로측정에서 박막은 1.0x$10^{11}$cycles까지 피로 현상을 보이지 않았다. PEMOCVD에 의해서 5$50^{\circ}C$에서 증착된 SBT박막은 비휘발성 기억소자에 충분히 활용할 수 있다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.167-168
• /
• 2009

Phase pure barium magnesium tantalate $Ba(Mg_{1/3}Ta_{2/3})O_3$(BMT) nanopowders were synthesized at temperature as low as $220^{\circ}C$ through glycothermal reaction by using $Ba(OH)_2{\cdot}8H_2O$, $Mg(NO_3){\cdot}6H_2O$, and $TaCl_5$ as precursors and 1,4-butandiol as solvent. XRD, SEM, and TGA data support that glycothermal processing method provides a simple low temperature route for producing fine grained BMT nanopowders without alkaline mineralizers. BMT nanopowders synthesized at $220^{\circ}C$ showed more homogenous with rounded morphologies.