• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.192-197
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• 2014

Red-emitting nitride phosphors recently attracted considerable attention because of their high thermal stability and high color rendering index properties. For excellent phosphor of white light-emitting-diode, ternary nitride phosphor of $Sr/SmSi_5N_8:Eu^{2+}$ with different $Eu^{2+}$ ion concentration were synthesized by solid state reaction method. In this work, red-emitting nitride $Sr/SmSi_5N_8:Eu^{2+}$ phosphor was successfully synthesized by using multi-step high frequency induction heat treatment. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Sr/SmSi_5N_8:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Sr/SmSi_5N_8:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 300 - 550 nm, namely from UV to visible area with distinct enhanced emission peaks. With an increase of $Eu^{2+}$ ion concentration, the peak position of emission in spectra was red-shifted from 613 to 671 nm. After via multi-step heat treatment, prepared phosphor showed excellent luminescence properties, such as high emission intensity and low thermal quenching, better than commercial phosphor of $Y_3Al_5O_{12}:Ce^{3+}$. Using $Eu_2O_3$ as a raw material for $Eu^{2+}$ dopant with nitrogen gas flowing instead of using commercial EuN chemical for $Sr/SmSi_5N_8:Eu^{2+}$ synthesis is one of characteristic of this work.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.239-242
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• 2009

$Sr_2Si_5N_8:Eu^{2+}$, one of the most recently developed phosphors for use in white light emitting diodes, exhibits a two-peak emission. Namely, the emission band of $Sr_2Si_5N_8:Eu^{2+}$ is deconvoluted into two Gaussian peaks irrespective of the $Eu^{2+}$ concentration. We examined the two-peak emission of $Sr_2Si_5N_8:Eu^{2+}$ by analyzing the time-resolved photoluminescence spectra. We revealed that the two-peak emission was closely associated with the energy transfer taking place between $Eu^{2+}$ activators located at two different crystallographic sites in the $Sr_2Si_5N_8$ structure. The experimental results coincided well with the rate equation model involving the crystallographic information of the host.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.304-308
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• 2006

We have synthesized a $Eu^{2+}-activated\;Sr_3MgSi_2O_8$ blue phosphor and $(Sr,Ba)_2SiO_4$ yellow phosphor and prepared white LEDs by combining these phosphors with a InGaN UV LED chip. Three distinct emission bands from the InGaN-based LED and the two phosphors are clearly observed at 405 nm, 460 nm and at around 560 nm, respectively. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This blue emission was used as an optical transition of the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor. The 460 nm and 560 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the $Sr_3MgSi_2O_8:Eu$ and $(Sr,Ba)_2SiO_4$ host matrix. As a consequence of a preparation of UV White LED lamp using the $Sr_3MgSi_2O_8:Eu$ blue phosphor and $(Sr,Ba)_2SiO_4:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the ration of epoxy/two phosphor (1/0.2361). At this time, the CIE chromaticity was CIE x = 0.3140, CIE y = 0.3201 and CCT (6500 K).

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.11-15
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• 2017

Red phosphors, $Sr_2Si_5N_8:Eu^{2+}$, were synthesized as a single-phase crystal structure by optimizing carbon and $Eu^{2+}$ contents in a carbothermal reduction nitridation method. With increasing $Eu^{2+}$ contents, the photoluminescence spectra were red-shifted from 600 nm peak for 1 mol% for to 700 nm for 7 mol%. It was suggested that this red shift is attributed to the energy transfer from one low-energy sited $Eu^{2+}$ (1) to other high-energy sited $Eu^{2+}$ (2). Finally, the best red sample (620 nm emission peak and 80 nm half width for 3 mole% of $Eu^{2+}$) was packaged on a Blue LED together with two additional green and yellow phosphors, the fabricated White LED showed a high color-rendering index of 90 and white color coordinates of x= 0.321 and y = 0.305.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.3-32
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• 2015

• Current Optics and Photonics
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• v.1 no.6
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• pp.613-617
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• 2017

Due to optimal advances such as chromatic performance, durability, low power consumption, high efficiency, long-lifetime, and excellent environmental friendliness, white LEDs (WLEDs) are widely used in vehicle front lighting, backlighting, decorative lighting, street lighting, and even general lighting. In this paper, the remote packaging WLEDs (RP-WLEDs) with bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor was proposed and investigated. The simulation results based on the MATLAB software and the commercial software Light Tools indicated that the color rendering index (CRI) of bi-layer phosphor RP-WLEDs had a significant increase. The CRI had a considerable increase from 72 to 94. In conclusion, the results showed that bi-layer red-emitting $Sr_2Si_5N_8:Eu^{2+}$ and yellow-emitting YAG:Ce phosphor could be a prospective approach for manufacturing RP-WLEDs with enhanced optical properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.195-200
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• 2013

Novel Sr-Y-Si-Oxynitride yellow phosphors were synthesized and the effect of calcination temperature, reduction temperature and $Eu^{2+}$ concentration on their luminescence properties were studied. Optimal temperature conditions were found to be $1400^{\circ}C$ and $1300^{\circ}C$ for solid-state reaction and reduction, respectively. The synthesized $Ba_9Y_{2+y}Si_6O_{24-3y}N_{3y}:Eu^{2+}$ phosphors showed a single intense broadband emission in the range of 571~587 nm for 450 nm excitation light source. The highest luminescence intensity was obtained with Eu concentration of 3 mol% and concentration quenching was observed beyond 5 mol%. FE-SEM and PSA showed that the synthesized phosphors consists of particles with an average size of ${\sim}8.2{\mu}m$.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.211-217
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• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• Information Display
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• v.13 no.1
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• pp.31-36
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• 2012