• Transactions on Electrical and Electronic Materials
• /
• v.1 no.4
• /
• pp.30-39
• /
• 2000

The variation of electrical properties of (Ba, Sr)TiO$_3$[BST] thin films deposited of RuO$_2$electrode with (Ba+Sr)/Tr ration was investigated. BST thin films with various (Ba+Sr)/Tr ration were deposited on RuO$_2$/Si substrates using in-situ RF magnetron sputtering. It was found that the electrical properties of BST films depends on the composition in the film. The dielectric constant of the BST films is about 190 at the (Ba+Sr)/Tr ration of 1.0, 1,025 and does not change markedly. But , the dielectric constant degraded to 145 as the (Ba+Sr)/Tr ratio increase to 1.0. In particular, the leakage current mechanism of the films shows the strong dependence on the (Ba+Sr)/Tr ration in the films. At the ration (Ba+Sr)/Tr=1,025, the Al/BST/RuO$_2$ capacitor show the most asymmetric behavior in the leakage current density, vs, electric field plot. It is considered that the leakage current of the (Ba+Sr)/Tr=1,025 thin films is controlled by the battier-Iimited process, i,e, Schottky emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.565-568
• /
• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.4
• /
• pp.171-176
• /
• 2012

As langasite $A_3BC_3D_2O_{14}$ compounds with piezoelectric properties exhibit no phase transition up to the melting point of 1,400-$1,500^{\circ}C$, many high temperature applications are expected for the SAW filter, temperature sensor, pressure sensor, and so on, based on the digital transformation of wider bandwidth and higher-bit rates. It has a larger electromechanical coupling factor compared to quartz and also nearly the same temperature stability as quartz. The $La_3Ga_5SiO_{14}$ (LGS) crystal with the $Ca_3Ga_2Ge_4O_{14}$-type crystal structure was synthesized and the crystal structure was analyzed by Mill et al. It is also an important feature that the growth of the single crystal is easy. In the case of three-element compounds such as $[R_3]_A[Ga]_B[Ga_3]_C[GaSi]_DO_{14}$ (R=La, Pr and Nd), the piezoelectric constant increases with the ionic radius of R. In this study, crystal structures of four-element compounds such as $[A_3]_A[B]_B[Ga_3]_C[Si_2]_DO_{14}$ (A = Ca or Sr, B = Ta or Nb) are analyzed by a single crystal X-ray diffraction, and the mechanism and properties of the piezoelectricity depending on the species of cation was clarified based on the crystal structure.

• Journal of the Microelectronics and Packaging Society
• /
• v.4 no.2
• /
• pp.47-54
• /
• 1997

Pt/SiO2/Si을 기판으로 사용하고 RF 마그네트론 스퍼터링에 의한 (Ba, Sr)TiO3 (BST) 씨앗층을 약 10nm 정도의 두께로 입힌 다음 그 상부에 화학 기상증착법으로 BST를 증착하여 BST seed layer가 CVD BST 박막의 특성에 미치는 영향을 조사하였다. 또한 급 속열처리가 BST 박막과 커패시터의 특성에 미치는 영향도 조사하였다. Seed layer와 급속 열처리에 의해 박막의 결정성이 향상되었으며 이로인해 유전상수가 증가되었고 주파수에 대 한 유전특성도 개선되었다. Seed layer를 도입함으로써 BST 박막과 Pt 하부전극 사이의 계 면에 존재하고 있는 산소부족\ulcorner이 사라짐을 확인할수 있었으며 이로 인해 Pt/BST/Pt 커\ulcorner 시터의 누설전류가 감소하였다. 또한 급속 열처리에 의해 BST/Pt 계면에서 트랩된 전자의 농도가 감소함으로써 누설전류 특성이 개선됨을 알수 있었다. Seed layer 위에 증착된 CVD BST 박막의 유전상수는 증착온도가 증가함에 따라 증가하였으나 누설전류도 같이 증가하 였다.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.23 no.4
• /
• pp.195-200
• /
• 2013

Novel Sr-Y-Si-Oxynitride yellow phosphors were synthesized and the effect of calcination temperature, reduction temperature and $Eu^{2+}$ concentration on their luminescence properties were studied. Optimal temperature conditions were found to be $1400^{\circ}C$ and $1300^{\circ}C$ for solid-state reaction and reduction, respectively. The synthesized $Ba_9Y_{2+y}Si_6O_{24-3y}N_{3y}:Eu^{2+}$ phosphors showed a single intense broadband emission in the range of 571~587 nm for 450 nm excitation light source. The highest luminescence intensity was obtained with Eu concentration of 3 mol% and concentration quenching was observed beyond 5 mol%. FE-SEM and PSA showed that the synthesized phosphors consists of particles with an average size of ${\sim}8.2{\mu}m$.

• Journal of the Korean Ceramic Society
• /
• v.40 no.1
• /
• pp.46-51
• /
• 2003

Ferroelectric $Sr_{0.7}Bi_{2.1}Ta_{2.0}O_9$ thin films with 200 nm thicknesses were deposited on $Pt/Ti/SiO_2/Si$ substrate by liquid delivery MOCVD process. In these experiments, $Sr(TMHD)_2{\cdot}pmdeta,\; Bi(ph)_3$ and $Ta(O^i/Pr)_4(TMHD)$ were used as precursors, which were dissolved in n-butyl acetate and pentamethyldiethylenetriamine. Substrate temperature and reactor pressure of this experiment was $570^{\circ}C$and 5 Torr, respectively. The remanent polarization value (2Pr) of SBT thin film with annealed at $780^{\circ}C$was$7.247{\mu}C/cm^2$and$8.485 {\mu}C/cm^2$by applying 3 V and 5 V, respectively.

• Electrical & Electronic Materials
• /
• v.3 no.4
• /
• pp.306-314
• /
• 1990

SrO-5.7Fe$_{2}$O$_{3}$의 Magnetoplumbite형 Sr페라이트에 첨가제 SiO$_{2}$, H$_{3}$BO$_{3}$CaCO$_{3}$, SrCO$_{3}$을 0.1-0.1wt%로 변화시켜 만든 등방성과 이방성의 자기이력곡선, 밀도, 감자곡선, 고유보자력 및 미세구조특성에 미치는 영향을 조사하였다. 위 첨가제는 페라이트 생성 및 특성개선에 효과적이었도 특히 등방성에서의 입도크기를 3.5.mu.m에서 1.7.mu.m로 하였을때 소결온도가 40.deg.C 낮은 1220.deg.C에서 잔류자속밀도가 2300G, 보자력이 1950Oe, 밀도가 4.51g/Cm$^{3}$, 교유보자력이 3500Oe로 각각 증가하였다. 이방성은 등방성 보다 원등히 우수하였고 최대에너지적 (BH)$_{max}$이 소결온도가 10.deg.C 낮은 1210.deg.C에서 1.13으로 부터 3.3MGOe로 증가하였다. 이값은 이론치의 61%에 도달하고 있다.

• Economic and Environmental Geology
• /
• v.44 no.5
• /
• pp.359-372
• /
• 2011

TA26 seamount, which is located at south part of Tonga arc, occurs widely hydrothermal plume and is area that sampled hostrock, hydrothermal ore and hydrothermal alteration rock for this study. Hostrocks are basalt and basaltic andesite. Altered rocks by hydrothermal solution consists of plagioclase, pyroxene, pyrite, ilmenite, amorphous silica, barite, smectite, iron sulfates, Fe-Si sulfates and Fe silicates. Gains and losses of major, trace and rare earth elements during wallrock alteration suggest that $K_2O$(+0.04~+0.45 g), $SiO_2$(-6.52~+10.56 g), $H_2O$(-0.03~+6.04 g), $SO_4$(-0.46~+17.54 g), S(-0.46~+13.45 g), total S(-0.51~+16.93 g), Ba(-7.60~+185078.62 g), Sr(-36.18~+3033.08 g), Ag(+54.83 g), Au(+1467.49 g), As(-5.80~+1030.80 g), Cd(+249.78 g), Cu(-100.57~+1357.85 g), Pb(+4.91~+532.65 g), Sb(-0.32~+66.59 g), V(-113.58~+102.94 g) and Zn(-49.56~+14989.92 g) elements are enriched from hydrothermal solution. Therefore, gained(enriched) elements(($K_2O$, $H_2O$, $SO_4$, S, total S, Ba, Sr, Ag, Au, As, Cd, Cu, Pb, Sb, V, Zn) represent a potentially tools for exploration of sea-floor hydrothermal deposits from the Tonga arc.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.5
• /
• pp.795-801
• /
• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• Economic and Environmental Geology
• /
• v.25 no.4
• /
• pp.435-446
• /
• 1992

REE, major and trace elements analyses of the Jurassic Daebo granite and Cretaceous Bulguksa granite were carried out to interpet their petrogenesis and relationships between petrogenesis and tectonics. Analytical results are summarized as follows. (1) $SiO_2$ content of the Bulguksa granite (aver. 74.6%) are significantly higher than those of the Daebo granite (aver. 68.1%). Major elements of $TiO_2$, $Al_2O_3$, $P_2O_5$, CaO, MgO, Total FeO, and trace elements of Co, V and Sr are negatively correlated with $SiO_2$. Incompatible elements such as Ba, Sr, Y, Zr and HREE are contained differently in the Bulguksa granites distributed in between Okchon folded belt and Kyongsang sedimentary basin. (2) Trace element abundances show a good discrimination between two goups of granitic rocks. Ba, Sr and V are enriched in Daebo granites, while Zn and Cr are depleted in them. (3) Jurassic granites have quite different Eu anomalies and REE patterns from those of Cretaceous granites: Large negative Eu anomaly in the former and mild or absent Eu anomaly in the latter. The large Eu negative of Cretaceous granitic rocks are interpreted as a differentiated product of fractional crystallization of granitic magma from the upper mantle. Meanwhile, the Daebo plutonic rocks was resulted from the partial melting of subcrustal material or crustal contamination during ascending granitic magma from the mantle. Senario of igneous activities of Mesozoic age in South Korea was proposed based on Kula-Pacific ridge subduction model.