• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.53-56
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• 2004

The a-Si:H TFT using ferroelectric of SrTi $O_3$as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$and S $i_3$ $N_4$. Ferroelctric increases on-current, decreases thresh old voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, refractive index of 1.8~2.0 and resistivity of 10$^{13}$ - 10$^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60~100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8~20${\mu}{\textrm}{m}$ and channel width of 80~200${\mu}{\textrm}{m}$. And it shows that drain current is 3.4$mutextrm{A}$ at 20 gate voltage, $I_{on}$ / $I_{off}$ is a ratio of 10$^{5}$ - 10$^{8}$ and $V_{th}$ is 4~5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $mutextrm{A}$ at 20 gate voltage and $V_{th}$ is 5~6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.zed.d.

• 대한전자공학회논문지SD
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• 제38권7호
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• pp.473-478
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• 2001

강유전 물질인 Pb/sub 0.99/［(Zr/sub 0/6Sn/sub 0.4/)/0.9/Ti/sub 0.1/］0.98/Nb/sub 0.02/O₃(PNZST) 박막을 10 mole%의 과잉 PbO가 첨가된 타겟을 이용하여 La/sub 0.5/Sr/sub 0.5/CoO₃(LSCO)/Pt/Ti/SiO₂/Si 기판상에 RF 마그네트론 스퍼터링 방법으로 증착하였다. 증착된 박막에 대하여 온도와 시간을 다양하게 변화시키면서 급속 열처리(rapid thermal annealing) 한 후, 그 결정성과 전기적 특성을 조사하였다. 80 W의 RF 전력, 500 ℃의 기판온도에서 증착한 후, 급속 열처리된 박막이 페로브스카이트상으로 결정화되었으며, 650 ℃, 공기중에서 10초동안 급속 열처리된 박막이 가장 우수한 결정성을 나타내었다. 이러한 박막으로 제작된 PNZST 커패시터는 약 20 μC/㎠정도의 잔류 분극과 약 50 kV/cm 정도의 항전계를 나타내었으며, 2.2×10/sup 9/의 스위칭 후에도 잔류분극의 감소는 10 %미만이었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.1-1
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• 1994

;The electronic state calculations for various types of ceramic materials have beell performed by the use of $DV-X\;{\alpha}$ cluster method. The molecular orbital levels and wave functions for model clusters have been computed to study the electronic properties ami chemical bonding of the ceramics. For ${\beta}-sialon(Si_{6-z}Al_zO_zN_{8-z})$ which is a high temperature structural material based on ${\beta}-Si_3N_4$, we have made model cluster calculations to estimate the strength of chemical bonding between atoms by the Mulliken population analysis. It is found that the covalent bonding between Si and N atoms is very strong in pure ${\beta}-Si_3N_4$, but the covalency around solute atom is considerably weakened when Si atom is substituted by AI. This tendency is enhanced by an additional substitution of oxygen atom for N. The result calculated can well explain the experimental data of changes in mechanical properties such as the reductions of Young's modulus and Vickers hardness with increment of z-value in ${\beta}-sialon$. Various model clusters for transition metal oxides which show many interesting physical and chemical properties have also been calculated. High-valent perovskite-type iron oxides EMFe0_3E(M=Ca and Sr) possess very interesting magnetic and chemical properties. In these oxides, iron exists as $Fe^{4+}$ state, but the experimental measurement of Mossba~er effect suggests that disproportionation $2Fe^{4+}=Fe^{3+}+Fe^{5+}$ takes place for $CaFe0_3$ at low temperatures. The model cluster calculations for these compounds indicated the existence of considerably strong covalent bonding of Fe-O. The calculations of hyperfine interaction at iron neucleus show very good agreement with the experimental Mossbauer measurements. The result calculated also implies that the disproportionation reaction is strongly possible by assuming the quenching of breathing phonon mode at low temperatures.tures.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1083-1086
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• 2004

We applied the spray pyrolysis technique to prepare Mn-doped $BaMgAl_{10}O_{17}$ (BAM) particles with high photoluminescence, which could be used in the plasma display device as a green phosphor. Several preparation conditions were investigated in order to tail the vacuum ultraviolet (VUV) characteristics. Some portions of barium were replaced with strontium to improve the luminescent intensity of BAM:Mn particles under VUV excitation. The content of Mn and Sr was optimized to obtain high luminescent efficiency under VUV excitation. Finally, the optimized BAM:Mn green particles showed higher photoluminescence intensity than that of commercial $Zn_2SiO_4$ and comparable with commercial barium-aluminate phosphor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.623-626
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• 2004

[ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.144-150
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• 2008

Recently, there has been growing interest in low loss and low dielectric constant material for LTCC application, as the frequency range for electronic devices increases. This study was designed to evaluate the effect of cordierite filler for low dielectric constant LTCC material. From the previous experiments, two glass compositions of B-Si-Al-Zn-Ba-Ca-O and B-Si-Al-Sr-Ca-O system, were chosen. Each powder of two glass compositions was sintered respectively with commercial cordierite powder in temperature range from $800^{\circ}C\;to\;900^{\circ}C$. Crystalline cordierite and glass peaks were affected only with two factors of composition and sintering temperature among various factors. With the optimized condition of two cordierite/glass compositions, obtained dielectric constant was below 5.5 and quality factor was above 1,000. Closed pore of sintered body was controled by sintering temperature and sintering time. When cordierite/glass composite with ratio of 5.5:4.5 was sintered at $900^{\circ}C$, densification was sufficient with good dielectric characteristics of ${\epsilon}_r<5.1,\;Q{\ge}1,000$. Residual fine closed pores could be reduced with control of sintering temperature and time. 3 point bending strength and chemical durability were evaluated to obtain feasibility for substrate material.

• Geosciences Journal
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• 제23권1호
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• pp.1-20
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• 2019

We present data from the Mesozoic Keumkang, Palbong, and Baekhwa granites in Garorim Bay, in the southwestern part of the Gyeonggi massif, South Korea. Using major and trace element concentrations, Sr-Nd-Pb isotopic compositions, and sensitive high-resolution ion microprobe (SHRIMP) zircon U-Pb ages, we aim to constrain the petrogenesis of the granites and explain their origin within a broader regional geological context. SHRIMP U-Pb zircon ages of $232.8{\pm}3.2$, $175.9{\pm}1.2$, and $176.8{\pm}9.8$ Ma were obtained from the Keumkang, Palbong and Baekhwa granites, respectively. The Late Triassic Keumkang granites belong to the shoshonite series and show an overall enrichment in large ion lithophile elements (LILE), a depletion in high field strength elements (HFSE) relative to primitive mantle, compared with neighboring elements in the primitive mantle-normalized incompatible trace element diagram with notable high Ba and Sr contents, and negligible Eu anomalies. The Keumkang granites are typified by highly radiogenic Sr and unradiogenic Nd and Pb isotopic compositions: $(^{87}Sr/^{86}Sr)_i=0.70931-0.70959$, $(^{143}Nd/^{144}Nd)_i=0.511472-0.511484$ [$({\varepsilon}_{Nd})_i=-17.0$ to -16.7], and $(^{206}Pb/^{204}Pb)=17.26-17.27$. The Middle Jurassic Palbong and Baekhwa granites belong to the medium- to high-K calc-alkaline series, and show LILE enrichment and HFSE depletion similar to the Keumkang granites, but exhibit significant negative anomalies in Ba, Sr, and Eu. Furthermore, they have elevated Y and Yb contents at any given $SiO_2$ content compared with other Jurassic granitoids from the Gyeonggi massif. The Palbong and Baekhwa granites have slightly less radiogenic Sr and more radiogenic Nd and Pb isotopic compositions [$(^{87}Sr/^{86}Sr)_i=0.70396-0.70908$, $(^{143}Nd/^{144}Nd)_i=0.511622-0.511660$, $({\varepsilon}_{Nd})_i=-15.4$ to -14.7, $(^{206}Pb/^{204}Pb)=17.56-17.76$] relative to the Keumkang granites. The Keumkang granites are considered to have formed in a post-collisional environment following the Permo-Triassic Songrim orogeny that records continent-continent collision between the North and South China blocks, and may have formed by fractional crystallization of metasomatized lithospheric mantle-derived mafic melts. The Palbong and Baekhwa granites may have been produced from a gabbroic assemblage at pressures of less than ~15 kbar, associated with subduction of the paleo-Pacific (Izanagi) plate at the Eurasian continental margin. Elevated ${\varepsilon}_{Nd}(t)$ values in the granitoids from the southwestern part of the Gyeonggi massif relative to those of the central and northern parts, together with the comparatively shallow depth of origin, imply the presence of an exotic block in the Korean lithosphere.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.304-304
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• 2007

고주파 모률에서 사용되는 기판소재는 저유전율과 낮은 loss 특성을 요구함으로 지속적인 연구를 필요로 한다. 지금까지의 ceramic/glass composite 에서 주로 사용된 ceramic filler는 Al2O3로 낮은 유전률을 구현에 한계가 있었다. Cordierite는 낮은 유전율 (${\varepsilon}_r$ < 4)을 나타내는 filler로서 그 가능성이 높지만 아직까지 보고된 결과들이 미흡한 실정이다. 따라서 본 연구에서는 cordierite filler와 SiO2-B2O3-Al2O3-RO (R : Zn, Sr, Ba, Ca)계의 glass를 혼합하여 LTCC용 기판소재로서의 가능성을 확인하고자 저온 동시소성이 가능한 소결온도인 $850^{\circ}C{\sim}1.000^{\circ}C$ 사이에서 소재의 소결실험을 진행하였다. 소결온도에 따른 상변화, 유전특성을 확인한 결과 filler로 사용된 cordierite상만이 관찰 되었으며 소결조건에 따라 5.0~5.5의 낮은 유전율과 1.000~1,500의 Q를 나타내는 것을 확인 하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.