• 한국세라믹학회지
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• 제37권1호
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• pp.90-95
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• 2000

The ferrites, CuFe2O4 and SrFe12O129, were applied to decompose H2O for H2 generation. The ferrites prepared by the coprecipitation were reduced by CH4 gas to make the oxygen deficient ferrite. H2O was decomposed to form H2 by the oxygen deficient iron oxide, and the decomposition reactions were accelerated by the addition of divalent metals such as Cu and Sr in the ferrites. The spinel type CuFe2O4 containing a relatively large amount of divalent metals was more effective to H2 generation than magnetoplumbite type SrFe12O19 in H2O decomposition.

• 한국결정성장학회지
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• 제22권2호
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• pp.78-83
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• 2012

$La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_{3-{\delta}}$(LSMCu)에서 Sr 함량에 따른 구조적 변화와 전기전도도에 대해 연구, 고찰하였다. EDTA citric complexing process(ECCP)로 페로브스카이트 구조를 갖는 $La_{0.8}Sr_{0.2}MnO_3$(LSM)와 $La_{1-x}Sr_xMn_{0.8}Cu_{0.2}O_3$($0.1{\leq}x{\leq}0.4$)을 제조하였다. Sr 함량이 증가할수록 격자상수와 격자부피는 감소하는 경향을 나타내었으며, 이는 Sr 함량이 증가함에 따라 B-site에서 증가하는 $Mn^{4+}$ 이온과 $Cu^{3+}$ 이온의 영향인 것으로 판단하였다. $0.1{\leq}x{\leq}0.3$ 범위의 조성에서 Sr 함량이 증가할수록 $500{\sim}1000^{\circ}C$에서 측정된 전기전도도는 증가하였고, x = 0.3 조성에서는 $750^{\circ}C$와 $950^{\circ}C$에서 각각 172.6 S/cm와 177.7 S/cm (최고값)를 나타내었다. 반면, x = 0.4 조성에서는 전기전도도가 감소하였는데 이는 입계에 발생한 산화물에 의한 영향으로 판단하였다. Sr 함량이 증가함에 따라 B-site에 존재하는 $Mn^{4+}$ 이온과 $Cu^{3+}$ 이온의 증가로 인해 격자수축이 발생하고, hopping mechanism에 관여하는 charge carrier들이 늘어나 전기전도도가 증가한 것으로 판단하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.69-70
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• 2002

Suspension effect has been studied by using superconductor of BiPbSrCaCuO ceramics containing $Ag_2O$. It has been cleared that $Ag_2O$ acts as pinning center which plays an important role to the suspension effect. Magnetic repulsive force which affects a superconductor located in magnetic flux from toroidal magnet has been investigated. It has been concluded that the suspension effect arises from the interaction between the pinning effect and the diamagnetic effect.

• E2M - 전기 전자와 첨단 소재
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• 제5권2호
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• pp.175-181
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• 1992

Y-Ba-Cu-O계 보다 화학적 내구성이 좋은 Bi-Sr-Ca-Cu-O계 초전도체 wire를 중합 binder와 초전도체 파우더를 혼합하여 sol-gel법으로 제조하였다. 여러가지 혼합비와 열처리 조건하에서 제조한 wire의 특성분석 결과 Bi$_{2}$Sr$_{2}$Ca$_{2}$Cu$_{3}$O계 초전도체와 binder의 최적 혼합율은 22.25%이었고 가열비는 0.33.deg.C/min로 500.deg.C까지는 Ar gas와 $O_{2}$ gas분위기로 열처리하고 500.deg.C에서 835.deg.C까지는 $O_{2}$ gas분위기에서 40h동안 열처리하였을때 임계온도 98K를 갖는 초전도 선재를 얻을 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• 대한전기학회논문지
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• 제43권5호
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• pp.795-801
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• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.142-142
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• 2011

Epitaxial $CuCrO_2$ thin films have been grown on single crystal substrate of c-plane $Al_2O_3$, $SrTiO_3$, YSZ and Quarts by laser ablation of a $CuCrO_2$ target using 266nm radiation from a Nd:YAG laser. X-ray measurements indicate that the $CuCrO_2$ grows epitaxially on all substrate, with its orientation dependent on the kinds of substrates. Most of the layer were polycrystalline with (001), (015) and random as the dominant surface orientation on c-plane YSZ, $SrTiO_3$ and quarts substrate, respectively. (001) orientated $CuCrO_2$ grows on C-plane $Al_2O_3$ and YSZ substrate, (015) orientated $CuCrO_2$ films are found on c-plane $SrTiO_3$ substrate and random orientated $CuCrO_2$ films grows on quarts substrate. These data are compared with the in-plane orientation and the mismatch of the $CuCrO_2$ and each substrate lattices in an attempt to relate the preferred orientation to the plane of the sapphire on which it is grown. Further characterization show that the grain size of the films increases for a substrate temperature increase, whereas the electrical properties of $CuCrO_2$ thin films depend upon their crystalline orientation.

• Progress in Superconductivity
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• 제3권2호
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• pp.140-145
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• 2002

An enhancement of the c-axis differential conductance around the zero-bias voltage near the superconducting transition temperature $T_{c}$ has been observed in $Au/Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ junctions. We attribute such an enhancement to the Andreev reflection (AR) between the surface Cu-O bilayer with suppressed superconductivity and the next superconducting Cu-O bilayer. The continuous evolution of the differential conductance, from gap like depression to an AR-like peak structure, around the zero-bias voltage points to weakening of the barrier strength of the nonsuperconducting layer between adjacent Cu-O bilayers as temperature approaches $T_{c}$ from below. The peak structure disappeared just below the bulk $T_{c}$ value of underdoped Bi2212 single crystals, whereas it survived up to ~1 K above $T_{c}$ in Junctions prepared on slightly overdosed crystals. According to a recently proposed theoretical consideration, a wider temperature range of the AR a bone $T_{c}$ is expected in the underdoped regime when phase-incoherent preformed pairs emerge in the pseudogap state. Our result is in contradiction to the preformed pair scenario. scenario.o.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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• pp.38-38
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• 2004

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1208-1211
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• 2003

High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.