• Journal of the Korean Magnetics Society
• /
• v.10 no.1
• /
• pp.16-21
• /
• 2000

Magnetic properties and crystallographic properties of $Cu_{0.95}Ge_{0.95}Fe_{0.1}O_3$ were studied by using x-ray diffraction, superconducting quantum interference device (SQUID) and Mossbauer spectroscopy. Our sample has orthorhombic structure and the lattice constants are a = 4.795 $\AA$, b = 8.472 $\AA$, c = 2.932 $\AA$. The spin-Peierls (SP) transition temperatures of our sample is 13 K. The Mossbauer spectra consisted with two Zeeman sextets and one doublet due to $Fe^{3+}$ions. The Zeeman sextets come from tetrahedral $Fe^{3+}$ions and the doublets come from octahedral $Fe^{3+}$ions. The jump up of magnetic hyperfine field of 2nd Zeeman sextet and the increasing of the values of quadrupole splitting and isomer shift of doublet below SP transition temperature could be interpreted related with the atomic displacements. The N el temperature is 715 K, the Debye temperature are 540 K for octahedral site and 380 K for tetrahedral site, respectively.

• Journal of Sensor Science and Technology
• /
• v.14 no.3
• /
• pp.160-168
• /
• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Applied Chemistry for Engineering
• /
• v.16 no.2
• /
• pp.187-193
• /
• 2005

The photocatalyst $TiO_2$ thin film was made from titanium (IV) isopropoxide, ethanol, and HCl by sol-gel method. The surface observation by SEM showed the sample that was coated 5 times at $500^{\circ}C$ had good properties. The component ratio, in atom% of O : Ti by EDX analysis, of 61 : 39 by spin coating was superior than dip coating. It was found that crystal structure changed from anatase phase to rutile phase as a function of the temperature of thin film fabrication, and this was measured by XRD. The photolysis efficiency of total organic compounds (TOC) by lighting UV beam on $TiO_2$ thin film showed 20%~65% within 1 h, and decreased slowly thereafter.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.230.2-230.2
• /
• 2015

Nanoparticles of magnesium ferrite are used as a heterogeneous catalyst, humidity sensor, oxygen sensor and cure of local hyperthermia. These applications usually utilize the magnetic behavior of these nanoparticles. Moreover, magnetic properties of nanoferrites exhibit rather complex behavior compared to bulk ferrite. The magnetic properties of ferrites are complicated by spins at vortices, surface spins. Reports till date indicate strong dependency on the structural parameters, oxidation state of metal ions and their presence in octahedral and tetrahedral environment. Thus we have carried out investigation on magnesium ferrite nanoparticles in order to study coordination, oxidation state and structural distortion. For present work, magnesium ferrite nanoparticles were synthesized using nitrates of metal ions and citric acid. Fe L-edge spectra measured for these nanoparticles shows attributes of $Fe^{3+}$ in high spin state. Moreover O K-edge spectra for these nanoparticles exhibit spectral features that arises due to unoccupied states of O 2p character hybridized with metal ions. Mg K-edge spectra shows spectral features at 1304, 1307, 1311 and 1324 eV for nanoparticles obtained after annealing at 400, 500, 600, 800, 1000, and $1200^{\circ}C$. Apart from this, spectra for precursor and nanoparticles obtained at $300^{\circ}C$ exhibit a broad peak centered around 1305 eV. A shoulde rlike structure is present at 1301 eV in spectra for precursor. This feature does not appear after annealing. After annealing a small kink appear at ~1297 eV in Mg K-edge spectra for all nanoparticles. This indicates changes in local electronic structure during annealing of precursor. Observed behavior of change in local electronic structure will be discussed on the basis of existing theories.

• Investigative Magnetic Resonance Imaging
• /
• v.4 no.1
• /
• pp.27-33
• /
• 2000

Purpose: To determine the electronic spin relaxation times, $T_{le}$, of three commercially available Gd-chelated MR contrast agents, Gd-DTPA, Gd-DTPA-BMA and Gd-DOTA, using Electron Paramagnetic Resonance(EPR) technique. Material and Methods: The paramagnetic MR contrast agents, Gd-DTFA(Magnevist) , Gd-DTFA-BMA(OMNISCAN) and Gd-DOTA(Dotarem), were used for this study, The EPR spectra of these contrast agents, which were prepared 2:1 methanol/water solution, were obtained at low temperatures, from $-160^{\circ}C~20^{\circ}C$. The glassy-state EPR spectra for these contrast agents were then fitted by the simulation spectra generated with different zero-field splitting (ZFS) parameters by a computer simulation program 'GEN', which generates the EPR powder spectrum using a given ZFS in $3{\times}3$ tensor. Finally, the spin relaxation times of the contrast agents were then determined from the $T_{2e}$, D, and E values of the best simulation spectra using the McLachlan's theory of average relaxation rate. Results: The electronic transverse spin relaxation times, $T_{2e}'s$, of Gd-DTPA, Gd-DTPA-BMA and Gd-DOTA were 0.113ns, 0.147ns and 1.81ns respectively. The g-values were 1.9737, 1.9735 and 1.9830 and the electronic spin relaxation times, $T_{1e}'s$, were 18.70ns, 33.40ns and $1.66{\mu}s$, respectively. Conclusion: The results of these studies reconfirm that the paramagnetic MR contrast agents with larger ZFS parameters should have shorter $T_{1e}'s$. Among three contrast agents used for this study, Gd-DOTA chelated with cyclic ligand structure shows better electronic property then the others with linear structure. Thus, it is concluded that the exact determination of ZFS parameters is the important factor in evaluating relaxation enhancement effect of the agents and in developing new contrast agents.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.11 no.2
• /
• pp.49-55
• /
• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.

• Journal of the Korean Magnetics Society
• /
• v.22 no.5
• /
• pp.173-177
• /
• 2012

The multilayer structure of glass/Ta(5.8 nm)/NiFe(5 nm)/Cu(t nm)/NiFe(3 nm)/FeMn(12 nm)/Ta(5.8 nm) as typical GMR-SV (giant magnetoresistance-spin valve) films is prepared by ion beam sputtering deposition (IBD). The coercivity and magnetoresiatance ratio are increased and decreased for the decrease of Cu thickness when the thickness of nonmagnetic Cu layer from is varied 2.2 nm to 3.0 nm. It means that the decrease of non-magntic layer is effected to the interlayer exchange coupling of pinned layer and the spin configuration array of free layer. For experiment of detecting and dropping of magnetic beads we used the GMR-SV sensor with glass/Ta/NiFe/Cu/NiFe/FeMn/Ta structure. From the comparison of before and after for the dropping status of magnetic bead, the variations of MR ratio, $H_{ex}$, and $H_c$ are showed 0.9 %, 3 Oe, and 2 Oe, respectively. The fabrication of GMR-SV sensor was included in the process of film deposition, photo-lithography, ion milling, and MR measurement. Further, GMR-SV device can be easily integrated so that detecting biosensor on a single chip becomes possible.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.7
• /
• pp.514-520
• /
• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.237-242
• /
• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• Journal of the Korean Ceramic Society
• /
• v.48 no.1
• /
• pp.86-93
• /
• 2011

Transparent plasma display can be realized by developing the synthetic chemistry of appropriate nanophosphors and generating nanophosphor-based transparent luminescent layers. For this goal, red-emitting $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphors were synthesized by a facile hydrothermal route at $200^{\circ}C$ for 48 h and the resulting nanophosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and emission property of the as-synthesized and annealed nanophosphors were compared. Choosing 2-methoxyethanol as a dispersion medium and applying a standard sonication, well-dispersed nanophosphor solutions could be prepared. Using these dispersions, visible transparent nanophosphor layers were spin-deposited on glass substrates. By combining $Y(V_{0.5},\;P_{0.5})O_4$:Eu nanophosphor layer/glass substrate as a rear plate with a front plate used in a conventional plasma display panels (PDPs), mini-sized transparent red-emitting PDPs were constructed. Transmittance and luminance properties of two transparent test panels using as-synthesized versus $800^{\circ}C$-annealed nanophosphors were characterized and compared.