• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.117-123
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• 1992

$Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.313-313
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• 2012

ZnO and $SnO_2$, well-known wide direct band-gap semiconductors, have been considered as the most promising functional materials due to their highly sensitive gas sensing and excellent optical properties. ZnO/$SnO_2$ epitaxial hetrostructure exhibited unique luminescence properties in contrast with individual tetra-pod ZnO and $SnO_2$ nanostructures. Polycrystalline $SnO_2$-based samples $Zn_xSn_{1-x}O_2$(x=0, 0.01, 0.03, 0.05) were prepared by solid state reaction and eco-friendly hydrothermal techniques. Scanning electron microscopy equipped with electron dispersive x-ray spectra confirms the formation of near stoichiometric $Zn_xSn_{1-x}O_2$ nanorods of diameter ~10 nm. X-ray diffraction analysis revealed the rutile structure, except for x=0.07, which may have a small part of $Zn_2SnO_4$ as a secondary phase.

• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.895-900
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• 1996

Ba(Ti1-xSnx)4O9 powder was synthesized by oxalate method. With the substitution of Sn into Ti site the sintered BaTiO4 crystal phase was stabilized due to the formation of solid solution. The optimal amounts of Sn solutbility for formation of BaTi4O9 crystalline phase was 0.16mole and of Sn was substituted and sintering was done at 135$0^{\circ}C$ for 30 minutes long rod type crystal was well developed and the highest Q value was obtained. But dielectric constant wasnearly constant without regarding to the Sn addition and the sintering time.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Journal of the Korean Chemical Society
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• v.41 no.4
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• pp.175-179
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• 1997

Luminescence of $Eu^{3+}$ has been studied in $Sr_{2-2x}Eu_xK_xSnO_4$ with two-dimensional $K_2NiF_4$ structure. The $^5D_o$ → $^7F_o$$Eu^{3+}$ ion represents the J=0 → J=0 transition which is forbidden by a Judd-Ofelt selection rule for electric dipole transition in 4f shell of $Eu^{3+}$ ions. However, the emission line of $^5D_o$ → $^7F_o$$Eu^{3+}$ emission spectra of Sr2-2xEuxKxSnO4$Sr_{2-2x}Eu_xK_xSnO_4$structure around $Eu^{3+}$ ions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.5-8
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• 1995

The crystal structure and dielectric propoerties of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ Ceramics were investigated. Sn substitution reduced the volitility of PbO due to the decrease of the unit cell. The crystal structure of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$ Ceramics was refined based on Orthorhombic Cmmm space group, More than two types of phase transition were observed, These phase transitons make the posicitve and negative temperature coefficient of dielectric constant of $(Pb_{1-x}Ca_x)(Zr_{1-y}Sn_y)O_3$.

• Journal of the Korean Magnetics Society
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• v.25 no.5
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• pp.156-161
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• 2015

The electronic structures of the potential candidate semiconductor nanoparticles for dye-sensitized solar cell (DSSC), such as $ZnSnO_3$ and $Zn_2SnO_4$, have been investigated by employing X-ray photoemission spectroscopy (XPS). The measured X-ray diffraction patterns show that $ZnSnO_3$ and $Zn_2SnO_4$ samples have the single-phase ilmenite-type structure and the inverse spinel structure, respectively. The measured Zn 2p and Sn 3d core-level XPS spectra reveal that the valence states of Zn and Sn ions are divalent (Zn 2+) and tetravalent (Sn 4+), respectively, in both $ZnSnO_3$ and $Zn_2SnO_4$. On the other hand, the shallow core-level measurements show that the binding energies of Sn 4d and Zn 3d core levels in $ZnSnO_3$ are lower than those in $Zn_2SnO_4$. This work provides the information on the valence states of Zn and Sn ions and their chemical bonding in $ZnSnO_3$ and $Zn_2SnO_4$.

• Journal of Hydrogen and New Energy
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• v.17 no.1
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• pp.69-74
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• 2006

Thick film $H_2$ sensors were fabricated using $SnO_2$ loaded with $Ag_2O$ and $PtO_x$. The composition that gave the highest sensitivity for $H_2$ was in the weight% ratio of $SnO_2 : PtO_x : Ag_2O$ as 93 : 1 : 6. The nano-crystalline powders of $SnO_2$ synthesized by sol-gel method were screen printed with $Ag_2O$ and $PtO_x$ on alumina substrates. The fabricated sensors were tested against gases like $H_2$, $CH_4$, $C_3H_8$, $C_2H_5OH$ and $SO_2$. The composite material was found sensitive against $H_2$ at the working temperature $130^{\circ}C$, with minor interference of other gases. The $H_2$ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on $SnO_2-Ag_2O-PtO_x$ system exhibited the high performance, high selectivity and very short response time to $H_2$ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of $H_2$.

• Progress in Superconductivity and Cryogenics
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• v.16 no.2
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• pp.33-35
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• 2014

We report here results of a study of superconductivity in the ($Ta_{1-x} Sn_x)Sr_2EuCu_2O_z$ system. We observe resistive superconducting transitions for the samples with x = 0.15-0.3, and the highest superconducting transition has been achieved for the sample with x = 0.2 which reveals onset $T_c$ of 43 K and zero-resistivity of 25 K. Thermoelectric power measurements indicate that Sn doping introduces holes into the system and thereby superconductivity can be achieved in the ($Ta_{1-x} Sn_x)Sr_2EuCu_2O_z$ system.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.100.1-100
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• 2003