• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.81-85
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• 2004

High T$\_$c/ (Sm/Y)$\_$1.8/Ba$\_$2.4/Cu$\_$3.4/O$\_$7-$\delta$/ ［(Sm/Y)］ superconductor, a combination of Y and Sm(50% each), was systematically investigated by the zone melt growth process. A sample prepared by this method showed well-textured microstructure, and (Sm/Y)$_2$BaCuO$\_$5/［(Sm/Y)211］inclusions were uniformly dispersed in large (Sm/Y)Ba$_2$Cu$_3$O$\_$y/ ［(Sm/Y)123］matrix. The sample showed a sharp superconducting transition at 91 K. The magnetization measurements of the (Sm/Y)1.8 sample exhibited the enhanced flux pinning, compared with Y$\_$1.8/Ba$\_$2.4/Cu$\_$3.4/O$\_$7-$\delta$/(Y1.8) sample without Sm. Critical current densities of (Sm/Y) 1.8 sample was 3.5${\times}$10$^4$A/$\textrm{cm}^2$ at 1 T and 77 K.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.75-75
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• 2002

• Progress in Superconductivity
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• v.7 no.1
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• pp.77-82
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• 2005

We report a successful fabrication of high-quality $SmBa_{2}Cu_{3}O_{7-{\delta}}$ (SmBCO) thin films on $LaAlO_3$(LAO)(100) single crystalline substrates by a modified TFA-MOD method. After the pyrolysis heat treatment of spin-coated films up to $400^{\circ}C$, SmBCO films were fired at various temperatures ranging from 810 to $850^{\circ}C$ in a reduced oxygen atmosphere (10 ppm $O_2$ in Ar). Optimally processed SmBCO films exhibited the zero-resistance temperature ($T_{c,zero}$) of 90.2 K and the critical current density ($J_c$) of $0.8\;MA/cm^2$ at 77K in self-field. Compared with the $J_c$ values (normally, > $2\;MA/cm^2$ at 77 K) of MOD-TFA processed YBCO films, rather depressed $J_c$ values in SmBCO films are most probably attributed to the existence of ${\alpha}$-axis oriented grains.

• Progress in Superconductivity
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• v.10 no.2
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• pp.92-98
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• 2009

The magnetic field profiles near the surface of a $Sm_1Ba_2Cu_3O_{7-\delta}$ coated conductor(CC-tape) under magnetic field and current that were applied simultaneously with phase differences ${\phi}s$ were measured using scanning Hall probe method. Measurements were carried out along the elliptic load lines with $\phi=90^{\circ}\;and\;45^{\circ}$ for some $B_{peak},\;I_{peak}$ values. From the measured field profiles, sheet current density J(x, $B_a,\;I_a$) and magnetic flux density $B_0(x,\;B_a,\;I_a)$ profiles in the CC-tape were calculated. Using these J(x, $B_a,\;I_a$) and $B_0(x,\;B_a,\;I_a)$ profiles, we estimated the hysteresis energy loss Q in the CC-tape. The estimated Qs, together with our previous results for $\phi=0^{\circ}$ from [9], were compared with theoretical values based on Brandt's calculation.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.79-79
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• 2004

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.62-62
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.107.1-107.1
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• 2008

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.